초록 ▼

A current source is switchable between two precisely defined output currents. A terminal of a coupling capacitor is coupled to the gate of an output MOSFET. The other terminal of the capacitor is switched between two reference voltages to toggle the output MOSFET to output the selected one of the tw

A current source is switchable between two precisely defined output currents. A terminal of a coupling capacitor is coupled to the gate of an output MOSFET. The other terminal of the capacitor is switched between two reference voltages to toggle the output MOSFET to output the selected one of the two currents. A switchable bias voltage source is coupled to the gate only during the on state of the output MOSFET to set the gate voltage of the output MOSFET. The current output of the current source is quickly and accurately changed. A reference MOSFET is not directly coupled to the output MOSFET, so there are no slow settling components coupled to the gate of the output MOSFET.

대표청구항 ▼

1. A current source comprising: an output MOSFET having a gate, the output MOSFET being controlled to have two different conductivity states for generating different currents;a first terminal of a first capacitor, having a first capacitance, coupled to the gate;a bias voltage source selectively coup

1. A current source comprising: an output MOSFET having a gate, the output MOSFET being controlled to have two different conductivity states for generating different currents;a first terminal of a first capacitor, having a first capacitance, coupled to the gate;a bias voltage source selectively coupled to the gate;a first switch coupled between a second terminal of the first capacitor and a first reference voltage; anda second switch coupled between the second terminal of the first capacitor and a second reference voltage, the first switch and the second switch being configured to switch oppositely,wherein, when the first switch conducts, the bias voltage source is coupled to the gate and, when the second switch conducts, the bias voltage source is decoupled from the gate,and wherein, when the first switch conducts, the output MOSFET is controlled to have a first conductivity and, when the second switch conducts, the output MOSFET is controlled to have a second conductivity lower than the first conductivity. 2. The current source of claim 1 wherein a second capacitance exists across the output MOSFET, wherein, the first conductivity of the output MOSFET is determined by at least the bias voltage source. 3. The current source of claim 2 wherein the first conductivity is independent of the first reference voltage and the second reference voltage. 4. The current source of claim 3 wherein a bias voltage generated by the bias voltage source is VBIAS, the first reference voltage is VREF1, the first capacitor is C1, and the second capacitance is C2, wherein a gate voltage applied to the output MOSFET when the second switch conducts is approximately VBIAS−[VREF1*C1/(C1+C2)]. 5. The current source of claim 4 wherein the second capacitance comprises a parasitic capacitance of the output MOSFET. 6. The current source of claim 1 wherein the bias voltage source comprises: a first bias voltage source generating a first bias voltage;a second capacitor having a first terminal connected to ground;a third switch coupled between the first bias voltage source and a second terminal of the second capacitor, the third switch conducting when the second switch conducts;a fourth switch coupled between the second terminal of the second capacitor and the gate of the output MOSFET, the fourth switch conducting when the first switch conducts,whereby, when the second switch and third switch are conducting, the second capacitor is coupled to the first bias voltage source and decoupled from the output MOSFET, andwhen the first switch and fourth switch are conducting, the second capacitor is coupled to the gate of the output MOSFET and decoupled from the first bias voltage source. 7. The current source of claim 6 wherein the first bias voltage source comprises a reference MOSFET having its drain connected to a reference current source and its gate connected to its drain, wherein a gate voltage of the reference MOSFET generates the first bias voltage. 8. The current source of claim 1 further comprising a timing control circuit that receives a master control signal and generates a first control signal for controlling the first switch and generates a second control signal for controlling the second switch to switch opposite to the first switch. 9. The current source of claim 1 wherein the first conductivity causes a first current to be generated by the output MOSFET and wherein the second conductivity causes a second current to be generated by the output MOSFET. 10. The current source of claim 1 wherein the first conductivity causes a first current to be generated by the output MOSFET and wherein the second conductivity is substantially an open circuit to cause substantially zero current to be generated by the output MOSFET. 11. A method of generating a switchable current through an output MOSFET, a first terminal of a first capacitor, having a first capacitance, being connected to a gate of the output MOSFET, the method comprising: for generating a first current, turning on a first switch coupled between a second terminal of the first capacitor and a first reference voltage, and turning off a second switch coupled between the second terminal of the first capacitor and a second reference voltage, the first switch and the second switch being configured to switch oppositely;coupling a bias voltage source to the gate when the first switch is on, whereby, when the first switch is turned on, the output MOSFET is controlled to have a first conductivity; andfor generating a second current, turning off the first switch and turning on the second switch, while decoupling the bias voltage source from the gate when the first switch is off, whereby, when the first switch is turned off, the output MOSFET is controlled to have a second conductivity, lower than the first conductivity. 12. The method of claim 11 wherein a second capacitance exists across the output MOSFET, wherein, the first conductivity of the output MOSFET is controlled by at least the bias voltage source. 13. The method of claim 12 wherein the first conductivity is independent of the first reference voltage and the second reference voltage. 14. The method of claim 13 wherein a first bias voltage generated by the bias voltage source is VBIAS, the first reference voltage is VREF1, the first capacitor is C1, and the second capacitance is C2, wherein a gate voltage applied to the output MOSFET when the second switch conducts is approximately VBIAS−[VREF1*C1/(C1+C2)]. 15. The method of claim 14 wherein the second capacitance comprises a parasitic capacitance of the output MOSFET. 16. The method of claim 11 wherein decoupling the bias voltage source from the gate and coupling the bias voltage source to the gate comprises: generating a first bias voltage by the bias voltage source;coupling the first bias voltage to a second capacitor by turning on a third switch, when the second switch is on, to charge the second capacitor to the first bias voltage;decoupling the second capacitor from the gate by turning off a fourth switch when the second switch is on;decoupling the first bias voltage from the second capacitor by turning off the third switch, when the second switch is off; andcoupling the second capacitor to the gate by turning on the fourth switch when the second switch is off. 17. The method of claim 16 wherein the bias voltage source comprises a reference MOSFET having its drain connected to a reference current source and its gate connected to its drain, wherein a gate voltage of the reference MOSFET generates the first bias voltage. 18. The method of claim 11 further comprising generating a first control signal for controlling the first switch and generating a second control signal for controlling the second switch to switch opposite to the first switch. 19. The method of claim 11 wherein the first conductivity causes a first current to be generated by the output MOSFET and, wherein the second conductivity causes a second current to be generated by the output MOSFET. 20. The method of claim 11 wherein the first conductivity causes a first current to be generated by the output MOSFET and, wherein the second conductivity is substantially an open circuit to cause substantially zero current to be generated by the output MOSFET.