IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0894860
(2010-09-30)
|
등록번호 |
US-8288245
(2012-10-16)
|
우선권정보 |
JP-2009-234949 (2009-10-09) |
발명자
/ 주소 |
- Ohnuma, Hideto
- Hanaoka, Kazuya
|
출원인 / 주소 |
- Semiconductor Energy Laboratory Co., Ltd.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
5 인용 특허 :
74 |
초록
▼
An object of an embodiment of the disclosed invention is to provide a method suitable for reprocessing a semiconductor substrate which is reused to manufacture an SOI substrate. A semiconductor substrate is reprocessed in the following manner: etching treatment is performed on a semiconductor substr
An object of an embodiment of the disclosed invention is to provide a method suitable for reprocessing a semiconductor substrate which is reused to manufacture an SOI substrate. A semiconductor substrate is reprocessed in the following manner: etching treatment is performed on a semiconductor substrate in which a step portion including a damaged semiconductor region and an insulating layer exists in a peripheral portion, whereby the insulating layer is removed; etching treatment is performed on the semiconductor substrate with the use of a mixed solution including a substance that oxidizes a semiconductor material included in the semiconductor substrate, a substance that dissolves the oxidized semiconductor material, and a substance that controls oxidation speed of the semiconductor material and dissolution speed of the oxidized semiconductor material, whereby the damaged semiconductor region is selectively removed with a non-damaged semiconductor region left; and heat treatment under an atmosphere including hydrogen is performed.
대표청구항
▼
1. A method for manufacturing an SOI substrate, comprising the steps of: providing a damaged semiconductor substrate, wherein the damaged semiconductor substrate comprises: a first damaged semiconductor region in a central portion of the damaged semiconductor substrate; anda step portion in a periph
1. A method for manufacturing an SOI substrate, comprising the steps of: providing a damaged semiconductor substrate, wherein the damaged semiconductor substrate comprises: a first damaged semiconductor region in a central portion of the damaged semiconductor substrate; anda step portion in a peripheral portion of the damaged semiconductor substrate, the step portion comprising: a first insulating layer; anda second damaged semiconductor region under the first insulating layer, the second damaged semiconductor region comprising: a semiconductor region under the first insulating layer; andan embrittlement region under the semiconductor region, removing the first insulating layer by a first etching treatment;starting to remove the first damaged semiconductor region and the second damaged semiconductor region by a second etching treatment,stopping the second etching treatment after an etching selectivity of the peripheral portion of the damaged semiconductor substrate to the central portion of the damaged semiconductor substrate per unit time is reduced from two or higher to lower than two, thereby a non-damaged semiconductor region is left, wherein the second etching treatment is performed using a mixed solution, and wherein the mixed solution comprises: a first substance capable of performing an oxidation of a semiconductor material included in the damaged semiconductor substrate;a second substance capable of performing a dissolution of an oxidized semiconductor material; anda third substance capable of controlling a speed of the oxidation of the semiconductor material and a speed of the dissolution of the oxidized semiconductor material;heating the damaged semiconductor substrate under an atmosphere including hydrogen after performing the second etching treatment, thereby a reprocessed semiconductor substrate is manufactured;irradiating the reprocessed semiconductor substrate with ions to form an embrittlement region in the reprocessed semiconductor substrate;bonding the reprocessed semiconductor substrate and a base substrate to each other with a second insulating layer interposed therebetween; andseparating the reprocessed semiconductor substrate at the embrittlement region to form a semiconductor layer over the second insulating layer. 2. The method for manufacturing an SOI substrate, according to claim 1, wherein the irradiation is performed without mass separation. 3. The method for manufacturing an SOI substrate, according to claim 1, wherein the ions include an H3+ ion. 4. The method for manufacturing an SOI substrate, according to claim 1, wherein etching selectivity of the second damaged semiconductor region to the non-damaged semiconductor region is 2 or higher. 5. The method for manufacturing an SOI substrate, according to claim 1, wherein at least a region where an angle between a tangent plane of the step portion and a back surface of the damaged semiconductor substrate is 0.5° or less is removed by the second etching treatment. 6. The method for manufacturing an SOI substrate, according to claim 1, wherein the first substance is nitric acid, the second substance is hydrofluoric acid, and the third substance is acetic acid. 7. The method for manufacturing an SOI substrate, according to claim 1, wherein a thickness of the first damaged semiconductor region is thinner than a thickness of the second damaged semiconductor region. 8. A method for manufacturing an SOI substrate, comprising the steps of: providing a damaged semiconductor substrate, wherein the damaged semiconductor substrate comprises: a first damaged semiconductor region in a central portion of the damaged semiconductor substrate; anda step portion in a peripheral portion of the damaged semiconductor substrate, the step portion comprising: a first insulating layer; anda second damaged semiconductor region under the first insulating layer, the second damaged semiconductor region comprising: a semiconductor region under the first insulating layer; andan embrittlement region under the semiconductor region, removing the first insulating layer by a first etching treatment;removing the first damaged semiconductor region and the second damaged semiconductor region by a second etching treatment, thereby a non-damaged semiconductor region is left, wherein the second etching treatment is performed using a mixed solution, and wherein the mixed solution comprises: a hydrofluoric acid;a nitric acid;an acetic acid; andwater;heating the damaged semiconductor substrate under an atmosphere including hydrogen after performing the second etching treatment, thereby a reprocessed semiconductor substrate is manufactured;irradiating the reprocessed semiconductor substrate with ions to form an embrittlement region in the reprocessed semiconductor substrate;bonding the reprocessed semiconductor substrate and a base substrate to each other with a second insulating layer interposed therebetween; andseparating the reprocessed semiconductor substrate at the embrittlement region to form a semiconductor layer over the second insulating layer, wherein a molar ratio of the mixed solution of the hydrofluoric acid, the nitric acid, the acetic acid and the water is 2.05:3.29:11.55:7.42, each having a margin of error of ±10%. 9. The method for manufacturing an SOI substrate, according to claim 8, wherein the irradiation is performed without mass separation. 10. The method for manufacturing an SOI substrate, according to claim 8, wherein the ions include an H3+ ion. 11. The method for manufacturing an SOI substrate, according to claim 8, wherein etching selectivity of the second damaged semiconductor region to the non-damaged semiconductor region is 2 or higher. 12. The method for manufacturing an SOI substrate, according to claim 8, wherein at least a region where an angle between a tangent plane of the step portion and a back surface of the damaged semiconductor substrate is 0.5° or less is removed by the second etching treatment. 13. The method for manufacturing an SOI substrate, according to claim 8, wherein a thickness of the first damaged semiconductor region is thinner than a thickness of the second damaged semiconductor region.
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