초록 ▼

A glass substrate processing method includes irradiating laser light L onto a glass substrate 1 such that the laser light L is focused within the glass substrate 1, thereby forming a high density area 3 that has a higher density than areas where the laser light L is not irradiated around the portion

A glass substrate processing method includes irradiating laser light L onto a glass substrate 1 such that the laser light L is focused within the glass substrate 1, thereby forming a high density area 3 that has a higher density than areas where the laser light L is not irradiated around the portion where the laser light L is focused; and performing chemical etching on the glass substrate 1 using an etching solution such that at least a portion of the high density area is allowed to remain, thereby forming a projection 2 on a surface 1a of the glass substrate 1.

대표청구항 ▼

1. A glass substrate processing method for forming a projection on a surface of a glass substrate comprising: irradiating laser light onto the glass substrate such that the laser light is focused on a portion within the glass substrate, said irradiating forming a high density area around the portion

1. A glass substrate processing method for forming a projection on a surface of a glass substrate comprising: irradiating laser light onto the glass substrate such that the laser light is focused on a portion within the glass substrate, said irradiating forming a high density area around the portion where the laser light is focused that has a higher density and a lower etching rate than areas where the laser light was not irradiated such that the surface shape of the glass substrate is maintained in the surface shape thereof previous to irradiating the laser light; andforming the projection on the surface of the glass substrate by performing chemical etching on the glass substrate using an etching solution and by controlling the amount of the etching such that the high density area around the portion where the laser light is focused is allowed to remain. 2. The glass substrate processing method according to claim 1, wherein the glass substrate includes SiO2 and 1 mol % or more of Al2O3, and a difference between the percentage content of the SiO2 and the percentage content of the Al2O3 is 40 mol % or more and 67 mol % or less. 3. The glass substrate processing method according to claim 2, wherein the difference between the percentage content of the SiO2 and the percentage content of the Al2O3 is 47 mol % or more and 57 mol % or less. 4. A glass substrate processing method for forming a projection on a surface of a thin layer composed of one or more layers of inorganic material and formed on the glass substrate, comprising: irradiating laser light onto the thin layer such that the laser light is focused on a portion within the thin layer, said irradiating forming a high density area around the portion where the laser light is focused that has a higher density and a lower etching rate than areas where the laser light was not irradiated such that the surface shape of the thin layer is maintained in the surface shape thereof previous to irradiating the laser light; andforming the projection on the surface of the thin layer by performing chemical etching on the thin layer using an etching solution and by controlling the amount of the etching such that the high density area around the portion where the laser light is focused is allowed to remain. 5. The glass substrate processing method according to claim 4, further comprising: performing a second etching on the thin layer and the glass substrate from the side of the surface of the thin layer after the projection has been formed on the surface of the thin layer thereby foaming a new projection on the surface of the glass substrate such that the projection of the thin layer is reflected in the glass substrate. 6. The glass substrate processing method according to claim 5, wherein an etching rate of the etching for the glass substrate is higher than an etching rate of the etching for the thin layer. 7. The glass substrate processing method according to claim 4, wherein the thin layer is formed of a glassy material containing SiO2 as a main component and containing at least Al2O3. 8. The glass substrate processing method according to claim 1 or 4, wherein the laser light is pulse laser light. 9. The glass substrate processing method according to claim 8, wherein an energy intensity of single pulse of laser light per unit area at a focal position of the pulse laser light is less than 150 J/cm2. 10. The glass substrate processing method according to claim 9, wherein an energy intensity of single pulse of laser light per unit area at a focal position of the pulse laser light is more than 5 J/cm2. 11. The glass substrate processing method according to any one of claim 2, 3 or 7, wherein the laser light is pulse laser light, andan energy intensity of single pulse of laser light per unit area at a focal position of the pulse laser light is more than 5 J/cm2 and less than 300 J/cm2. 12. The glass substrate processing method according to claim 1 or 4 wherein the etching solution is a hydrofluoric acid solution with not more than two percent by weight of concentration. 13. The glass substrate processing method according to claim 1 or 4, further comprising: moving the laser light in at least one of the directions that is parallel with and perpendicular to the surface of the glass substrate during the laser light irradiation. 14. The glass substrate processing method according to claim 1 or 4, further comprising: varying the energy intensity of the laser light during the laser light irradiation.