초록 ▼

Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming a thin film material during an epitaxial lift off process is provided which includes forming an epitaxial material

Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming a thin film material during an epitaxial lift off process is provided which includes forming an epitaxial material over a sacrificial layer on a substrate, adhering a non-uniform support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process further includes peeling the epitaxial material from the substrate while forming an etch crevice therebetween and bending the support handle to form compression in the epitaxial material during the etching process. In one example, the non-uniform support handle contains a wax film having a varying thickness.

대표청구항 ▼

1. A thin film stack material for at least one of a solar device, a semiconductor device, and an electronic device, comprising: a sacrificial layer disposed on a substrate;an epitaxial material disposed over the sacrificial layer; anda support handle disposed over the epitaxial material, wherein the

1. A thin film stack material for at least one of a solar device, a semiconductor device, and an electronic device, comprising: a sacrificial layer disposed on a substrate;an epitaxial material disposed over the sacrificial layer; anda support handle disposed over the epitaxial material, wherein the support handle comprises a wax film having a varying thickness that does not reflect a contour of said epitaxial material, and wherein the thickness varies linearly. 2. The thin film stack material of claim 1, wherein the support handle comprises a bottom surface of the wax film and a top surface of a flexible member, and the bottom surface is adhered to the epitaxial material. 3. The thin film stack material of claim 2, wherein the flexible member comprises a material selected from the group consisting of plastic, polymer, oligomer, derivatives thereof, and combinations thereof. 4. The thin film stack material of claim 1, wherein the wax film comprises wax which has a softening point temperature within a range from about 65° C. to about 95° C. 5. The thin film stack material of claim 4, wherein the varying thickness of the wax film is within a range from about 1 μm to about 100 μm. 6. The thin film stack material of claim 1, wherein the epitaxial material comprises a material selected from the group consisting of gallium arsenide, aluminum gallium arsenide, indium gallium phosphide, alloys thereof, derivatives thereof, and combinations thereof. 7. The thin film stack material of claim 1, wherein the epitaxial material comprises a cell structure containing multiple layers comprising at least one material selected from the group consisting of gallium arsenide, n-doped gallium arsenide, p-doped gallium arsenide, aluminum gallium arsenide, n-doped aluminum gallium arsenide, p-doped aluminum gallium arsenide, indium gallium phosphide, alloys thereof, derivatives thereof, and combinations thereof. 8. The thin film stack material of claim 1, wherein the sacrificial layer comprises a material selected from the group consisting of aluminum arsenide, alloys thereof, derivatives thereof, and combinations thereof. 9. The thin film stack material of claim 1, wherein the substrate comprises gallium arsenide, n-doped gallium arsenide, p-doped gallium arsenide, or derivatives thereof. 10. The thin film stack material of claim 1, wherein the varying thickness of the wax film is thinnest near a middle of the wax film. 11. The thin film stack material of claim 1, wherein the varying thickness of the wax film is thickest near a middle of the wax film.