IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
US-0783011
(2007-04-05)
|
| 등록번호 |
US-8274766
(2012-09-25)
|
| 우선권정보 |
JP-P2006-125856 (2006-04-28) |
|
발명자
/ 주소 |
- Fukuzawa, Hideaki
- Fuji, Yoshihiko
- Yuasa, Hiromi
- Iwasaki, Hitoshi
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
|
| 인용정보 |
피인용 횟수 :
1 인용 특허 :
140 |
초록
▼
A magneto-resistive element includes: a first magnetic layer having a substantially fixed magnetization direction; a thin film layer disposed on the first magnetic layer and having at least one of oxide, nitride, oxynitride, and metal; and a second magnetic layer disposed on the thin film layer and
A magneto-resistive element includes: a first magnetic layer having a substantially fixed magnetization direction; a thin film layer disposed on the first magnetic layer and having at least one of oxide, nitride, oxynitride, and metal; and a second magnetic layer disposed on the thin film layer and having a substantially fixed magnetization direction.
대표청구항
▼
1. A magneto-resistive element, comprising: a first magnetic layer having a substantially fixed magnetization direction;a thin film layer disposed directly on said first magnetic layer, having a magnetization direction that changes depending on an external magnetic field, and comprising 50 atomic %
1. A magneto-resistive element, comprising: a first magnetic layer having a substantially fixed magnetization direction;a thin film layer disposed directly on said first magnetic layer, having a magnetization direction that changes depending on an external magnetic field, and comprising 50 atomic % or more of TiOx, the thin film layer having a thickness of not less than 0.5 nm nor more than 3 nm; anda second magnetic layer disposed directly on said thin film layer and having a substantially fixed magnetization direction. 2. The magneto-resistive element according to claim 1, wherein the magnetization directions of said first and second magnetic layers are substantially orthogonal to the magnetization direction of said thin film layer when no external magnetic field is applied. 3. The magneto-resistive element according to claim 1, wherein at least one of said first and second magnetic layers contains as a major component at least one element selected from iron (Fe), cobalt (Co), and nickel (Ni). 4. The magneto-resistive element according to claim 3, wherein at least one of said first and second magnetic layers contains at least one alloy selected from a face-centered cubic alloy of cobalt and iron (fcc-CoFe alloy), a body-centered cubic alloy of iron and cobalt (bcc-FeCo alloy), a face-centered cubic alloy of nickel and iron (fcc-NiFe alloy), and a hexagonal close-packed alloy of cobalt (hcp-Co alloy). 5. The magneto-resistive element according to claim 3, wherein at least one of said first and second magnetic layers comprises an amorphous alloy material. 6. The magneto-resistive element according to claim 5, wherein the amorphous alloy material contains as a major component one alloy selected from a cobalt-iron-boron (CoFeB) alloy, a cobalt-zirconium-niobium (CoZrNb) alloy, an iron-zirconium-nitrogen (FeZrN) alloy, and an iron-aluminum-silicon (FeAlSi) alloy. 7. The magneto-resistive element according to claim 1, further comprising an antiferromagnetic layer or a hard magnetic layer fixing magnetization of at least one of said first and second magnetic layers. 8. The magneto-resistive element according to claim 7, wherein said antiferromagnetic layer comprises a manganese (Mn) alloy. 9. The magneto-resistive element according to claim 8, wherein the manganese (Mn) alloy contains as a major component one of iridium-manganese (IrMn) and platinum-manganese (PtMn). 10. The magneto-resistive element according to claim 7, wherein said hard magnetic layer contains as a major component at least one metal selected from cobalt (Co), cobalt-platinum (CoPt), cobalt-chromium-platinum (CoCrPt), and iron-platinum (FePt). 11. A magnetic head comprising the magneto-resistive element according to claim 1. 12. A magnetic recording apparatus comprising the magnetic head according to claim 11. 13. The magneto-resistive element according to claim 1, wherein the thin film layer further comprises at least one element selected from the group consisting of Fe, Co, Ni, Ti, Hf, Mg, Zr, V, Mn, Si, Cr, Nb, Ta, W, B and C.
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