One aspect of the invention provides a substrate position detecting method for charged particle beam photolithography apparatus in order to be able to measure accurately and simply a substrate position on a stage. The substrate position detecting method for charged particle beam photolithography app
One aspect of the invention provides a substrate position detecting method for charged particle beam photolithography apparatus in order to be able to measure accurately and simply a substrate position on a stage. The substrate position detecting method for charged particle beam photolithography apparatus includes placing a substrate on a stage that can be moved in an X-direction and a Y-direction; measuring a position in the X-direction of the stage while moving the stage in the X-direction, and illuminating obliquely an upper surface of the substrate with a laser beam to receive light reflected from the substrate with a position sensing device; computing a barycentric position of the reflected light when the stage is moved in the X-direction; measuring a position in the Y-direction of the stage while moving the stage in the Y-direction, and illuminating obliquely the upper surface of the substrate with the laser beam to receive light reflected from the substrate with the position sensing device; computing a barycentric position of the reflected light when the stage is moved in the Y-direction; and computing the positions of the substrate from the position measurement results of the stage and the computed barycentric position.
대표청구항▼
1. A substrate position detecting method for charged particle beam photolithography apparatus, the method comprising: placing a substrate on a stage configured to move horizontally in an X-direction and a Y-direction, the X-direction and Y-direction being orthogonal to each other;measuring a positio
1. A substrate position detecting method for charged particle beam photolithography apparatus, the method comprising: placing a substrate on a stage configured to move horizontally in an X-direction and a Y-direction, the X-direction and Y-direction being orthogonal to each other;measuring a position in the X-direction of the stage while moving the stage in the X-direction, and illuminating obliquely an upper surface of the substrate with a laser beam to receive light reflected from the substrate with a position sensing device (PSD);computing a barycentric position of the reflected light when the stage is moved in the X-direction;measuring a position in the Y-direction of the stage while moving the stage in the Y-direction, and illuminating obliquely the upper surface of the substrate with the laser beam to receive light reflected from the substrate with the position sensing device (PSD);computing a barycentric position of the reflected light when the stage is moved in the Y-direction; andcomputing the positions in the X-direction and Y-direction of the substrate from the position measurement results in the X-direction and Y-direction of the stage and the computed barycentric positions. 2. The method according to claim 1, wherein the positions in the X-direction and Y-direction of the substrate are computed from an integration value of a difference between a barycentric position of the reflected light and an average value of the barycentric positions, when the positions in the X-direction and Y-direction of the substrate are computed. 3. The method according to claim 1, wherein, two mark portions provided in a surface of the substrate is used, the two mark portions configured to extend in directions orthogonal to each other, the two mark portions differing from other portions in laser beam reflectance, one of the mark portions is illuminated with the laser beam when the stage is moved in the X-direction, andthe other of the mark portions is illuminated with the laser beam when the stage is moved in the Y-direction. 4. The method according to claim 1, wherein a laser measuring system measures the position in the X-direction of the stage and the position in the Y-direction. 5. The method according to claim 3, wherein a plurality of points of each of the two mark portions are illuminated with the laser beam, and average values of the positions in the X-direction and Y-direction of the substrate, obtained from the measurement of the plurality of points, thereby computing the positions in the X-direction and Y-direction of the substrate. 6. The method according to claim 3, wherein a plurality of points of each of the two mark portions are illuminated with the laser beam, and not only a parallel deviation amount of the substrate from a normal position but also a rotation deviation amount are computed from the measurement of the plurality of points. 7. The method according to claim 1, wherein the charged particle beam photolithography apparatus is an electron beam photolithography apparatus. 8. A charged particle beam photolithography apparatus comprising: a stage configured to place a substrate, the stage configured to move horizontally in an X-direction and a Y-direction, the X-direction and Y-direction being orthogonal to each other;a stage position measuring unit configured to measure positions in the X-direction and Y-direction of the stage;a beam irradiation unit configured to irradiate the substrate on the stage with a charged particle beam;a substrate position detecting unit including projection unit and a light receiving unit, a position sensing device (PSD) is used as the light receiving element, the projection unit configured to illuminate obliquely an upper surface of the substrate with a laser beam, the light receiving unit configured to receive light reflected from the substrate;a height position computing unit that computes a height position of the substrate from detection result of the substrate position detecting unit; andan XY-position computing unit configured to compute the positions in the X-direction and Y-direction of the substrate from position measurement result of the stage position measuring unit and detection result of the substrate position detecting unit. 9. The apparatus according to claim 8, wherein the XY-position computing unit has a function of computing integration value of a difference between a barycentric position of the reflected light and an average value of the barycentric positions. 10. The apparatus according to claim 8, wherein the XY-position computing unit has a function of computing an average value of the positions in the X-direction and Y-direction of the substrate, the positions in the X-direction and Y-direction of the substrate being obtained by measuring a plurality of points on the substrate. 11. The apparatus according to claim 8, wherein the XY-position computing unit has a function of computing not only a parallel deviation amount of the substrate from a normal position on the substrate but also a rotation deviation amount from measurement of a plurality of points on the substrate. 12. The apparatus according to claim 8, wherein the stage position measuring unit is a laser measuring system. 13. The apparatus according to claim 8, wherein the charged particle beam photolithography apparatus is an electron beam photolithography apparatus.
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이 특허에 인용된 특허 (4)
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