Device and method for preparing relief printing form
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G03F-007/00
G03C-001/00
출원번호
US-0401106
(2009-03-10)
등록번호
US-8241835
(2012-08-14)
발명자
/ 주소
Rudolph, Michael Lee
Perrotto, Joseph Anthony
Patel, Dhiren V.
McMillen, Robert A.
출원인 / 주소
E I du Pont de Nemours and Company
인용정보
피인용 횟수 :
3인용 특허 :
54
초록▼
A relief printing form is prepared from a photosensitive element in an environment having controlled oxygen concentration during exposure to actinic radiation. An in situ mask is formed on a photosensitive element, the element is exposed to actinic radiation through the in-situ mask in an environmen
A relief printing form is prepared from a photosensitive element in an environment having controlled oxygen concentration during exposure to actinic radiation. An in situ mask is formed on a photosensitive element, the element is exposed to actinic radiation through the in-situ mask in an environment having an inert gas and a concentration of oxygen between 190,000 and 100 ppm, and the exposed element is treated to form the relief printing form having a pattern of raised surface areas.
대표청구항▼
1. A method for preparing a relief printing form from a photosensitive element, comprising the steps of: (a) forming an in-situ mask adjacent to a photopolymerizable layer in the photosensitive element, wherein the photopolymerizable layer comprises a binder, an ethylenically unsaturated compound an
1. A method for preparing a relief printing form from a photosensitive element, comprising the steps of: (a) forming an in-situ mask adjacent to a photopolymerizable layer in the photosensitive element, wherein the photopolymerizable layer comprises a binder, an ethylenically unsaturated compound and a photoinitiator:(b) enclosing the photosensitive element in a closed exposure chamber;(c) controlling the oxygen concentration within the closed exposure chamber in a range between 190,000 ppm and 100 ppm; and(d) exposing the photosensitive element to actinic radiation through the in-situ mask. 2. The method of claim 1, wherein the controlling step is performed by introducing an inert gas, and: (i) reducing the oxygen concentration in the closed exposure chamber at a steady rate of reduction or at a variable rate of reduction, starting from oxygen concentration of 190,000 ppm, or(ii) maintaining the oxygen concentration between 190,000 ppm to about 100 ppm. 3. The method of claim 1 further comprising after step b), purging an internal environment of the closed exposure chamber of atmospheric air having an oxygen concentration of about 210,000 ppm with an inert gas until the internal environment has a concentration of oxygen less than or equal to 190,000 ppm. 4. The method of claim 3 wherein after purging, the exposing step begins and the controlling step continuously reduces the oxygen concentration. 5. The method of claim 1, wherein the exposure step begins when the concentration of oxygen is less than or equal to 190,000 ppm. 6. The method of claim 1 further comprising continuously reducing the concentration of oxygen during the exposure step. 7. The method of claim 6, wherein the exposure step is completed when the concentration of oxygen is less than or equal to 5000 ppm. 8. The method of claim 1 wherein the exposure step begins when the concentration of oxygen is between 20,000 ppm and 100 ppm. 9. The method of claim 1 wherein the exposing of the photosensitive element occurs for a time sufficient to photopolymerize portions of the photopolymerizable layer, and at least 30% of the exposure time is conducted at oxygen concentration less than about 20,000 ppm. 10. The method of claim 1, wherein the closed exposure chamber has an internal environment, and the exposing occurs in the internal environment having an average concentration of oxygen of less than or equal to 80,000 ppm. 11. The method of claim 1, wherein the closed exposure chamber has an internal environment, and the exposure step occurs in the internal environment having an average concentration of oxygen of less than or equal to 30,000 ppm. 12. The method of claim 1, further comprising treating the photosensitive element resulting from the exposing step to form a relief surface having a pattern of raised surface elements. 13. The method of claim 12, wherein the relief surface comprises a plurality of the raised surface elements, each raised surface element having an ink-carrying top surface area, a side-wall surface area, and a shoulder surface area, wherein the shoulder surface area transitions between the top surface area and the side-wall surface area, and each of the raised surface elements has a total printing area that is the sum of the top surface area and the shoulder surface area, wherein ink transferred to a substrate by each shoulder surface area contributes to less than or equal to 30% of the total printing area. 14. The method of claim 13 wherein the ink transferred to a substrate by each shoulder surface area contributes to less than or equal to 5% of the total printing area.
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