Method for manufacturing semiconductor substrate
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/30
H01L-021/46
출원번호
US-0426305
(2009-04-20)
등록번호
US-8349702
(2013-01-08)
우선권정보
JP-2008-113320 (2008-04-24)
발명자
/ 주소
Kato, Sho
Toriumi, Satoshi
Isaka, Fumito
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
1인용 특허 :
6
초록▼
A semiconductor substrate is provided by a method suitable for mass production. Further, a semiconductor substrate having an excellent characteristic with effective use of resources is provided. A single crystal semiconductor substrate is irradiated with ions to form a damaged region in the single c
A semiconductor substrate is provided by a method suitable for mass production. Further, a semiconductor substrate having an excellent characteristic with effective use of resources is provided. A single crystal semiconductor substrate is irradiated with ions to form a damaged region in the single crystal semiconductor substrate; an insulating layer is formed over the single crystal semiconductor substrate; the insulating layer and a supporting substrate are bonded to each other; a first single crystal semiconductor layer is formed over the supporting substrate by partially separating the single crystal semiconductor substrate at the damaged region; a first semiconductor layer is formed over the first single crystal semiconductor layer; a second semiconductor layer is formed over the first semiconductor layer with a different condition from that used for forming the first semiconductor layer; a second single crystal semiconductor layer is formed by improving crystallinity of the first and the second semiconductor layers.
대표청구항▼
1. A method for manufacturing a semiconductor substrate, comprising: irradiating a single crystal semiconductor substrate with ions to form a damaged region in the single crystal semiconductor substrate;forming an insulating layer over the single crystal semiconductor substrate;bonding the insulatin
1. A method for manufacturing a semiconductor substrate, comprising: irradiating a single crystal semiconductor substrate with ions to form a damaged region in the single crystal semiconductor substrate;forming an insulating layer over the single crystal semiconductor substrate;bonding the insulating layer and a supporting substrate to each other;separating the single crystal semiconductor substrate at the damaged region to form a first single crystal semiconductor layer over the supporting substrate;forming a first semiconductor layer over the first single crystal semiconductor layer;forming a second semiconductor layer over the first semiconductor layer with a different condition from that used for forming the first semiconductor layer so that hydrogen concentration of the second semiconductor layer is higher than that of the first semiconductor layer; andimproving crystallinity of the first semiconductor layer and the second semiconductor layer by a solid-phase growth to form a second single crystal semiconductor layer,wherein the first semiconductor layer and the second semiconductor layer are formed so that the crystallinity of the first semiconductor layer is higher than that of the second semiconductor layer. 2. The method for manufacturing a semiconductor substrate according to claim 1, wherein the first semiconductor layer is formed to have a thickness of from 10 nm to 50 nm inclusive, and the second semiconductor layer is formed to have a thickness of 300 nm or more. 3. The method for manufacturing a semiconductor substrate according to claim 1, wherein ions generated from a source gas containing hydrogen are used as the ions. 4. The method for manufacturing a semiconductor substrate according to claim 1, wherein the first semiconductor layer is formed by a plasma CVD in which a flow rate of a hydrogen gas is 50 times or more as high as that of a silane based gas. 5. The method for manufacturing a semiconductor substrate according to claim 1, wherein the method further comprises forming a layer including a conductive material or a semiconductor layer including an impurity element over the single crystal semiconductor substrate before the step of forming the insulating layer over the single crystal semiconductor substrate. 6. A method for manufacturing a semiconductor substrate, comprising: irradiating a single crystal semiconductor substrate with ions to form a damaged region in the single crystal semiconductor substrate;forming an insulating layer over a supporting substrate;bonding the single crystal semiconductor substrate and the insulating layer to each other;separating the single crystal semiconductor substrate at the damaged region to form a first single crystal semiconductor layer over the supporting substrate;forming a first semiconductor layer over the first single crystal semiconductor layer;forming a second semiconductor layer over the first semiconductor layer with a different condition from that used for forming the first semiconductor layer so that hydrogen concentration of the second semiconductor layer is higher than that of the first semiconductor layer; andimproving crystallinity of the first semiconductor layer and the second semiconductor layer by a solid-phase growth method to form a second single crystal semiconductor layer,wherein the first semiconductor layer and the second semiconductor layer are formed so that the crystallinity of the first semiconductor layer is higher than that of the second semiconductor layer. 7. The method for manufacturing a semiconductor substrate according to claim 6, wherein the first semiconductor layer is formed to have a thickness of from 10 nm to 50 nm inclusive, and the second semiconductor layer is formed to have a thickness of 300 nm or more. 8. The method for manufacturing a semiconductor substrate according to claim 6, wherein ions generated from a source gas containing hydrogen are used as the ions. 9. The method for manufacturing a semiconductor substrate according to claim 6, wherein the first semiconductor layer is formed by a plasma CVD in which a flow rate of a hydrogen gas is 50 times or more as high as that of a silane based gas. 10. The method for manufacturing a semiconductor substrate according to claim 6, wherein the method further comprises forming a layer including a conductive material or a semiconductor layer including an impurity element over the single crystal semiconductor substrate before the step of forming the insulating layer over the supporting substrate or the step of bonding the single crystal semiconductor substrate and the insulating layer to each other. 11. A method for manufacturing a semiconductor substrate, comprising: irradiating a single crystal semiconductor substrate with ions to form a damaged region in the single crystal semiconductor substrate;forming an insulating layer over the single crystal semiconductor substrate;bonding the insulating layer and a supporting substrate to each other;separating the single crystal semiconductor substrate at the damaged region to form a first single crystal semiconductor layer over the supporting substrate;forming a first semiconductor layer with a first thickness over the first single crystal semiconductor layer, the first semiconductor layer having a first crystallinity;forming a second semiconductor layer with a second thickness over the first semiconductor layer, the second semiconductor layer having a second crystallinity lower than the first crystallinity, the second thickness greater than the first thickness; andperforming heat treatment so that the first crystallinity of the first semiconductor layer and the second crystallinity of the second semiconductor layer are improved. 12. The method for manufacturing a semiconductor substrate according to claim 11, wherein ions generated from a source gas containing hydrogen are used as the ions. 13. The method according to claim 11, wherein the first semiconductor layer is formed by plasma CVD. 14. The method according to claim 11, wherein the first semiconductor layer is epitaxially formed over the first single crystal semiconductor layer. 15. The method according to claim 11, wherein the second semiconductor layer is formed by plasma CVD. 16. The method according to claim 11, wherein a second single crystal semiconductor layer is formed by the heat treatment. 17. The method according to claim 11, wherein the heat treatment is performed by rapid thermal anneal. 18. The method according to claim 11, wherein the first thickness of the first semiconductor layer is 100 nm or less and the second thickness of the second semiconductor layer is 200 nm or larger. 19. A method for manufacturing a semiconductor substrate, comprising: irradiating a single crystal semiconductor substrate with ions to form a damaged region in the single crystal semiconductor substrate,forming an insulating layer over a supporting substrate;bonding the single crystal semiconductor substrate and the insulating layer to each other;separating the single crystal semiconductor substrate at the damaged region to form a first single crystal semiconductor layer over the supporting substrate;forming a first semiconductor layer with a first thickness over the first single crystal semiconductor layer, the first semiconductor layer having a first crystallinity;forming a second semiconductor layer with a second thickness over the first semiconductor layer, the second semiconductor layer having a second crystallinity lower than the first crystallinity, the second thickness greater than the first thickness; andperforming heat treatment so that the first crystallinity of the first semiconductor layer and the second crystallinity of the second semiconductor layer are improved. 20. The method for manufacturing a semiconductor substrate according to claim 19, wherein ions generated from a source gas containing hydrogen are used as the ions. 21. The method according to claim 19, wherein the first semiconductor layer is formed by plasma CVD. 22. The method according to claim 19, wherein the first semiconductor layer is epitaxially formed over the first single crystal semiconductor layer. 23. The method according to claim 19, wherein the second semiconductor layer is formed by plasma CVD. 24. The method according to claim 19, wherein a second single crystal semiconductor layer is formed by the heat treatment. 25. The method according to claim 19, wherein the heat treatment is performed by rapid thermal anneal. 26. The method according to claim 19, wherein the first thickness of the first semiconductor layer is 100 nm or less and the second thickness of the second semiconductor layer is 200 nm or larger. 27. A method for manufacturing a semiconductor substrate, comprising: irradiating a single crystal semiconductor substrate with ions to form a damaged region in the single crystal semiconductor substrate;forming an insulating layer over the single crystal semiconductor substrate;bonding the insulating layer and a supporting substrate to each other;separating the single crystal semiconductor substrate at the damaged region to form a first single crystal semiconductor layer over the supporting substrate;forming a first semiconductor layer over the first single crystal semiconductor layer, the first semiconductor layer having a first crystallinity;forming a second semiconductor layer over the first semiconductor layer, the second semiconductor layer having a second crystallinity lower than the first crystallinity; andperforming heat treatment so that the first crystallinity of the first semiconductor layer and the second crystallinity of the second semiconductor layer are improved. 28. The method for manufacturing a semiconductor substrate according to claim 27, wherein ions generated from a source gas containing hydrogen are used as the ions. 29. The method according to claim 27, wherein the first semiconductor layer is formed by plasma CVD. 30. The method according to claim 27, wherein the first semiconductor layer is epitaxially formed over the first single crystal semiconductor layer. 31. The method according to claim 27, wherein the second semiconductor layer is formed by plasma CVD. 32. The method according to claim 27, wherein a second single crystal semiconductor layer is formed by the heat treatment. 33. The method according to claim 27, wherein the heat treatment is performed by rapid thermal anneal. 34. The method according to claim 27, wherein a thickness of the second semiconductor layer is greater than a thickness of the first semiconductor layer. 35. A method for manufacturing a semiconductor substrate, comprising: irradiating a single crystal semiconductor substrate with ions to form a damaged region in the single crystal semiconductor substrate,forming an insulating layer over a supporting substrate;bonding the single crystal semiconductor substrate and the insulating layer to each other;separating the single crystal semiconductor substrate at the damaged region to form a first single crystal semiconductor layer over the supporting substrate;forming a first semiconductor layer over the first single crystal semiconductor layer, the first semiconductor layer having a first crystallinity;forming a second semiconductor layer over the first semiconductor layer, the second semiconductor layer having a second crystallinity lower than the first crystallinity; andperforming heat treatment so that the first crystallinity of the first semiconductor layer and the second crystallinity of the second semiconductor layer are improved. 36. The method for manufacturing a semiconductor substrate according to claim 35, wherein ions generated from a source gas containing hydrogen are used as the ions. 37. The method according to claim 35, wherein the first semiconductor layer is formed by plasma CVD. 38. The method according to claim 35, wherein the first semiconductor layer is epitaxially formed over the first single crystal semiconductor layer. 39. The method according to claim 35, wherein the second semiconductor layer is formed by plasma CVD. 40. The method according to claim 35, wherein a second single crystal semiconductor layer is formed by the heat treatment. 41. The method according to claim 35, wherein the heat treatment is performed by rapid thermal anneal. 42. The method according to claim 35, wherein a thickness of the second semiconductor layer is greater than a thickness of the first semiconductor layer.
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