IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0482086
(2009-06-10)
|
등록번호 |
US-8338218
(2012-12-25)
|
우선권정보 |
JP-2008-166681 (2008-06-26) |
발명자
/ 주소 |
|
출원인 / 주소 |
- Semiconductor Energy Laboratory Co., Ltd.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
2 인용 특허 :
19 |
초록
▼
A manufacturing method of a photoelectric conversion device module, wherein an insulating layer and a first electrode are formed over a base substrate; a plurality of single-crystal semiconductor substrates having a first conductivity type including embrittlement layers formed inside are attached; t
A manufacturing method of a photoelectric conversion device module, wherein an insulating layer and a first electrode are formed over a base substrate; a plurality of single-crystal semiconductor substrates having a first conductivity type including embrittlement layers formed inside are attached; the plurality of single-crystal semiconductor substrates are separated at the embrittlement layers so that a plurality of stacked bodies including the insulating layer, the first electrode and a first single-crystal semiconductor layer is formed; a second single-crystal semiconductor layer is formed over the stacked bodies to form a first photoelectric conversion layer; a second photoelectric conversion layer including a non-single-crystal semiconductor layer is formed; a second electrode is formed; and selective etching is conducted to form photoelectric conversion cells which are element-separated, and a connecting electrode is formed to connect the second electrode of one photoelectric conversion cell and the first electrode of the other photoelectric conversion cell.
대표청구항
▼
1. A method for manufacturing a photoelectric conversion device module, comprising: preparing a plurality of single-crystal semiconductor substrates, wherein each of the plurality of single-crystal semiconductor substrates is provided with a first electrode and an insulating layer over one surface t
1. A method for manufacturing a photoelectric conversion device module, comprising: preparing a plurality of single-crystal semiconductor substrates, wherein each of the plurality of single-crystal semiconductor substrates is provided with a first electrode and an insulating layer over one surface thereof and an embrittlement layer therein;attaching the plurality of single-crystal semiconductor substrates to a base substrate with the first electrode and the insulating layer therebetween so that the insulating layer and the base substrate are bonded, wherein the plurality of single-crystal semiconductor substrates are arranged over the base substrate with an interval therebetween;separating each of the plurality of single-crystal semiconductor substrates at the embrittlement layer as a boundary, whereby a plurality of stacked bodies in which the insulating layer, the first electrode and a first single-crystal semiconductor layer having a first conductivity type are stacked sequentially are formed over the base substrate;forming a second single-crystal semiconductor layer over the plurality of stacked bodies so as to cover the plurality of stacked bodies and a space between the plurality of stacked bodies adjacent to each other;forming a second impurity semiconductor layer having a second conductivity type opposite to the first conductivity type over the second single-crystal semiconductor layer so that a first photoelectric conversion layer in which the first single-crystal semiconductor layer, the second single-crystal semiconductor layer and the second impurity semiconductor layer are stacked is formed;forming a second photoelectric conversion layer comprising a non-single-crystal semiconductor layer over the first photoelectric conversion layer;forming a second electrode over the second photoelectric conversion layer;selectively etching the second electrode, the second photoelectric conversion layer and the first photoelectric conversion layer at the space between the plurality of stacked bodies adjacent to each other to partially expose the first electrode of each of the plurality of stacked bodies, whereby a plurality of photoelectric conversion cells are arranged over the base substrate with an interval therebetween; andforming a plurality of connecting electrodes wherein each of the plurality of connecting electrodes connects two of the plurality of photoelectric conversion cells adjacent to each other and is in contact with an upper surface of the second electrode of one of the two of the plurality of photoelectric conversion cells and an exposed upper surface of the first electrode of the other of the two of the plurality of photoelectric conversion cells. 2. The method according to claim 1, wherein the second single-crystal semiconductor layer is single-crystallized. 3. The method according to claim 1, wherein the second single-crystal semiconductor layer is formed by heat treatment after the non-single-crystal semiconductor layer is formed. 4. The method according to claim 1, wherein the second single-crystal semiconductor layer includes a semiconductor film formed by a plasma CVD method. 5. The method according to claim 1, wherein the embrittlement layer is formed by introducing hydrogen, helium or halogen into the inside of each of the plurality of single-crystal semiconductor substrates. 6. The method according to claim 1, wherein the embrittlement layer is formed by scanning with a laser beam that allows multiphoton absorption, while a focal point of the laser beam is focused inside each of the plurality of single-crystal semiconductor substrates. 7. The method according to claim 1, wherein the base substrate is a glass substrate. 8. The method according to claim 1, wherein the first conductivity type is an n-type, and the second conductivity type is a p-type. 9. The method according to claim 1, wherein the second photoelectric conversion layer is formed by stacking a third impurity semiconductor layer having the first conductivity type, the non-single-crystal semiconductor layer and a fourth impurity semiconductor layer having the second conductivity type sequentially over the first photoelectric conversion layer. 10. A method for manufacturing a photoelectric conversion device module, comprising: preparing a plurality of single-crystal semiconductor substrates, wherein each of the plurality of single-crystal semiconductor substrates has a first electrode over one surface thereof and an embrittlement layer therein;attaching the plurality of single-crystal semiconductor substrates to a base substrate provided with an insulating layer with the first electrode therebetween, and bonding the insulating layer and the first electrode by ultrasonic wave bonding, wherein the plurality of single-crystal semiconductor substrates are arranged over the base substrate with an interval therebetween;separating each of the plurality of single-crystal semiconductor substrates at the embrittlement layer as a boundary, whereby a plurality of stacked bodies in which the first electrode and a first single-crystal semiconductor layer having a first conductivity type are stacked sequentially are formed over the base substrate provided with the insulating layer;forming a second single-crystal semiconductor layer over the plurality of stacked bodies so as to cover the plurality of stacked bodies and a space between the plurality of stacked bodies adjacent to each other;forming a second impurity semiconductor layer having a second conductivity type opposite to the first conductivity type over the second single-crystal semiconductor layer so that a first photoelectric conversion layer in which the first single-crystal semiconductor layer, the second single-crystal semiconductor layer and the second impurity semiconductor layer are stacked is formed;forming a second photoelectric conversion layer comprising a non-single-crystal semiconductor layer over the first photoelectric conversion layer;forming a second electrode over the second photoelectric conversion layer;selectively etching the second electrode, the second photoelectric conversion layer and the first photoelectric conversion layer at the space between the plurality of stacked bodies adjacent to each other to partially expose the first electrode of each of the plurality of stacked bodies, whereby a plurality of photoelectric conversion cells are arranged over the base substrate with an interval therebetween; andforming a plurality of connecting electrodes wherein each of the plurality of connecting electrodes connects two of the plurality of photoelectric conversion cells adjacent to each other and is in contact with an upper surface of the second electrode of one of the two of the plurality of photoelectric conversion cells and an exposed upper surface of the first electrode of the other of the two of the plurality of photoelectric conversion cells. 11. The method according to claim 10, wherein the first electrode includes aluminum, andwherein the insulating layer includes a silicon nitride layer, a silicon nitride oxide layer, or a silicon oxynitride layer. 12. The method according to claim 10, wherein the second single-crystal semiconductor layer is single-crystallized. 13. The method according to claim 10, wherein the second single-crystal semiconductor layer is formed by heat treatment after the non-single-crystal semiconductor layer is formed. 14. The method according to claim 10, wherein the second single-crystal semiconductor layer includes a semiconductor film formed by a plasma CVD method. 15. The method according to claim 10, wherein the embrittlement layer is formed by introducing hydrogen, helium or halogen into the inside of each of the plurality of single-crystal semiconductor substrates. 16. The method according to claim 10, wherein the embrittlement layer is formed by scanning with a laser beam that allows multiphoton absorption, while a focal point of the laser beam is focused inside each of the plurality of single-crystal semiconductor substrates. 17. The method according to claim 10, wherein the base substrate is a glass substrate. 18. The method according to claim 10, wherein the first conductivity type is an n-type, and the second conductivity type is a p-type. 19. The method according to claim 10, wherein the second photoelectric conversion layer is formed by stacking a third impurity semiconductor layer having the first conductivity type, the non-single-crystal semiconductor layer and a fourth impurity semiconductor layer having the second conductivity type sequentially over the first photoelectric conversion layer.
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