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Provided are a semiconductor device and a method of forming a semiconductor device in which a plurality of patterns are simultaneously formed to have different widths and the pattern densities of some regions are increased using a double patterning. The semiconductor device includes a plurality of c

Provided are a semiconductor device and a method of forming a semiconductor device in which a plurality of patterns are simultaneously formed to have different widths and the pattern densities of some regions are increased using a double patterning. The semiconductor device includes a plurality of conductive lines each including a first line portion and a second line portion, where the first line portion extends on a substrate in a first direction, the second line portion extends from one end of the first line portion in a second direction different from the first direction; a plurality of contact pads each of which is connected with a respective conductive line of the plurality of conductive lines and a respective second line portion of a respective conductive line of the plurality of conductive lines; and a plurality of dummy conductive lines each including a first dummy portion extending from a respective contact pad of the plurality of contact pads, in parallel with the corresponding second line portion in the second direction.

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1. A semiconductor device comprising: a plurality of conductive lines each comprising a first line portion extending on a substrate in a first direction and a second line portion extending from one end of the first line portion in a second direction different from the first direction;a plurality of

1. A semiconductor device comprising: a plurality of conductive lines each comprising a first line portion extending on a substrate in a first direction and a second line portion extending from one end of the first line portion in a second direction different from the first direction;a plurality of contact pads being respectively connected to the second line portions of the plurality of conductive lines; anda plurality of dummy conductive lines being respectively connected to the plurality of conductive lines via the plurality of contact pads, and extending from the plurality of contact pads to be opposite to the second line portions in parallel with the second line portions, wherein:the plurality of conductive lines each comprise a first conductive line and a second conductive line which are adjacent to each other,the plurality of contact pads each comprise a first contact pad connected to the second line portion of the first conductive line and a second contact pad connected to the second line portion of the second conductive line,the first and second contact pads are symmetrical with each other about a line extending in the second direction,the first contact pad comprises a first concavo-convex line pattern extending from the second line portion of the first conductive line to the first dummy conductive line,the second contact pad comprises a second concavo-convex line pattern extending from the second line portion of the second conductive line to the second dummy conductive line,the first concavo-convex line pattern extends having the same width as the second line portion of the first conductive line in a direction of the length of the first concavo-convex line pattern, andthe second concavo-convex line pattern extends having the same width as the second line portion of the second conductive line in a direction of the length of the second concavo-convex line pattern. 2. The semiconductor device of claim 1, wherein the space defined by the first and second concavo-convex line patterns is less than or equal to the distance between the first and second dummy conductive line patterns.