IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
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출원번호 |
US-0072668
(2011-03-25)
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등록번호 |
US-8242460
(2012-08-14)
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발명자
/ 주소 |
- Yue, Hongyu
- Liu, Junjun
- Faguet, Jacques
- Toma, Dorel I.
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출원인 / 주소 |
|
인용정보 |
피인용 횟수 :
2 인용 특허 :
29 |
초록
▼
A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamb
A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamber and configured to support a substrate, and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation. The radiation source includes a UV source, wherein the UV source has a UV lamp, and a reflector for directing reflected UV radiation from the UV lamp to the substrate. The reflector has a dichroic reflector, and a non-absorbing reflector disposed between the UV lamp and the substrate, and configured to reflect UV radiation from the UV lamp towards the dichroic reflector, wherein the non-absorbing reflector substantially prevents direct UV radiation from the UV lamp to the substrate.
대표청구항
▼
1. A process module for treating a dielectric film on a substrate, comprising: a process chamber;a substrate holder coupled to said process chamber and configured to support a substrate; anda radiation source coupled to said process chamber and configured to expose said dielectric film to electromag
1. A process module for treating a dielectric film on a substrate, comprising: a process chamber;a substrate holder coupled to said process chamber and configured to support a substrate; anda radiation source coupled to said process chamber and configured to expose said dielectric film to electromagnetic (EM) radiation, wherein said radiation source comprises an ultraviolet (UV) source, said UV source comprising: a UV lamp, anda reflector for directing reflected UV radiation from said UV lamp to said substrate, said reflector having a dichroic reflector, and a non-absorbing reflector disposed between said UV lamp and said substrate and configured to reflect UV radiation from said UV lamp towards said dichroic reflector, wherein said non-absorbing reflector substantially prevents direct UV radiation from said UV lamp to said substrate. 2. The process module of claim 1, wherein said substrate is exposed to said reflected UV radiation comprising emission wavelengths ranging from about 200 nm (nanometers) to about 290 nm. 3. The process module of claim 1, wherein said non-absorbing reflector is separate from said UV lamp. 4. The process module of claim 1, wherein said non-absorbing reflector comprises a coating applied to an underside of said UV lamp. 5. The process module of claim 1, wherein said non-absorbing reflector comprises a concave reflecting surface oriented to face at least one concave reflecting surface of said dichroic reflector. 6. The process module of claim 5, wherein said non-absorbing reflector is positioned between said dichroic reflector and said substrate. 7. The process module of claim 5, wherein a first apex and a first focus of said concave reflecting surface of said non-absorbing reflector, and a second apex and a second focus of said concave reflecting surface of said dichroic reflector are collinear. 8. The process module of claim 1, wherein said dichroic reflector comprises a cylindrical or spherical geometry having a circular, an elliptical, a parabolic, or a hyperbolic cross-section. 9. The process module of claim 1, wherein said non-absorbing reflector comprises a cylindrical or spherical geometry having a circular, an elliptical, a parabolic, or a hyperbolic cross-section. 10. The process module of claim 1, wherein said dichroic reflector comprises a plurality of dichroic reflecting elements arranged in a first plane parallel with said substrate and located above said substrate, and wherein said non-absorbing reflector comprises a plurality of non-absorbing reflecting elements arranged in a second plane parallel with said substrate and located above said substrate and below said first plane. 11. The process module of claim 10, wherein said plurality of non-absorbing reflecting elements and said plurality of dichroic reflecting elements are arranged as pairs, wherein a one-to-one relationship exists between each of said non-absorbing reflecting elements and each of said dichroic reflecting elements. 12. The process module of claim 1, wherein said radiation source further comprises a UV window disposed between said reflector and said substrate. 13. The process module of claim 1, wherein said radiation source further comprises a UV window disposed between said reflector and said UV lamp. 14. The process module of claim 1, wherein said radiation source further comprises an infrared (IR) source. 15. The process module of claim 14, wherein said IR source provides substantially monochromatic electromagnetic (EM) radiation having a narrow band of wavelengths. 16. The process module of claim 14, wherein said IR source comprises an IR laser. 17. The process module of claim 1, further comprising: a temperature control system coupled to said substrate holder and configured to control a temperature of said substrate. 18. The process module of claim 1, further comprising: a drive system coupled to said substrate holder, and configured to translate, or rotate, or both translate and rotate said substrate holder. 19. The process module of claim 1, further comprising: a gas supply system coupled to said process chamber, and configured to introduce a process gas to said process chamber. 20. The process module of claim 19, wherein said gas supply system includes a nozzle configured to produce a gas or vapor jet emanating from said nozzle along a jet axis in a direction towards said substrate.
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