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A chip assembly includes a semiconductor chip, a bump and an external circuit. The semiconductor chip includes a semiconductor substrate, a transistor in and on the semiconductor substrate, multiple dielectric layers over the semiconductor substrate, a metallization structure over the semiconductor

A chip assembly includes a semiconductor chip, a bump and an external circuit. The semiconductor chip includes a semiconductor substrate, a transistor in and on the semiconductor substrate, multiple dielectric layers over the semiconductor substrate, a metallization structure over the semiconductor substrate, wherein the metallization structure is connected to the transistor, and a passivation layer over the metallization structure, over the dielectric layers and over the transistor. The bump is connected to the metallization structure through an opening in the passivation layer, wherein the bump includes an adhesion/barrier layer and a gold layer over the adhesion/barrier layer. The external circuit can be connected to the bump using a tape carrier package (TCP), a chip-on-film (COF) package or a chip-on-glass (COG) assembly.

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1. A chip package comprising: a semiconductor chip comprising a silicon substrate, a transistor in or over said silicon substrate, a first dielectric layer over said silicon substrate, a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first

1. A chip package comprising: a semiconductor chip comprising a silicon substrate, a transistor in or over said silicon substrate, a first dielectric layer over said silicon substrate, a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer, a second dielectric layer between said first and second metal layers, a passivation layer over said metallization structure, over said first and second dielectric layers and over said transistor, wherein an opening in said passivation layer is over a contact point of a metal pad of said metallization structure, and said contact point is at a bottom of said opening, wherein said metal pad comprises a first copper layer having a thickness between 0.5 and 3 micrometers and a barrier metal layer at a bottom and a sidewall of said first copper layer, wherein said passivation layer comprises a nitride layer;a metal bump on said contact point, wherein said metal bump is connected to said contact point through said opening, wherein said metal bump comprises an aluminum-free adhesion layer on said contact point, a copper-containing seed layer on said aluminum-free adhesion layer, and a second copper layer with a thickness between 5 and 30 micrometers on said copper-containing seed layer, wherein said aluminum-free adhesion layer is at a bottom of said second copper layer, but not at a sidewall of said second copper layer;a flexible circuit film comprising a first polymer layer, a second polymer layer and a copper trace comprising a portion between said first and second polymer layers;a tin-alloy layer between said second copper layer and said copper trace, wherein said tin-alloy layer comprises gold, wherein said tin-alloy layer is vertically over said sidewall of said second copper layer; anda polymer between said semiconductor chip and said flexible circuit film, wherein said polymer contacts said semiconductor chip and said flexible circuit film and encloses said metal bump. 2. The chip package of claim 1, wherein said tin-alloy layer further comprises silver. 3. The chip package of claim 1, wherein said metal bump further comprises a nickel layer having a thickness between 0.1 and 5 micrometers between said second copper layer and said tin-alloy layer. 4. The chip package of claim 1, wherein said barrier metal comprises a tantalum-containing layer. 5. The chip package of claim 1, wherein said nitride layer has a thickness between 0.2 and 1.2 micrometers. 6. The chip package of claim 1, wherein said aluminum-free adhesion layer comprises a titanium-containing layer having a thickness between 0.02 and 0.5 micrometers. 7. The chip package of claim 1, wherein said aluminum-free adhesion layer comprises a tantalum-containing layer having a thickness between 0.02 and 0.5 micrometers. 8. The chip package of claim 1, wherein said metal bump further comprises a gold layer having a thickness between 0.2 and 6 micrometers between said second copper layer and said tin-alloy layer. 9. The chip package of claim 1, wherein said metal bump further comprises a nickel layer having a thickness between 0.1 and 5 micrometers between said second copper layer and said tin-alloy layer, and a gold layer having a thickness between 0.2 and 6 micrometers between said nickel layer and said tin-alloy layer. 10. A chip package comprising: a semiconductor chip comprising a silicon substrate, a transistor in or over said silicon substrate, a first dielectric layer over said silicon substrate, a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer, a second dielectric layer between said first and second metal layers, a separating layer over said metallization structure, over said first and second dielectric layers and over said transistor, wherein an opening in said separating layer is over a contact point of a third metal layer said metallization structure, and said contact point is at a bottom of said opening, wherein said third metal layer comprises a first copper layer;a metal bump on said contact point, wherein said metal bump is connected to said contact point through said opening, wherein said metal bump comprises an aluminum-free adhesion layer on said contact point, a copper-containing seed layer on said aluminum-free adhesion layer, and a second copper layer with a thickness between 5 and 30 micrometers on said copper-containing seed layer;a circuit component comprising a first polymer layer, a second polymer layer and a copper trace comprising a portion between said first and second polymer layers;a tin-alloy layer between said second copper layer and said copper trace, wherein said tin-alloy layer comprises silver and gold, wherein said second copper layer has a sidewall with a region not covered by said tin-alloy layer, wherein said tin-alloy layer is vertically over said sidewall of said second copper layer; anda polymer between said semiconductor chip and said circuit component, wherein said polymer contacts said semiconductor chip and said circuit component and encloses said metal bump. 11. The chip package of claim 10, wherein said metal bump further comprises a nickel layer having a thickness between 0.1 and 5 micrometers between said second copper layer and said tin-alloy layer. 12. The chip package of claim 10, wherein said third metal layer further comprises a tantalum-containing layer at a bottom and a sidewall of said first copper layer. 13. The chip package of claim 10, wherein said separating layer comprises a nitride layer having a thickness between 0.2 and 1.2 micrometers. 14. The chip package of claim 10, wherein said aluminum-free adhesion layer comprises a titanium-containing layer having a thickness between 0.02 and 0.5 micrometers. 15. The chip package of claim 10, wherein said aluminum-free adhesion layer comprises a tantalum-containing layer having a thickness between 0.02 and 0.5 micrometers. 16. The chip package of claim 10, wherein said metal bump further comprises a gold layer having a thickness between 0.2 and 6 micrometers between said second copper layer and said tin-alloy layer. 17. The chip package of claim 10, wherein said metal bump further comprises a nickel layer having a thickness between 0.1 and 5 micrometers between said second copper layer and said tin-alloy layer, and a gold layer having a thickness between 0.2 and 6 micrometers between said nickel layer and said tin-alloy layer.