IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0848176
(2010-08-01)
|
등록번호 |
US-8324653
(2012-12-04)
|
발명자
/ 주소 |
- Lin, Charles W. C.
- Wang, Chia-Chung
|
출원인 / 주소 |
- Bridge Semiconductor Corporation
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
7 인용 특허 :
55 |
초록
▼
A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an insulative material. The heat spreader includes a base and a ceramic block. The conductive trace provides signal routing between a pad and a terminal. The insulative material extends between the
A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an insulative material. The heat spreader includes a base and a ceramic block. The conductive trace provides signal routing between a pad and a terminal. The insulative material extends between the base and the terminal. The ceramic block is embedded in the base. The semiconductor device overlaps the ceramic block, is electrically connected to the conductive trace and is thermally connected to the heat spreader.
대표청구항
▼
1. A semiconductor chip assembly, comprising: a semiconductor device;an insulative material;a heat spreader that includes a base and a ceramic block, wherein the base is metal and the ceramic block contacts and is embedded in the base in a cavity that extends into the base and faces in an upward dir
1. A semiconductor chip assembly, comprising: a semiconductor device;an insulative material;a heat spreader that includes a base and a ceramic block, wherein the base is metal and the ceramic block contacts and is embedded in the base in a cavity that extends into the base and faces in an upward direction; anda conductive trace that includes a pad and a terminal;wherein the semiconductor device overlaps the ceramic block, is electrically connected to the pad and thereby electrically connected to the terminal, and is thermally connected to the ceramic block and thereby thermally connected to the base;wherein the insulative material is sandwiched between the base and the terminal;wherein the conductive trace is located outside the cavity; andwherein base and the terminal have the same thickness and are coplanar with one another. 2. The assembly of claim 1, wherein the semiconductor device is an LED chip. 3. The assembly of claim 1, wherein the semiconductor device is a semiconductor chip, is electrically connected to the pad using a wire bond and is thermally connected to the ceramic block using a die attach. 4. The assembly of claim 1, wherein the semiconductor device is electrically isolated from the base by the ceramic block. 5. The assembly of claim 1, wherein the ceramic block is located within and fills the cavity. 6. The assembly of claim 1, wherein the ceramic block is coplanar with the base and the terminal at a lateral surface that faces in the upward direction. 7. The assembly of claim 1, wherein the ceramic block is embedded in the base alone and is spaced from the conductive trace and the insulative material. 8. The assembly of claim 1, wherein the ceramic block is embedded in the base and the terminal and contacts the base, the terminal and the insulative material. 9. The assembly of claim 1, wherein the base, the terminal and the insulative material extend to peripheral edges of the assembly. 10. The assembly of claim 1, wherein the base is copper or aluminum and the ceramic block is alumina, silicon carbide or aluminum nitride. 11. A semiconductor chip assembly, comprising: a semiconductor device;an insulative material;a heat spreader that includes a base, a cap and a ceramic block, wherein the base and the cap are metal, the ceramic block contacts and is embedded in the base in a cavity that extends into the base and faces in an upward direction, the ceramic block is located within and fills the cavity and is coplanar with the base at a lateral surface that faces in the upward direction and the cap contacts and overlaps the ceramic block; anda conductive trace that includes a pad and a terminal;wherein the semiconductor device overlaps the cap and the ceramic block, is electrically connected to the pad and thereby electrically connected to the terminal, is electrically isolated from the base by the ceramic block, and is thermally connected to the cap and thereby thermally connected to the ceramic block and thereby thermally connected to the base;wherein the insulative material contacts and is sandwiched between the base and the terminal;wherein the conductive trace is located outside the cavity; andwherein base and the terminal have the same thickness and are coplanar with one another. 12. The assembly of claim 11, wherein the semiconductor device is a semiconductor chip, is electrically connected to the pad using a wire bond and is thermally connected to the cap block using a die attach. 13. The assembly of claim 11, wherein the ceramic block is embedded in the base alone and is spaced from the conductive trace and the insulative material. 14. The assembly of claim 11, wherein the base, the terminal and the insulative material extend to peripheral edges of the assembly. 15. The assembly of claim 11, wherein the base is copper or aluminum and the ceramic block is alumina, silicon carbide or aluminum nitride. 16. A semiconductor chip assembly, comprising: a semiconductor device;an insulative material;a heat spreader that includes a base and a first ceramic block, wherein the base is metal and the first ceramic block contacts and is embedded in the base in a first cavity that extends into the base alone and faces in an upward direction;a second ceramic block; anda conductive trace that includes a pad and a terminal;wherein the semiconductor device overlaps the first ceramic block, is electrically connected to the pad and thereby electrically connected to the terminal, and is thermally connected to the first ceramic block and thereby thermally connected to the base;wherein the insulative material contacts and is sandwiched between the base and the terminal;wherein the first ceramic block is spaced from the insulative material;wherein the second ceramic block contacts and is embedded in the base and the terminal in a second cavity that extends into the base and the terminal and faces in the upward direction and contacts the insulative material;wherein the conductive trace is located outside the first cavity and contacts and overlaps the second ceramic block over the base, the terminal and the insulative material; andwherein base and the terminal have the same thickness and are coplanar with one another and the ceramic blocks have the same thickness and are coplanar with one another. 17. The assembly of claim 16, wherein the semiconductor device is a semiconductor chip, is electrically connected to the pad using a wire bond and is thermally connected to the first ceramic block using a die attach. 18. The assembly of claim 16, wherein the semiconductor device is electrically isolated from the base by the first ceramic block and the conductive trace is electrically isolated from the base by the insulative material and the second ceramic block. 19. The assembly of claim 16, wherein the base, the terminal and the ceramic blocks are coplanar with one another at a lateral surface that faces in the upward direction. 20. The assembly of claim 16, wherein the base is copper and the ceramic blocks are alumina.
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