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Methods and systems for depositing a film on a substrate are disclosed. In one embodiment, a method includes converting a non-gaseous precursor into vapor phase. Converting the precursor includes: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality

Methods and systems for depositing a film on a substrate are disclosed. In one embodiment, a method includes converting a non-gaseous precursor into vapor phase. Converting the precursor includes: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles, and converting the phase of the non-gaseous precursor into vapor phase in the fluidized bed. The method also includes transferring the precursor in vapor phase through a passage; and performing deposition on one or more substrates with the transferred precursor in vapor phase.

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1. A method of depositing a film on a substrate, the method comprising: providing one or more substrates in a vapor deposition reactor;converting a non-gaseous precursor into vapor phase, wherein converting the precursor comprises: forming a fluidized bed by flowing gas at a sufficiently high flow r

1. A method of depositing a film on a substrate, the method comprising: providing one or more substrates in a vapor deposition reactor;converting a non-gaseous precursor into vapor phase, wherein converting the precursor comprises: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles, wherein the fluidized bed is separate from the vapor deposition reactor,providing the non-gaseous precursor as a liquid precursor and/or a solid precursor to the fluid bed; andvaporizing the non-gaseous precursor in the fluidized bed;transferring the precursor in vapor phase from the fluidized bed to the vapor deposition reactor through a passage; andperforming deposition in the vapor deposition reactor on the one or more substrates with the transferred precursor in vapor phase. 2. The method of claim 1, wherein the solid particles comprise inert solid particles, and wherein the non-gaseous precursor is provided as a liquid precursor to the fluidized bed. 3. The method of claim 1, wherein providing the non-gaseous precursor comprises providing the non-gaseous precursor as a solid precursor, wherein the solid particles comprise inert solid particles and particles of the non-gaseous precursor, and wherein vaporizing the non-gaseous precursor further comprises subliming at least a portion of the particles of the non-gaseous precursor. 4. The method of claim 1, wherein providing the non-gaseous precursor comprises providing the non-gaseous precursor as a solid precursor, wherein the solid particles comprise a plurality of particles of the non-gaseous precursor, and wherein vaporizing the non-gaseous precursor comprises subliming at least a portion of the plurality of particles. 5. The method of claim 1, wherein the solid particles comprise inert granules coated with a solid form of the non-gaseous precursor, and wherein vaporizing the non-gaseous precursor comprises subliming at least a portion of the non-gaseous precursor coated on the inert granules. 6. The method of claim 5, further comprising coating the inert granules with the non-gaseous precursor, wherein coating the inert granules comprises forming a fluidized bed with the inert granules and condensing a vapor of the non-gaseous precursor onto the inert granules. 7. The method of claim 6, further comprising discharging the inert granules after vaporizing the non-gaseous precursor; and reusing the inert granules for vaporizing the non-gaseous precursor after coating the inert granules with the non-gaseous precursor. 8. The method of claim 1, wherein at least a portion of the solid particles comprises the non-gaseous precursor in a solid form, and wherein the method further comprises recharging the solid particles to form the fluidized bed. 9. The method of claim 8, wherein recharging the solid particles comprises entraining and carrying the solid particles with a gas. 10. The method of claim 1, wherein performing the deposition comprises performing chemical vapor deposition or atomic layer deposition. 11. The method of claim 1, further comprising circulating the precursor in the gas phase in a loop formed partly by the fluidized bed before performing the deposition. 12. The method of claim 1, wherein the non-gaseous precursor comprises a mixture of two or more precursors with substantially equal vapor pressures.