Additives to prevent degradation of cyclic alkene derivatives
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/316
H01L-021/473
C23C-016/44
C23C-016/40
C09K-015/08
C10L-001/183
출원번호
US-0179977
(2011-07-11)
등록번호
US-8252704
(2012-08-28)
발명자
/ 주소
Teff, Daniel J.
Chagolla, John L.
출원인 / 주소
Fujifilm Electronic Materials U.S.A., Inc.
대리인 / 주소
Fish & Richardson P.C.
인용정보
피인용 횟수 :
0인용 특허 :
50
초록
This disclosure relates to compositions that include (a) at least one substituted or unsubstituted cyclic alkene, and (b) an antioxidant composition including at least one compound of Formula (I): R1 through R4 in Formula (I) are described in the specification.
대표청구항▼
1. A process, comprising treating a substrate in a film deposition chamber with at least one cyclic alkene composition and at least one silicon containing compound in a chemical vapor deposition process to form a carbon doped silicon oxide film on the substrate, wherein the cyclic alkene composition
1. A process, comprising treating a substrate in a film deposition chamber with at least one cyclic alkene composition and at least one silicon containing compound in a chemical vapor deposition process to form a carbon doped silicon oxide film on the substrate, wherein the cyclic alkene composition comprises:(a) one or more substituted or unsubstituted cyclic alkenes, and(b) an antioxidant composition comprising at least one compound of Formula (I), wherein R1 through R4 each independently is H, C1-C8 linear alkyl, C2-C8 unsaturated alkyl, C3-C8 branched alkyl, C3-C8 cyclic alkyl, C1-C8 linear alkoxy, C2-C8 unsaturated alkoxy, C3-C8 branched alkoxy, C3-C8 cyclic alkoxy or substituted or unsubstituted aryl, and with the proviso that at least one of R1 through R4 is not H, and that, if one of R1 through R4 is t-butyl, at least one of the remaining R1 through R4 is not H. 2. The process of claim 1, further comprising, prior to the treatment step, providing the cyclic alkene composition in a first container, the silicon containing compound in a second container, a film deposition tool containing the film deposition chamber, a connector configured to connect the first and second containers to the film deposition chamber within the film deposition tool, and a stream of carrier gas to sweep the cyclic alkene composition and the silicon containing compound through the connector into the film deposition chamber. 3. The process of claim 2, further comprising, prior to the treatment step, introducing vapors of the cyclic alkene composition and the silicon containing compound into the carrier gas stream. 4. The process of claim 3, further comprising, prior to the treatment step, transporting the vapors of the cyclic alkene composition and silicon containing compound into the film deposition chamber via the carrier gas stream. 5. The process of claim 1, wherein one of R1 through R4 is methyl, ethyl, methoxy, or ethoxy. 6. The process of claim 5, wherein at least one of the remaining R1 through R4 is H. 7. The process of claim 6, wherein all of the remaining R1 through R4 are H. 8. The process of claim 1, wherein R2 or R3 is methyl or methoxy. 9. The process of claim 8, wherein at least one of the remaining R1 through R4 is H. 10. The process of claim 1, wherein the antioxidant composition comprises 4-methyl-1,2-dihydroxybenzene. 11. The process of claim 1, wherein the antioxidant composition comprises 3-methoxy-1,2-dihydroxybenzene. 12. The process of claim 1, wherein the antioxidant composition is present in a concentration between about 1 ppm and about 200 ppm. 13. The process of claim 1, wherein the antioxidant composition is present in a concentration between about 50 ppm and about 150 ppm. 14. The process of claim 1, wherein the cyclic alkene has the general formula C1H2n-2x-yRy, in which n is the number of carbons in the primary cyclic structure and is an integer from 4 to 18, x is the number of unsaturated sites in the primary cyclic structure and is an integer and 1≦x≦n/2, y is the number of substituents, R, on the primary cyclic structure and is an integer and 0≦y≦2n-2x, and each R independently is C1-C18 linear alkyl, C3-C18 branched alkyl, C2-C18 unsaturated alkyl, C3-C18 cyclic alkyl, C1-C18 linear alkoxy, C3-C18 branched alkoxy, C2-C18 unsaturated alkoxy, C3-C18 cyclic alkoxy, substituted or unsubstituted aryl, or substituted silicon containing substituent. 15. The process of claim 1, wherein the cyclic alkene has the general formula CnH2-(2x+2)-yRy, in which n is the number of carbons in the primary cyclic structure and is an integer from 5 to 18, x is the number of unsaturated sites in the primary cyclic structure and is an integer and x≦n/2, y is the number of substituents, R, on the primary cyclic structure and is an integer and 0≦y≦2n-(2x+2), and each R independently is C1-C18 linear alkyl, C3-C18 branched alkyl, C2-C18 unsaturated alkyl, C3-C18 cyclic alkyl, C1-C18 linear alkoxy, C3-C18 branched alkoxy, C2-C18 unsaturated alkoxy, C3-C18 cyclic alkoxy, substituted or unsubstituted aryl, or substituted silicon containing substituent. 16. The process of claim 1, wherein the cyclic alkene has the general formula CnH2n-(2x+4)-yRy, in which n is the number of carbons in the primary cyclic structure and is an integer from 7 to 18, x is the number of unsaturated sites in the primary cyclic structure and is an integer and x≦n/2, y is the number of substituents, R, on the primary cyclic structure and is an integer and 0≦y≦2n-(2x+4), each R independently is C1-C18 linear alkyl, C3-C18 branched alkyl, C2-C18 unsaturated alkyl, C3-C18 cyclic alkyl, C1-C18 linear alkoxy, C3-C18 branched alkoxy, C2-C18 unsaturated alkoxy, C3-C18 cyclic alkoxy, substituted or unsubstituted aryl, or substituted silicon containing substituent. 17. The process of claim 1, wherein the cyclic alkene is at least one compound selected from the group consisting of dipentene, phellandrene, dicyclopentadiene, alpha-terpinene, gamma-terpinene, limonene, alpha-pinene, 3-carene, terpinolene, norbornene, norbornadiene, 5-vinyl-2-norbornene, and 5-ethylidene-2-norbornene. 18. The process of claim 1, wherein at least one of R1 through R4 is not H, or if one of R1 through R4 is t-butyl, at least one of the remaining R1 through R4 is not H. 19. A process, comprising treating a substrate in a film deposition chamber with at least one cyclic alkene composition and at least one silicon containing compound in a chemical vapor deposition process to form a carbon doped silicon oxide film on the substrate, wherein the cyclic alkene composition comprises:(a) a cyclic alkene selected from the group consisting of dipentene, phellandrene, dicyclopentadiene, alpha-terpinene, gamma-terpinene, limonene, alpha-pinene, 3-carene, terpinolene, norbornene, norbornadiene, 5-vinyl-2-norbornene, and 5-ethylidene-2-norbornene, and(b) an antioxidant composition comprising 4-methyl-1,2-dihydroxybenzene or 3-methoxy-1,2-dihydroxybenzene. 20. A process, comprising: storing a cyclic alkene composition in a sealed container for at least 6 months, andafter storing the cyclic alkene composition, using the cyclic alkene composition together with at least one silicon-containing compound in a chemical vapor deposition process to form a carbon doped silicon oxide film on a substrate,wherein the cyclic alkene composition comprises:(a) at least one substituted or unsubstituted cyclic alkene, and(b) an antioxidant composition comprising at least one compound of Formula (I), wherein R1 through R4 each independently is H, C1-C8 linear alkyl, C2-C8 unsaturated alkyl, C3-C8 branched alkyl, C3-C8 cyclic alkyl, C1-C8 linear alkoxy, C2-C8 unsaturated alkoxy, C3-C8 branched alkoxy, C3-C8 cyclic alkoxy or substituted or unsubstituted aryl.
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