Method of manufacturing a semiconductor device having a gate electrode formed over a silicon oxide insulating layer
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/30
H01L-021/46
출원번호
US-0216755
(2008-07-10)
등록번호
US-8241997
(2012-08-14)
우선권정보
JP-10-174482 (1998-06-22)
발명자
/ 주소
Yamazaki, Shunpei
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
1인용 특허 :
186
초록▼
There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crysta
There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.
대표청구항▼
1. A method of manufacturing a semiconductor device, said method comprising the steps of: forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;adding hydrogen to the first single crystal semiconductor subs
1. A method of manufacturing a semiconductor device, said method comprising the steps of: forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;bonding the first single crystal semiconductor substrate to a second silicon substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second silicon substrate;separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a single crystal semiconductor film is formed over the second silicon substrate;forming a semiconductor island by patterning the single crystal semiconductor film;oxidizing a surface of the semiconductor island in an oxidizing atmosphere to form an insulating layer comprising silicon oxide on the semiconductor island;forming a gate electrode over the semiconductor island with the insulating layer interposed therebetween;forming side walls adjacent to side surfaces of the gate electrode wherein the semiconductor island extends beyond outer side edges of the side walls;forming a metal film on at least portions of the semiconductor island;heating the metal film to form first metal silicide layers in the portions of the semiconductor island; andforming an insulating film comprising silicon nitride at least over the gate electrode and the semiconductor island, the insulating film being in direct contact with the gate electrode. 2. The method according to claim 1 wherein the hydrogen is added at a dosage of 1×1016 to 1×1017 atoms/cm2. 3. The method according to claim 1 wherein the step of oxidizing a surface of the semiconductor island is performed at a temperature within a range of 1050 to 1150° C. 4. The method according to claim 1 wherein the step of forming the silicon oxide film on the first single crystal semiconductor substrate is performed by oxidation of a surface of the first single crystal semiconductor substrate. 5. A method of manufacturing a semiconductor device, said method comprising the steps of: forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon wherein a thickness of the silicon oxide film is 0.05 to 0.5 μm;adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;bonding the first single crystal semiconductor substrate to a second silicon substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second silicon substrate;separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a single crystal semiconductor film is formed over the second silicon substrate;forming a semiconductor island by patterning the single crystal semiconductor film without exposing a surface of the second silicon substrate under the silicon oxide film;oxidizing a surface of the semiconductor island in an oxidizing atmosphere containing a halogen element to form an insulating layer comprising silicon oxide on the semiconductor island;forming a gate electrode over the semiconductor island with the insulating layer interposed therebetween; andforming an insulating film comprising silicon nitride at least over the gate electrode and the semiconductor island, the insulating film being in direct contact with the gate electrode. 6. A method of manufacturing a semiconductor device, said method comprising the steps of: forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon wherein a thickness of the silicon oxide film is 0.05 to 0.5 μm;adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;bonding the first single crystal semiconductor substrate to a second silicon substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second silicon substrate;separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a single crystal semiconductor film is formed over the second silicon substrate;forming a semiconductor island by patterning the single crystal semiconductor film;oxidizing a surface of the semiconductor island in an oxidizing atmosphere containing a halogen element to form an insulating layer comprising silicon oxide on the semiconductor island;forming a gate electrode over the semiconductor island with the insulating layer interposed therebetween;forming a source region and a drain region in the semiconductor island; andperforming hydrogenation by a heat treatment on at least the semiconductor island. 7. The method according to claim 6 wherein the hydrogen is added at a dosage of 1×1016 to 1×1017 atoms/cm2. 8. The method according to claim 6 wherein the step of oxidizing a surface of the semiconductor island is performed at a temperature within a range of 1050 to 1150° C. 9. The method according to claim 6 wherein the step of forming the silicon oxide film on the first single crystal semiconductor substrate is performed by oxidation of a surface of the first single crystal semiconductor substrate. 10. A method of manufacturing a semiconductor device, said method comprising the steps of: forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;bonding the first single crystal semiconductor substrate to a second silicon substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second silicon substrate;separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a single crystal semiconductor film is formed over the second silicon substrate;forming a semiconductor island by patterning the single crystal semiconductor film without exposing a surface of the second silicon substrate under the silicon oxide film;heating the semiconductor island in an oxidizing atmosphere containing a halogen element to form an insulating layer comprising silicon oxide on the semiconductor island;forming a gate electrode over the semiconductor island with the insulating layer interposed therebetween;forming a source region and a drain region in the semiconductor island; andperforming hydrogenation by a heat treatment on at least the semiconductor island. 11. The method according to any one of claim 10 or 5 wherein the hydrogen is added at a dosage of 1×1016 to 1×1017 atoms/cm2. 12. The method according to claim 10 wherein the step of heating the semiconductor island is performed at a temperature within a range of 1050 to 1150° C. 13. The method according to any one of claim 10 or 5 wherein the step of forming the silicon oxide film on the first single crystal semiconductor substrate is performed by oxidation of a surface of the first single crystal semiconductor substrate. 14. The method according to any one of claim 1, 6 or 5 wherein the step of oxidizing the surface of the semiconductor island is a thermal oxidation. 15. The method according to claim 5 wherein the step of oxidizing a surface of the semiconductor island is performed at a temperature within a range of 1050 to 1150° C. 16. A method of manufacturing a semiconductor device, said method comprising the steps of: providing a single crystal semiconductor film formed by: forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;bonding the first single crystal semiconductor substrate to a second silicon substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second silicon substrate; andseparating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a single crystal semiconductor film is formed over the second silicon substrate;forming a semiconductor island by patterning the single crystal semiconductor film;oxidizing a surface of the semiconductor island in an oxidizing atmosphere to form an insulating layer comprising silicon oxide on the semiconductor island;forming a gate electrode over the semiconductor island with the insulating layer interposed therebetween;forming side walls adjacent to side surfaces of the gate electrode wherein the semiconductor island extends beyond outer side edges of the side walls;forming a metal film on at least portions of the semiconductor island;heating the metal film to form first metal silicide layers in the portions of the semiconductor island; andforming an insulating film comprising silicon nitride at least over the gate electrode and the semiconductor island, the insulating film being in direct contact with the gate electrode. 17. The method according to claim 16 wherein the step of oxidizing a surface of the semiconductor island is performed at a temperature within a range of 1050 to 1150° C. 18. A method of manufacturing a semiconductor device, said method comprising the steps of: forming a semiconductor island by patterning a single crystal semiconductor film;oxidizing a surface of the semiconductor island in an oxidizing atmosphere to form an insulating layer comprising silicon oxide on the semiconductor island;forming a gate electrode over the semiconductor island with the insulating layer interposed therebetween;forming side walls adjacent to side surfaces of the gate electrode wherein the semiconductor island extends beyond outer side edges of the side walls;forming a metal film on at least portions of the semiconductor island;heating the metal film to form first metal silicide layers in the portions of the semiconductor island; andforming an insulating film comprising silicon nitride at least over the gate electrode and the semiconductor island, the insulating film being in direct contact with the gate electrode,wherein the single crystal semiconductor film has been prepared by forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon, adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate, bonding the first single crystal semiconductor substrate to a second silicon substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second silicon substrate, and separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that the single crystal semiconductor film is formed over the second silicon substrate. 19. The method according to claim 18 wherein the step of oxidizing a surface of the semiconductor island is performed at a temperature within a range of 1050 to 1150° C. 20. A method of manufacturing a semiconductor device, said method comprising the steps of: providing a single crystal semiconductor film formed by: forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon wherein a thickness of the silicon oxide film is 0.05 to 0.5 μm;adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;bonding the first single crystal semiconductor substrate to a second silicon substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second silicon substrate; andseparating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a single crystal semiconductor film is formed over the second silicon substrate;forming a semiconductor island by patterning the single crystal semiconductor film without exposing a surface of the second silicon substrate under the silicon oxide film;oxidizing a surface of the semiconductor island in an oxidizing atmosphere containing a halogen element to form an insulating layer comprising silicon oxide on the semiconductor island;forming a gate electrode over the semiconductor island with the insulating layer interposed therebetween; andforming an insulating film comprising silicon nitride at least over the gate electrode and the semiconductor island, the insulating film being in direct contact with the gate electrode. 21. The method according to claim 20 wherein the step of oxidizing a surface of the semiconductor island is performed at a temperature within a range of 1050 to 1150° C. 22. A method of manufacturing a semiconductor device, said method comprising the steps of: forming a semiconductor island by patterning a single crystal semiconductor film without exposing a surface of a second silicon substrate under a silicon oxide film;oxidizing a surface of the semiconductor island in an oxidizing atmosphere containing a halogen element to form an insulating layer comprising silicon oxide on the semiconductor island;forming a gate electrode over the semiconductor island with the insulating layer interposed therebetween; andforming an insulating film comprising silicon nitride at least over the gate electrode and the semiconductor island, the insulating film being in direct contact with the gate electrode,wherein the single crystal semiconductor film has been prepared by forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon wherein a thickness of the silicon oxide film is 0.05 to 0.5 μm, adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate, bonding the first single crystal semiconductor substrate to the second silicon substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second silicon substrate, and separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that the single crystal semiconductor film is formed over the second silicon substrate. 23. The method according to claim 22 wherein the step of oxidizing a surface of the semiconductor island is performed at a temperature within a range of 1050 to 1150° C.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (186)
Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Active matrix type display circuit and method of manufacturing the same.
Linn Jack H. (Melbourne FL) Lowry Robert K. (Melbourne Beach FL) Rouse George V. (Indiatlantic FL) Buller James F. (Austin TX), Bonded wafer processing with metal silicidation.
Linn Jack H. (Melbourne FL) Lowry Robert K. (Melbourne Beach FL) Rouse George V. (Indiatlantic FL) Buller James F. (Austin TX), Bonded wafer processing with metal silicidation.
Kazuaki Ohmi JP; Kiyofumi Sakaguchi JP; Kazutaka Yanagita JP, Composite member its separation method and preparation method of semiconductor substrate by utilization thereof.
Miyawaki Mamoru (Isehara JPX) Kondo Shigeki (Hiratsuka JPX) Nakamura Yoshio (Atsugi JPX) Kouchi Tetsunobu (Hiratsuka JPX), Image display device with a transistor on one side of insulating layer and liquid crystal on the other side.
Blanc Jean-Philippe (Gieres FRX) Bonaime Jolle (Echirolles FRX) De Poncharra Jean du P. (Quaix-en-Chartreuse FRX) Truche Robert (Gieres FRX), Integrated circuit in silicon on insulator technology comprising a field effect transistor.
Hongyong Zhang JP; Hideto Ohnuma JP; Yasuhiko Takemura JP, METHODOLOGY FOR PRODUCING THIN FILM SEMICONDUCTOR DEVICES BY CRYSTALLIZING AN AMORPHOUS FILM WITH CRYSTALLIZATION PROMOTING MATERIAL, PATTERNING THE CRYSTALLIZED FILM, AND THEN INCREASING THE CRYSTAL.
Miyazawa Yoshihiro (Kanagawa JPX) Minami Eric (Tokyo JPX) Matsushita Takeshi (Kanagawa JPX), MIS semiconductor device formed by utilizing SOI substrate having a semiconductor thin film formed on a substrate throug.
Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP, Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization.
Kim Hong-Gyu,KRX ; Han Kyung-Seob,KRX ; Lee Ho-Young,KRX, Method for fabricating liquid crystal display in which the pixel electrode has a particular connection to the drain el.
Kermani Ahmad (Fremont CA) Robertson Mike F. (San Jose CA) Ku Yen-Hui (Sunnyvale CA) Wong Fred (Fremont CA), Method for high temperature thermal processing with reduced convective heat loss.
Funai Takashi (Tenri JPX) Makita Naoki (Nara JPX) Yamamoto Yoshitaka (Yamatokoriyama JPX) Morita Tatsuo (Soraku-gun JPX), Method for producing crystalline semiconductor film having reduced concentration of catalyst elements for crystallizatio.
Hsu Ching-Hsiang (Hsin Chu TWX) Wong Shyh-Chyi (Taichang TWX) Liang Mong-Song (Hsinchu TWX) Chung Steve S. (Hsinchu TWX), Method of making a body contact for a MOSFET device fabricated in an SOI layer.
Verhaar Robertus D. J. (Eindhoven NLX), Method of manufacturing a device comprising MIS transistors having a gate electrode in the form of an inverted “T”.
Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX ; Teramoto Satoshi,JPX, Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bo.
Miyasaka, Mitsutoshi; Matsueda, Yojiro; Takenaka, Satoshi, Methodology for fabricating a thin film transistor, including an LDD region, from amorphous semiconductor film deposited at 530° C. or less using low pressure chemical vapor deposition.
Pinker Ronald D. (Peekskill NY) Arnold Emil (Chappaqua NY) Baumgart Helmut (Mahopac NY), Process for making strain-compensated bonded silicon-on-insulator material free of dislocations.
Yuzurihara Hiroshi (Isehara JPX) Miyawaki Mamoru (Tokyo JPX) Ishizaki Akira (Atsugi JPX) Momma Genzo (Hiratsuka JPX) Kochi Tetsunobu (Hiratsuka JPX), Process for manufacturing a semiconductor device by applying a non-single-crystalline material on a sidewall inside of a.
Yonehara Takao (Atsugi JPX) Yamagata Kenji (Kawasaki JPX), Process for preparing semiconductor substrate by bringing first and second substrates in contact.
Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Process for producing semiconductor substrate by heating to flatten an unpolished surface.
Sugahara Kazuyuki (Hyogo JPX) Nishimura Tadashi (Hyogo JPX) Kusunoki Shigeru (Hyogo JPX) Inoue Yasuo (Hyogo JPX), Process for producing single crystal semiconductor layer and semiconductor device produced by said process.
Nishida Shoji,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX ; Iwane Masaaki,JPX, Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor.
Field Leslie A. (San Francisco CA), Process for removing sulfur from a hydrocarbon feedstream using a sulfur sorbent with alkali metal components or alkalin.
Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Mitsuki Toru,JPX ; Ohtani Hisashi,JPX, Semiconductor device with rod like crystals and a recessed insulation layer.
Plus Dora (South Bound Brook NJ) Smeltzer Ronald K. (Princeton Township ; Mercer County NJ), Semiconductor device with source and drain depth extenders and a method of making the same.
Yonehara Takao,JPX ; Sato Nobuhiko,JPX ; Sakaguchi Kiyofumi,JPX ; Kondo Shigeki,JPX, Semiconductor member, and process for preparing same and semiconductor device formed by use of same.
Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
Zavracky Paul M. (Norwood MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert (Norwell MA) Jacobsen Jeffrey (Hollister CA) Dingle Brenda (Norton MA) Spitzer Mark B. (Sharon MA), Single crystal silicon arrayed devices for display panels.
Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Koyama Jun,JPX ; Fukunaga Takeshi,JPX, Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the sa.
Shunpei Yamazaki JP; Akiharu Miyanaga JP; Jun Koyama JP; Takeshi Fukunaga JP, Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same.
Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Koyama Jun,JPX ; Fukunaga Takeshi,JPX, Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same.
Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Koyama Jun,JPX ; Fukunaga Takeshi,JPX, Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.