IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0483588
(2009-06-12)
|
등록번호 |
US-8298937
(2012-10-30)
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발명자
/ 주소 |
- Darnon, Maxime
- Gambino, Jeffrey P.
- Huang, Elbert E.
- Lin, Qinghuang
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출원인 / 주소 |
- International Business Machines Corporation
|
대리인 / 주소 |
Scully, Scott, Murphy & Presser, P.C.
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인용정보 |
피인용 횟수 :
0 인용 특허 :
12 |
초록
▼
An interconnect structure within a microelectronic structure and a method for fabricating the interconnect structure within the microelectronic structure use a developable bottom anti-reflective coating layer and at least one imageable inter-level dielectric layer located thereupon over a substrate
An interconnect structure within a microelectronic structure and a method for fabricating the interconnect structure within the microelectronic structure use a developable bottom anti-reflective coating layer and at least one imageable inter-level dielectric layer located thereupon over a substrate that includes a base dielectric layer and a first conductor layer located and formed embedded within the base dielectric layer. Incident to use of the developable bottom anti-reflective coating layer and the at least one imageable inter-level dielectric layer, an aperture, such as but not limited to a dual damascene aperture, may be formed through the at least one imageable inter-level dielectric layer and the developable anti-reflective coating layer to expose a capping layer located and formed upon the first conductor layer, absent use of a dry plasma etch method when forming the interconnect structure within the microelectronic structure.
대표청구항
▼
1. A method for fabricating a microelectronic structure comprising: forming a developable but not imageable bottom anti-reflective coating layer over a substrate that includes a first conductor layer formed within a base dielectric layer;forming at least one imageable inter-level dielectric layer up
1. A method for fabricating a microelectronic structure comprising: forming a developable but not imageable bottom anti-reflective coating layer over a substrate that includes a first conductor layer formed within a base dielectric layer;forming at least one imageable inter-level dielectric layer upon the developable but not imageable anti-reflective coating layer, said at least one imageable inter-level dielectric layer comprising a functionalized polymer having one or more acid-sensitive functional groups; andimaging and developing the imageable inter-level dielectric layer and developing the developable but not imageable bottom anti-reflective coating layer to form a patterned inter-level dielectric layer formed upon a patterned bottom anti-reflective coating layer that defines an aperture located over the first conductor layer. 2. The method of claim 1 wherein the forming over the substrate uses a dielectric substrate. 3. The method of claim 1 wherein the forming over the substrate uses a semiconductor substrate. 4. The method of claim 1 wherein the aperture comprises a damascene aperture. 5. The method of claim 1 wherein the aperture comprises a dual damascene aperture. 6. The method of claim 1 further comprising forming a second conductor layer within the aperture. 7. The method of claim 1 wherein the developable but not imageable bottom anti-reflective coating layer includes an element selected from the group consisting of C Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La. 8. A method for fabricating a microelectronic structure comprising: forming a first capping layer self-aligned upon a first conductor layer formed within a base dielectric layer formed over a substrate;forming a developable but not imageable bottom anti-reflective coating layer over the substrate that includes the first capping layer formed upon the first conductor layer formed within the base dielectric layer;forming at least one imageable inter-level dielectric layer upon the developable but not imageable bottom anti-reflective coating layer, said at least one imageable inter-level dielectric layer comprising a functionalized polymer having one or more acid-sensitive functional groups; andimaging and developing the at least one imageable inter-level dielectric layer and developing the developable but not imageable bottom anti-reflective coating layer to form a patterned inter-level dielectric layer formed upon a patterned bottom anti-reflective coating layer that defines an aperture located over the first conductor layer. 9. The method of claim 8 wherein the first conductor layer is formed planarized with respect to the base dielectric layer. 10. The method of claim 8 wherein the first capping layer is formed planarized with respect to the base dielectric layer. 11. The method of claim 8 further comprising forming a second conductor layer into the aperture. 12. The method of claim 8 wherein the developable but not imageable bottom anti-reflective coating layer includes an element selected from the group consisting of C Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La. 13. The method of claim 1 wherein the developable but not imageable bottom anti-reflective coating layer comprises a polymer that includes at least one monomer unit comprising the formula M-R1 wherein M is at least one of C, Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La, and R1 is a chromophore. 14. The method of claim 8 wherein the developable but not imageable bottom anti-reflective coating layer comprises a polymer that includes at least one monomer unit comprising the formula M-R1 wherein M is at least one of C, Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La, and R1 is a chromophore. 15. The method of claim 1 wherein the developable but not imageable bottom anti-reflective coating layer comprises a polymer that includes at least one first monomer unit comprising the formula M-R1 wherein M is at least one of C, Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La, and R1 is a chromophore, and a second monomer unit comprising the formula M′-R2 wherein M′ is at least one of C, Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R2 is a cross-linking agent. 16. The method of claim 8 wherein the developable but not imageable bottom anti-reflective coating layer comprises a polymer that includes at least one first monomer unit comprising the formula M-R1 wherein M is at least one of C, Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La, and R1 is a chromophore, and a second monomer unit comprising the formula M′-R2 wherein M′ is at least one of C, Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R2 is a cross-linking agent.
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