IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
US-0585855
(2009-09-25)
|
| 등록번호 |
US-8315020
(2012-11-20)
|
| 우선권정보 |
JP-2008-249226 (2008-09-26) |
|
발명자
/ 주소 |
- Yuasa, Hiromi
- Fukuzawa, Hideaki
- Fuji, Yoshihiko
- Murakami, Shuichi
- Hara, Michiko
- Zhang, Kunliang
- Li, Min
- Schreck, Erhard
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
|
| 인용정보 |
피인용 횟수 :
0 인용 특허 :
130 |
초록
▼
A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic laye
A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of hydrogen molecules, hydrogen atoms, hydrogen ions, hydrogen plasma, hydrogen radicals, deuterium molecules, deuterium atoms, deuterium ions, deuterium plasma and deuterium radicals on the film submitted to the first treatment.
대표청구항
▼
1. A method for manufacturing a magneto-resistance effect element having a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer
1. A method for manufacturing a magneto-resistance effect element having a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer, the method comprising: forming a film to be a base material of the spacer layer;performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; andperforming a second treatment using a gas including at least one of hydrogen molecules, hydrogen atoms, hydrogen ions, hydrogen plasma, hydrogen radicals, deuterium molecules, deuterium atoms, deuterium ions, deuterium plasma and deuterium radicals on the film submitted to the first treatment. 2. The method according to claim 1, wherein the second treatment includes a treatment of at least one of exposing the film with at least one of hydrogen gas and deuterium gas and introducing at least one of hydrogen gas and deuterium gas in an atmosphere achieved by ionizing or forming plasma of a gas including at least one selected from the group consisting of argon, xenon, helium, neon and krypton. 3. The method according to claim 1, wherein the second treatment includes a treatment of irradiating the film submitted to the first treatment with at least one of hydrogen gas and deuterium gas ionized or formed into plasma. 4. A method for manufacturing a magneto-resistance effect device having a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer, the method comprising: forming a film to be a base material of the spacer layer;performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals to the film; andperforming a second treatment using a gas including at least one of ammonia molecules, ammonia ions, ammonia plasma and ammonia radicals to the film submitted to the first treatment. 5. The method according to claim 4, wherein the second treatment includes a treatment of introducing ammonia gas in an atmosphere achieved by ionizing or forming plasma of a gas including at least one selected from the group consisting of argon, xenon, helium, neon and krypton. 6. The method according to claim 4, wherein the second treatment includes a treatment of irradiating the film submitted to the first treatment with ammonia gas ionized or formed into plasma. 7. The method according to claim 1, wherein the second treatment is performed while heating the film submitted to the first treatment. 8. The method according to claim 1, further comprising: performing a third treatment including at least one of irradiating the film submitted to the second treatment with rare gas ions, irradiating the film submitted to the second treatment with rare gas plasma and heating the film submitted to the second treatment. 9. The method according to claim 8, wherein a combination of the performing the second treatment and the performing the third treatment is repeated plural times. 10. The method according to claim 8, wherein a combination of the forming the film, the performing the first treatment, the performing the second treatment and the performing the third treatment is repeated plural times. 11. The method according to claim 8, further comprising: performing a fourth treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals to the film submitted to the third treatment. 12. The method according to claim 1, wherein a combination of the forming the film, the performing the first treatment and the performing the second treatment is repeated plural times. 13. The method according to claim 1, wherein a combination of the forming the film and the performing the first treatment is repeated plural times. 14. The method according to claim 1, wherein the forming the film includes forming a first metallic film and a second metallic film, and the performing the first treatment includes exposing the second metallic film to oxidizing gas. 15. The method according to claim 1, wherein the forming the film includes forming a first metallic film and a second metallic film, and the performing the first treatment includes providing oxygen gas to the second metallic film, the oxygen gas being introduced in an atmosphere achieved by ionizing or forming plasma of a gas including at least one selected from the group consisting of argon, xenon, helium, neon and krypton. 16. The method according to claim 1, wherein the forming the film includes forming a first metallic film and a second metallic film, andthe performing first treatment includes:performing a pretreatment of irradiating the second metallic film with a gas ionized or formed into plasma, the gas including at least one selected from the group consisting of argon, xenon, helium, neon and krypton; andproviding the oxygen gas to the second metallic film submitted to the pretreatment, the oxygen gas being introduced in an atmosphere achieved by ionizing or forming plasma of a gas including at least one selected from the group consisting of argon, xenon, helium, neon and krypton. 17. The method according to claim 16, wherein the first metallic film includes at least one selected from the group consisting of Cu, Au, Ag and Al, and the second metallic film includes at least one selected from the group consisting Al, Si, Mg, Ti, Hf, Zr, Cr, Mo, Nb and W. 18. The method according to claim 8, wherein a high frequency bias configured to generate the rare gas ions or the rare gas plasma in the third treatment has a power from 5 W to 120 W inclusive. 19. The method according to claim 8, wherein an irradiation time of the rare gas ions or the rare gas plasma in the third treatment is from 5 seconds to 5 minutes inclusive. 20. A method of manufacturing a magneto-resistance effect element for a magnetic recording and reproducing apparatus comprising: a magnetic head assembly including a suspension, the magneto-resistance effect element being mounted on one end of the suspension, and an actuator arm connected to other end of the suspension; anda magnetic recording medium, information being recorded in the magnetic recording medium by using the magneto-resistance effect element,the magneto-resistance effect element having a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer,the method of manufacturing the magneto-resistance effect element including:forming a film to be a base material of the spacer layer;performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; andperforming a second treatment using a gas including at least one of hydrogen molecules, hydrogen atoms, hydrogen ions, hydrogen plasma, hydrogen radicals, deuterium molecules, deuterium atoms, deuterium ions, deuterium plasma and deuterium radicals on the film submitted to the first treatment.
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