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To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semicon

To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOL substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.

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1. A method of manufacturing an SOI substrate, comprising the steps of: forming an ion-introduced layer by irradiating a semiconductor substrate with ions generated from a halogen gas as a source gas and then irradiating the semiconductor substrate with hydrogen molecular ions generated from a hydro

1. A method of manufacturing an SOI substrate, comprising the steps of: forming an ion-introduced layer by irradiating a semiconductor substrate with ions generated from a halogen gas as a source gas and then irradiating the semiconductor substrate with hydrogen molecular ions generated from a hydrogen gas as a source gas, in the semiconductor substrate;forming a silicon oxide film on the semiconductor substrate by chemical vapor deposition using organic silane as a silicon source gas;bonding the semiconductor substrate to a base substrate with the silicon oxide film interposed therebetween;heating the semiconductor substrate to separate a part of the semiconductor substrate at the ion-introduced layer, thereby, forming a semiconductor layer on the base substrate; andirradiating the semiconductor layer with a laser beam so that the semiconductor layer is melted at least partly. 2. The method of manufacturing an SOI substrate according to claim 1, further comprising a step of forming an insulating layer on the semiconductor substrate before forming the ion-introduced layer. 3. The method of manufacturing an SOI substrate according to claim 2, wherein the insulating layer is a single-layer film including at least one of a silicon nitride film and a silicon nitride oxide film or a multi-layer film formed by stacking two or more films. 4. The method of manufacturing an SOI substrate according to claim 1, wherein the ion-introduced layer is formed by exciting a source gas containing one or more gasses selected from the group consisting of a hydrogen gas, a noble gas, a halogen gas, and a halogen compound gas to generate ions and irradiating the semiconductor substrate with the ions. 5. The method of manufacturing an SOI substrate according to claim 1, wherein the ion-introduced layer is formed in the semiconductor substrate before forming the silicon oxide film. 6. The method of manufacturing an SOI substrate according to claim 1, wherein a heating temperature for forming the silicon oxide film is less than or equal to 350° C. and a heating temperature for separating the part of the semiconductor substrate is more than or equal to 400° C. 7. The method of manufacturing an SOI substrate according to claim 1, wherein a heating temperature for forming the silicon oxide film is a temperature at which ions that have been introduced to the ion-introduced layer do not escape, and a heating temperature for separating the part of the semiconductor substrate is a temperature at which the ions that have been introduced to the ion-introduced layer escape. 8. The method of manufacturing an SOI substrate according to claim 4, wherein the ion-introduced layer is formed by mass-separating the ions generated from the source gas and irradiating the semiconductor substrate with mass-separated ions. 9. The method of manufacturing an SOI substrate according to claim 1, wherein the ion-introduced layer is formed by exciting a hydrogen gas or a PH3 gas to generate ions including H2+ ions and irradiating the semiconductor substrate with the ions. 10. The method of manufacturing an SOI substrate according to claim 9, wherein the ions further include H+ ions and H3+ ions, andwherein the percentage of H2+ in the total amount of H+, H2+, and H3+ is greater than or substantially equal to 56%. 11. A method of manufacturing an SOI substrate, comprising the steps of: forming an ion-introduced layer by irradiating a semiconductor substrate with ions generated from a halogen gas as a source gas and then irradiating the semiconductor substrate with hydrogen molecular ions generated from a hydrogen gas as a source gas, in the semiconductor substrate;forming a first bonding layer on the semiconductor substrate;forming a second bonding layer on a base substrate;bonding the semiconductor substrate to the base substrate with the first bonding layer and the second bonding layer interposed therebetween;heating the semiconductor substrate to separate a part of the semiconductor substrate at the ion-introduced layer, thereby, forming a semiconductor layer on the base substrate; andirradiating the semiconductor layer with a laser beam so that the semiconductor layer is melted at least partly,wherein at least one of the first bonding layer and the second bonding layer is a silicon oxide film formed by chemical vapor deposition using organic silane as a silicon source gas. 12. The method of manufacturing an SOI substrate according to claim 11, further comprising a step of forming an insulating layer on the base substrate. 13. The method of manufacturing an SOI substrate according to claim 12, wherein the insulating layer is a single-layer film including at least one of a silicon nitride film and a silicon nitride oxide film or a multi-layer film formed by stacking two or more films. 14. The method of manufacturing an SOI substrate according to claim 11, wherein the ion-introduced layer is formed by exciting a source gas containing one or more gasses selected from the group consisting of a hydrogen gas, a noble gas, a halogen gas, and a halogen compound gas to generate ions and irradiating the semiconductor substrate with the ions. 15. The method of manufacturing an SOI substrate according to claim 11, wherein the ion-introduced layer is formed in the semiconductor substrate before forming the first bonding layer. 16. The method of manufacturing an SOI substrate according to claim 14, wherein the ion-introduced layer is formed by mass-separating the ions generated from the source gas and irradiating the semiconductor substrate with mass-separated ions. 17. The method of manufacturing an SOI substrate according to claim 11, wherein the ion-introduced layer is formed by exciting a hydrogen gas or a PH3 gas to generate ions including H2+ ions and irradiating the semiconductor substrate with the ions. 18. The method of manufacturing an SOI substrate according to claim 17, wherein the ions further include H+ ions and H3+ ions, andwherein the percentage of H2+ in the total amount of H+, H2+, and H3+ is greater than or substantially equal to 56%.