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Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strip

Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.

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1. A TFD device, comprising: a substrate;a plurality of parallel spaced electrically conductive strips upon the substrate, wherein a subset of the conductive strips containing multiple spaced conductive strips forms a gate;a channel disposed above the gate, wherein the channel is continuous and exte

1. A TFD device, comprising: a substrate;a plurality of parallel spaced electrically conductive strips upon the substrate, wherein a subset of the conductive strips containing multiple spaced conductive strips forms a gate;a channel disposed above the gate, wherein the channel is continuous and extends transversely across the conductive strips that form the gate; anda source electrode and a drain electrode aligned to the channel. 2. The TFD device of claim 1, further including cut-off vias adjacent to the channel, the cut-off vias severing the conductive strips that are adjacent to the channel and are not part of the gate. 3. The TFD device of claim 2, further including a conductive pad on and electrically connected to the conductive strips that form the gate, the conductive pad at least spanning the channel. 4. The TFD device of claim 3, wherein the cut-off vias and the conductive pad control which of the conductive strips are electrically connected to act as the gate to the channel. 5. The TFD device of claim 1, further including a conductive pad on and electrically connected to the conductive strips that form the gate, the conductive pad at least spanning the channel. 6. The TFD device of claim 1, wherein each conductive strip has a width at least equal to the spacing between the conductive strips. 7. The TFD device of claim 1, wherein the TFD device is flexible. 8. The TFD device of claim 1, wherein a plurality of the TFD devices are provided in an array as an active matrix backplane. 9. An active matrix TFD device comprising: a substrate;a plurality of parallel gate controls dispersed upon the substrate, each gate control provided by a plurality of parallel spaced electrically conductive strips;a plurality of channels, each of the channels being continuous, disposed upon a corresponding one of the gate controls, and extending transversely across multiple conductive strips of the gate control;a plurality of electrically isolated data lines, each data line electrically coupled to at least one channel; anda plurality of individually bounded electrodes, each coupled to a channel opposite from a data line. 10. The active matrix TFD device of claim 9, further including cut-off vias adjacent to the channels, wherein for each of the channels, the cut-off vias adjacent to that channel sever conductive strips that are adjacent to the channel and not used to gate the channel. 11. The active matrix TFD device of claim 10, wherein a conductor is not coupled to each channel above a gate. 12. The active matrix TFD device of claim 10, further including a plurality of conductive pads disposed upon the conductive strips, wherein each of the conductive pads is aligned to and spans a corresponding one of the channels. 13. The active matrix TFD device of claim 10, further comprising a plurality of conductive pads disposed upon the conductive strips, wherein each of the conductive pads is aligned to and spans a corresponding one of the channels. 14. The active matrix TFD device of claim 13, wherein the cut-off vias and the conductive pads control which of the conductive strips are electrically connected to respectively gate the channels. 15. The active matrix TFD device of claim 9, wherein for each channel, a data line provides a source and an electrode provides a drain. 16. The active matrix TFD device of claim 9, wherein each bounded electrode is a pixel electrode. 17. The active matrix TFD device of claim 9, wherein the active matrix is provided by a roll-to-roll process. 18. The active matrix TFD device of claim 9, wherein the active matrix comprises an active matrix backplane. 19. The active matrix TFD device of claim 9, wherein the active matrix array is flexible. 20. The active matrix TFD device of claim 9, wherein the conductive strips are substantially identical.