초록 ▼

This disclosure pertains to a method and apparatus to permit changing a filter on the input line to a vacuum deposition chamber without breaking or reducing the vacuum for the deposition chamber and other components in the deposition system. Isolation valves are provided at the inlet and outlet of t

This disclosure pertains to a method and apparatus to permit changing a filter on the input line to a vacuum deposition chamber without breaking or reducing the vacuum for the deposition chamber and other components in the deposition system. Isolation valves are provided at the inlet and outlet of the filter so the filter can be isolated from the source of vacuum and the deposition chamber for removal and replacement of the filter.

대표청구항 ▼

1. An apparatus for thin film deposition and semiconductor device fabrication including: a. a vaporizer to generate a gas/vapor mixture;b. a vacuum chamber, containing a substrate on which a thin film is to be formed;c. a first filter for removing particles connected to carry a gas/vapor mixture flo

1. An apparatus for thin film deposition and semiconductor device fabrication including: a. a vaporizer to generate a gas/vapor mixture;b. a vacuum chamber, containing a substrate on which a thin film is to be formed;c. a first filter for removing particles connected to carry a gas/vapor mixture flow from the vaporizer to the vacuum chamber, said first filter comprising a plurality of concentric tubular porous metal filter elements of size to nest inside others and having wall members positioned around and between the tubular porous metal filter elements to form a flow path through tubular porous metal filter elements,d. a first set of isolation valves, including an isolation valve between the first filter and the vacuum chamber, selectively operable to allow and prevent said gas/vapor mixture flow to flow through said tubular porous metal filter elements of the first filter to the vacuum chamber; ande. a temperature controller configured to control said first filter and said first set of isolation valves at a temperature sufficient to prevent vapor condensation on said filter and said first set of isolation valves. 2. the apparatus of claim 1, further comprising a second filter connected to carry flow from the vaporizer to the vacuum chamber in flow parallel with the first filter, and a second set of isolation valves to selectively allow and prevent flow through the second filter independently of the first set of isolation valves. 3. A thin film deposition and semiconductor device fabrication apparatus, said apparatus including a vaporizer to generate a gas/vapor mixture, a chamber for holding a substrate on which a thin film of the gas/vapor mixture is to be deposited, and metal housing defining an interior housing space, and the metal housing being provided with a. an inlet coupled to the vaporizer and an outlet coupled to the chamber for permitting a gas/vapor mixture to enter and exit the interior housing space, said gas/vapor mixture containing a vapor for film deposition, andb. a plurality of tubular porous metal filter elements of progressively smaller size, placed one inside the other to form a nested porous metal filter structure in the housing, said tubular porous metal filter elements having first and second ends, a first end of an outer tubular porous metal filter element welded to an outlet end base wall of the housing, and inner porous metal filter elements being joined to the outer tubular porous metal filter element and to each other by metal pieces extending between adjacent tubular porous metal filer elements and welded to selected ends of the porous metal filter elements, so form a continuous gas flow structure separating the interior housing space into an upstream space and a downstream space, such that a gas/vapor mixture entering the metal housing through the inlet will flow into the upstream space, then through the tubular porous metal filter elements into the downstream space an through the outlet of said metal housing to the chamber. 4. The filtration apparatus of claim 3, further comprising a heater in thermal contact with said metal housing to heat the metal housing to a temperature sufficient to prevent vapor condensation in said apparatus.