초록 ▼

In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer pr

In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

대표청구항 ▼

1. A method of manufacturing a semiconductor device comprising: (a) preparing a semiconductor wafer;(b) forming a film containing a transition metal over the semiconductor wafer;(c) removing the film which is formed on a back surface or an edge region of a device surface of the semiconductor wafer;

1. A method of manufacturing a semiconductor device comprising: (a) preparing a semiconductor wafer;(b) forming a film containing a transition metal over the semiconductor wafer;(c) removing the film which is formed on a back surface or an edge region of a device surface of the semiconductor wafer; and(d) after step (c), performing a predetermined process to the semiconductor wafer,wherein the step (c) further comprises the following sub-steps:(c-1) supporting the edge of the semiconductor wafer with a plurality of pins which are disposed on a stage, under a condition in which a predetermined clearance is provided between the device surface of the semiconductor wafer and a surface of the stage and in which the device surface of the semiconductor wafer and the surface of the stage do not contact each other,(c-2) supplying a cleaning liquid to a back surface of the semiconductor wafer, while rotating the semiconductor wafer and the stage and supplying an inert gas to the device surface of the semiconductor wafer from the stage, andwherein, in the step (c-2), rotation speed of the stage is controlled to spread the cleaning liquid to the device surface of the semiconductor wafer. 2. The method of manufacturing a semiconductor device according to claim 1, wherein in the step (c-2), each of the plurality of pins is rotated relative to the device surface of the semiconductor wafer along a plane parallel to the device surface of the semiconductor wafer. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the transition metal is a platinum group metal. 4. The method of manufacturing a semiconductor device according to claim 3, wherein the transition metal is ruthenium. 5. The method of manufacturing a semiconductor device according to claim 1, wherein the transition metal is ruthenium.