초록 ▼

Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condense

Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

대표청구항 ▼

1. A method comprising: introducing process gases comprising a silicon-containing precursor, an oxidant and a catalyst compound to a reaction chamber; andexposing a substrate in the reaction chamber to the process gases under conditions such that a condensed flowable film forms and at least partiall

1. A method comprising: introducing process gases comprising a silicon-containing precursor, an oxidant and a catalyst compound to a reaction chamber; andexposing a substrate in the reaction chamber to the process gases under conditions such that a condensed flowable film forms and at least partially fills a gap on the substrate, wherein the catalyst compound is selected from a silicon-containing compound, NH4OH, NH4OAc, (CH3)4NOH, (CH3)4NOAc, PH3, PH4+, chlorine gas, a bromine-containing compound, and a fluorine-containing compound. 2. The method of claim 1 wherein the process gases further comprise an alcohol. 3. The method of claim 1 wherein the catalyst compound is a silicon-containing compound. 4. The method of claim 1 wherein the silicon-containing precursor and the oxidant are introduced to the reaction chamber via separate inlets. 5. The method of claim 1 wherein the catalyst compound is pre-mixed with or incorporated into at least one of a silicon-containing precursor flow and an oxidant flow. 6. The method of claim 1 wherein the catalyst compound is introduced to the reaction chamber separate from the silicon-containing precursor and oxidant. 7. The method of claim 1 wherein the catalyst compound is selected from (CH3O)3SiX, (CH3CH2O)3SiX, (CH3O)2Si(H)X, (CH3CH2O)2Si(H)X and (CH3)3SiN(H)Si(CH3)3, HSiX3 or SiX4 wherein X is a halogen. 8. The method of claim 1 wherein the catalyst compound and silicon-containing precursor are introduced to the reaction chamber in a flow comprising a silicon-containing precursor having between about 0.01-2% halogen impurity. 9. A method of claim 1, wherein the oxidant is selected from water (steam), ozone and a peroxide. 10. The method of claim 1 wherein the catalyst compound is R3SiX where the R groups are independently selected from H, C1-C5 alkyl or alkoxy and X is a halogen, amine, or phosphine. 11. A method comprising: introducing process gases comprising a silicon-containing precursor, an oxidant, a catalyst compound and an alcohol to a reaction chamber, wherein the catalyst compound is premixed with or incorporated into a silicon-containing precursor flow; andexposing a substrate in the reaction chamber to the process gases under conditions such that a condensed flowable film forms on the substrate surface. 12. A method comprising: introducing process gases comprising a silicon-containing precursor, an oxidant, a catalyst compound and an alcohol to a reaction chamber, wherein the catalyst compound is premixed with or incorporated into an oxidant flow; andexposing a substrate in the reaction chamber to the process gases under conditions such that a condensed flowable film forms on the substrate surface.