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Provided is a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer;

Provided is a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a second electrode part on the second conductive semiconductor layer; an insulation layer on the second electrode part; and a first electrode part on the insulation layer, a portion of the first electrode part being electrically connected to the first conductive semiconductor layer.

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1. A semiconductor light emitting device, comprising: a first conductive semiconductor layer;an active layer on the first conductive semiconductor layer;a second conductive semiconductor layer on the active layer;a second electrode part on the second conductive semiconductor layer;an insulation laye

1. A semiconductor light emitting device, comprising: a first conductive semiconductor layer;an active layer on the first conductive semiconductor layer;a second conductive semiconductor layer on the active layer;a second electrode part on the second conductive semiconductor layer;an insulation layer on the second electrode part; anda first electrode part on the insulation layer, a portion of the first electrode part being electrically connected to the first conductive semiconductor layer,wherein the insulation layer is disposed between the first electrode part and the second electrode part,wherein the insulation layer includes a first hole and a via hole spaced apart from the first hole, andwherein a portion of the second electrode part is disposed in the first hole of the insulation layer. 2. The semiconductor light emitting device according to claim 1, wherein the first electrode part comprises: a first electrode comprising at least one form of a pattern;at least one first electrode pad connected the first electrode; anda connection electrode in at least one of the first electrode and the first electrode pad. 3. The semiconductor light emitting device according to claim 2, wherein the connection electrode is disposed in the via hole perpendicularly penetrating the insulation layer, the second conductive semiconductor layer, the active layer, and a portion of the first conductive semiconductor layer; andthe insulation layer is further disposed on a circumference of the connection electrode in the via hole. 4. The semiconductor light emitting device according to claim 2, wherein the first electrode comprises at least one of a line-shaped pattern, a curve-shaped pattern, a line and curve mixed pattern, a branch-shaped pattern branching one pattern into the plural number of patterns, a polygonal pattern, a striped pattern, a lattice pattern, a dot pattern, a diapered pattern, a parallelogram pattern, a mesh pattern, a streak pattern, a cross pattern, a radial pattern, and a combinational pattern thereof. 5. The semiconductor light emitting device according to claim 1, comprising: a transparent electrode layer between the second conductive semiconductor layer and the second electrode part,wherein the second electrode part is connected to at least one of the second conductive semiconductor layer and the transparent electrode layer. 6. The semiconductor light emitting device according to claim 1, wherein the second electrode part comprises: a second electrode comprising at least one form of a pattern; anda second electrode pad connected to the second electrode and disposed in the first hole of the insulation layer. 7. The semiconductor light emitting device according to claim 6, wherein the second electrode comprises at least one of a line-shaped pattern, a curve-shaped pattern, a line and curve mixed pattern, a branch-shaped pattern branching one pattern into the plural number of patterns, a polygonal pattern, a striped pattern, a lattice pattern, a dot pattern, a diapered pattern, a parallelogram pattern, a mesh pattern, a streak pattern, a cross pattern, a radial pattern, and a combinational pattern thereof. 8. The semiconductor light emitting device according to claim 1, wherein a first portion of the first electrode part on the insulation layer overlaps spatially a first portion of the second electrode part under the insulation layer and the second electrode part is disposed around the portion of the first electrode part. 9. A semiconductor light emitting device, comprising: a first conductive semiconductor layer;an active layer on the first conductive semiconductor layer;a second conductive semiconductor layer on the active layer;a second electrode part on the second conductive semiconductor layer;an insulation layer on the second electrode part;a transparent electrode layer disposed between the second electrode part and the second conductive semiconductor layer; anda first electrode part on the insulation layer, a portion of the first electrode part being electrically connected to the first conductive semiconductor layer through a via hole,wherein the transparent electrode layer includes a hole and the portion of the first electrode part is disposed in the hole. 10. The semiconductor light emitting device according to claim 9, wherein the first electrode part comprises: a first electrode comprising at least one form of a pattern;at least one first electrode pad connected to the first electrode; andat least one connection electrode in at least one of the first electrode and the first electrode pad, the connection electrode being electrically connected to the first conductive semiconductor layer. 11. The semiconductor light emitting device according to claim 9, wherein the insulation layer comprises a second pad hole exposing the second electrode pad which is disposed in the second pad hole. 12. The semiconductor light emitting device according to claim 9, wherein: at least one of the first electrode part and the second electrode part comprises at least one of a line-shaped pattern, a curve-shaped pattern, a line and curve mixed pattern, a branch-shaped pattern branching one pattern into the plural number of patterns, a polygonal pattern, a striped pattern, a lattice pattern, a dot pattern, a diapered pattern, a parallelogram pattern, a mesh pattern, a streak pattern, a cross pattern, a radial pattern, and a combinational pattern thereof; andthe first electrode part and the second electrode part are disposed crossing over each other at both sides of the insulation layer or partial patterns thereof overlap each other. 13. The semiconductor light emitting device according to claim 9, wherein the transparent electrode layer includes a transparent electrode layer or a reflective electrode layer. 14. A semiconductor light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;an insulation layer on the light emitting structure, the insulation layer including a plurality of holes;a second electrode between the insulation layer and the light emitting structure;a second pad connected to the second electrode, the second pad disposed in at least one of the holes of the insulation layer;a first electrode on the insulation layer; anda connection electrode connected between the first electrode and the first conductive semiconductor layer. 15. The semiconductor light emitting device according to claim 14, wherein the connection electrode includes a first portion in contact with the first conductive semiconductor layer and a second portion in contact with the first electrode, wherein the second portion of the connection electrode has a width smaller than that of the first portion of the connection electrode. 16. The semiconductor light emitting device according to claim 14, wherein a portion of the insulation layer is disposed between an inner portion of the light emitting structure and the connection electrode. 17. The semiconductor light emitting device according to claim 14, wherein the connection electrode is disposed on a center area of patterns of the second electrode. 18. The semiconductor light emitting device according to claim 14, wherein a first portion of the first electrode overlaps spatially a first portion of the second electrode. 19. The semiconductor light emitting device according to claim 18, wherein the first portion of the first electrode and the first portion of the second electrode include a loop shape or/and a line shape. 20. The semiconductor light emitting device according to claim 14, comprising a substrate under the light emitting structure, and a transparent electrode layer between the insulation layer and the light emitting structure.