Apparatus for processing substrate and method of doing the same
원문보기
IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0548296
(2009-08-26)
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등록번호 |
US-8293128
(2012-10-23)
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우선권정보 |
JP-2003-326553 (2003-09-18); JP-2003-375975 (2003-11-05); JP-2004-230665 (2004-08-06) |
발명자
/ 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
0 인용 특허 :
5 |
초록
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A method of processing a substrate through the use of an apparatus, including a substrate carrier for carrying a substrate; a liquid-applying unit for applying chemical to said substrate; and a gas-applying unit for applying gas atmosphere to said substrate, wherein the method includes processing an
A method of processing a substrate through the use of an apparatus, including a substrate carrier for carrying a substrate; a liquid-applying unit for applying chemical to said substrate; and a gas-applying unit for applying gas atmosphere to said substrate, wherein the method includes processing an organic film pattern formed on a substrate, by, in sequence, removing one of an altered layer and a deposited layer formed on the organic film pattern, and fusing said organic film pattern for deformation by applying gas atmosphere to the organic film pattern in the gas-applying unit, wherein at least a part of the removal step is carried out by applying a liquid to the organic film pattern in the liquid-applying unit. The process may include an ashing unit for ashing the substrate and/or a development unit for developing the organic film pattern.
대표청구항
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1. A method of processing a substrate through the use of an apparatus comprising: a substrate carrier for carrying a substrate;a liquid-applying unit for applying a liquid to said substrate; anda gas-applying unit for applying gas atmosphere to said substrate,said method comprising a step of process
1. A method of processing a substrate through the use of an apparatus comprising: a substrate carrier for carrying a substrate;a liquid-applying unit for applying a liquid to said substrate; anda gas-applying unit for applying gas atmosphere to said substrate,said method comprising a step of processing an organic film pattern formed on a substrate, said step including, in sequence:a removal step of removing one of an altered layer and a deposited layer formed on said organic film pattern; anda fusion/deformation step of fusing said organic film pattern for deformation by applying gas atmosphere to said organic film pattern in said gas-applying unit,wherein at least a part of said removal step is carried out by applying said liquid to said organic film pattern in said liquid-applying unit, andsaid liquid comprises at least one amine selected from the group consisting of hydroxyl amine, diethylhydroxyl amine, diethylhydroxyl amine anhydride, pyridine and picoline in a range of 0.05 to 1.5 weight %. 2. A method of processing a substrate through the use of an apparatus comprising: a substrate carrier for carrying a substrate;a liquid-applying unit for applying a liquid to said substrate;a gas-applying unit for applying gas atmosphere to said substrate; andan ashing unit for ashing said substrate,said method comprising a step of processing an organic film pattern formed on a substrate, said step including, in sequence:a removal step of removing one of an altered layer and a deposited layer formed on said organic film pattern; anda fusion/deformation step of fusing said organic film pattern for deformation by applying gas atmosphere to said organic film pattern in said gas-applying unit,said removal step including, in sequence:ashing said organic film pattern in said ashing unit; andapplying said liquid to said organic film pattern in said liquid-applying unit,wherein said liquid comprises an amine selected from the group consisting of hydroxyl amine, diethylhydroxyl amine, diethylhydroxyl amine anhydride, pyridine and picoline in a range of 0.05 to 1.5 weight %. 3. A method of processing a substrate through the use of an apparatus comprising: a substrate carrier for carrying a substrate;a liquid-applying unit for applying a liquid to said substrate;a gas-applying unit for applying gas atmosphere to said substrate; andan ashing unit for ashing said substrate,said method comprising a step of processing an organic film pattern formed on a substrate, said step including, in sequence:a removal step of removing one of an altered layer and a deposited layer formed on said organic film pattern; anda fusion/deformation step of fusing said organic film pattern for deformation by applying gas atmosphere to said organic film pattern in said gas-applying unit,said removal step including, in sequence:applying said liquid to said organic pattern film in said liquid-applying unit; anddeveloping said organic film pattern in a development unit,wherein said liquid comprises an amine selected from the group consisting of hydroxyl amine, diethylhydroxyl amine, diethylhydroxyl amine anhydride, pyridine and picoline in a range of 0.05 to 1.5 weight %.
이 특허에 인용된 특허 (5)
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Motoda Takashi (Itami JPX) Karakida Shoichi (Itami JPX) Kaneno Nobuaki (Itami JPX) Kageyama Shigeki (Itami JPX), Apparatus for producing compound semiconductor devices.
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Van Buskirk Peter C. ; Fair James A. ; Kotecki David E., Method of delivering source reagent vapor mixtures for chemical vapor deposition using interiorly partitioned injector.
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Shusaku Kido JP, Pattern formation method and method of manufacturing display using it.
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Kuriki Yasuyuki,JPX ; Takamori Hideyuki,JPX ; Hara Kozo,JPX, Substrate processing apparatus.
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McMenamin Joseph C. (Fresno CA), Vapor mass flow control system.
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