초록 ▼

Methods for forming cobalt silicide materials are disclosed herein. In one example, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma

Methods for forming cobalt silicide materials are disclosed herein. In one example, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The exemplary method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the first cobalt silicide layer during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.

대표청구항 ▼

1. A method for forming a cobalt silicide material on a substrate surface, comprising: exposing a substrate to either a wet etch solution or a pre-clean plasma during a first step of a pre-clean process, wherein the substrate comprises a silicon-containing material disposed thereon and patterned fea

1. A method for forming a cobalt silicide material on a substrate surface, comprising: exposing a substrate to either a wet etch solution or a pre-clean plasma during a first step of a pre-clean process, wherein the substrate comprises a silicon-containing material disposed thereon and patterned feature definitions formed within the silicon-containing material;exposing the substrate to a hydrogen plasma during a second step of the pre-clean process;depositing a cobalt metal layer on the silicon-containing material by a chemical vapor deposition process within a first processing chamber coupled with a processing system;heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, wherein a portion of the cobalt metal layer reacts with the silicon-containing material to form the first cobalt silicide layer containing a surface of unreacted cobalt metal thereon;removing the surface of unreacted cobalt metal from the first cobalt silicide layer during an etch process;depositing another metal layer on the substrate during a vapor deposition process within a second processing chamber coupled with the processing system, wherein the vapor deposition process is conducted after the etch process and prior to a second annealing process; andheating the substrate to form a second cobalt silicide layer comprising CoSi2 from the first cobalt silicide layer during the second annealing process, wherein the substrate is maintained under vacuum within the second processing chamber from the beginning of the vapor deposition process through the end of the second annealing process. 2. The method of claim 1, wherein the substrate is exposed to the wet etch solution during the first step of the pre-clean process, and the wet etch solution is a hydrofluoric acid solution. 3. The method of claim 1, wherein the substrate is exposed to the pre-clean plasma during the first step of the pre-clean process, and the pre-clean plasma is formed from a pre-clean gas comprising nitrogen trifluoride. 4. The method of claim 1, wherein the substrate is exposed to the pre-clean plasma during the first step of the pre-clean process, the pre-clean plasma is formed from a pre-clean gas comprising ammonia. 5. The method of claim 1, wherein the substrate is maintained under vacuum within the first processing chamber from the beginning of the chemical vapor deposition process and through the end of the first annealing process. 6. The method of claim 1, wherein the substrate is heated to a temperature within a range from about 400° C. to about 600° C. and for a time period within a range from about 60 seconds to about 120 seconds during the first annealing process. 7. The method of claim 1, wherein the substrate is heated to a temperature within a range from about 600° C. to about 900° C. and for a time period within a range from about 60 seconds to about 120 seconds during the second annealing process. 8. The method of claim 1, further comprising transferring the substrate to a wet etch chamber for the etch process, and removing the unreacted cobalt metal from the substrate by a wet etch process. 9. The method of claim 1, further comprising transferring the substrate to a plasma etch chamber for the etch process, and removing the unreacted cobalt metal from the substrate by a plasma etch process.