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In many applications, particularly in automotive applications, integrated circuits (IC) are designed to withstand large fly-back currents from inductive loads. As these ICs have become smaller, the switching transistors (which are coupled to the inductive loads) have remained relatively large so as

In many applications, particularly in automotive applications, integrated circuits (IC) are designed to withstand large fly-back currents from inductive loads. As these ICs have become smaller, the switching transistors (which are coupled to the inductive loads) have remained relatively large so as to withstand the fly-back currents. The size of these switching transistors has become a limiting factor in designing compact ICs. Here, an IC is provided with an adaptive clamp that allows for a significant reduction in the area of a switching transistor for an inductive load.

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1. An apparatus comprising: a first terminal;a second terminal;a first transistor having a first passive electrode, a second passive electrode, and a control electrode, wherein the first passive electrode of the first transistor is coupled to the second terminal;a first resistive element that is cou

1. An apparatus comprising: a first terminal;a second terminal;a first transistor having a first passive electrode, a second passive electrode, and a control electrode, wherein the first passive electrode of the first transistor is coupled to the second terminal;a first resistive element that is coupled to the second terminal;a first diode stack that is coupled to the first resistive element, wherein the first diode stack has a first breakdown voltage;a second diode stack that is coupled between the first diode stack and the control electrode of the first transistor, wherein the second diode stack has a second breakdown voltage;a second resistive element that is coupled between the first terminal and a node between the first and second diode stacks; anda second transistor having a first passive electrode, a second passive electrode, and a control electrode, wherein the first passive electrode of the second transistor is coupled to the node between the first and second diode stacks, and wherein the control electrode of the second transistor is coupled to the first terminal, and wherein the second passive electrode of the second transistor is coupled to the control electrode of the first transistor. 2. The apparatus of claim 1, wherein the first and second diode stacks further comprise a first and a second set of zener diodes, respectively. 3. The apparatus of claim 1, wherein the apparatus further comprises a diode that is coupled between the second resistive element and the first terminal. 4. The apparatus of claim 1, wherein the apparatus further comprises a diode that is coupled substantially in parallel to the second resistive element. 5. The apparatus of claim 1, wherein the apparatus further comprises: a buffer; anda third resistive element that is coupled between the buffer and the control electrode of the first transistor. 6. The apparatus of claim 1, wherein the first and second resistive elements further comprise a first resistor and a second resistor, respectively. 7. An apparatus comprising: a voltage supply;an inductor that is coupled to the voltage supply; andan integrated circuit (IC) having: a first terminal that is coupled to the inductor and the voltage supply;a second terminal that is coupled to the inductor;a first transistor having a first passive electrode, a second passive electrode, and a control electrode, wherein the first passive electrode of the first transistor is coupled to the second terminal, and wherein the second passive electrode of the first transistor is coupled to ground;a first resistive element that is coupled to the second terminal;a first diode stack that is coupled to the first resistive element, wherein the first diode stack has a first breakdown voltage;a second diode stack that is coupled between the first diode stack and the control electrode of the first transistor, wherein the second diode stack has a second breakdown voltage;a second resistive element that is coupled between the first terminal and a node between the first and second diode stacks; anda second transistor having a first passive electrode, a second passive electrode, and a control electrode, wherein the first passive electrode of the second transistor is coupled to the node between the first and second diode stacks, and wherein the control electrode of the second transistor is coupled to the first terminal, and wherein the second passive electrode of the second transistor is coupled to the control electrode of the first transistor. 8. The apparatus of claim 7, wherein the first and second diode stacks further comprise a first and a second set of zener diodes, respectively. 9. The apparatus of claim 7, wherein the apparatus further comprises a diode that is coupled between the second resistive element and the first terminal. 10. The apparatus of claim 7, wherein the apparatus further comprises a diode that is coupled substantially in parallel to the second resistive element. 11. The apparatus of claim 7, wherein the apparatus further comprises: a buffer; anda third resistive element that is coupled between the buffer and the control electrode of the first transistor. 12. The apparatus of claim 7, wherein the first and second resistive elements further comprise a first resistor and a second resistor, respectively. 13. An apparatus comprising: a first terminal;a second terminal;an NMOS transistor that is coupled to the second terminal at its drain and that is coupled to ground at its source;a first resistor that is coupled to the second terminal;a first stack of zener diodes that is coupled to the first resistor, wherein the first diode stack has a first breakdown voltage;a second stack of zener diodes that is coupled between the first stack and the gate of the NMOS transistor, wherein the second stack has a second breakdown voltage;a second resistor that is coupled between the first terminal and a node between the first and second stacks; anda PMOS transistor that is coupled to the node between the first and second stacks at its source, that is coupled to the second terminal at its gate, and that is coupled to the gate of the NMOS transistor at its drain. 14. The apparatus of claim 13, wherein the first breakdown voltage is about 20V. 15. The apparatus of claim 13, where the second breakdown voltage is about 25V. 16. The apparatus of claim 13, wherein the apparatus further comprises a reverse biased diode that is coupled between the second resistive element and the first terminal. 17. The apparatus of claim 16, wherein the apparatus further comprises a forward biased diode that is coupled substantially in parallel to the second resistive element. 18. The apparatus of claim 13, wherein the apparatus further comprises: a buffer; anda third resistor that is coupled between the buffer and the gate of the NMOS transistor. 19. The apparatus of claim 13, wherein the first resistor is about 6 kΩ. 20. The apparatus of claim 13, wherein the second resistor is about 200 kΩ.