IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0546812
(2009-08-25)
|
등록번호 |
US-8349739
(2013-01-08)
|
발명자
/ 주소 |
|
출원인 / 주소 |
- Taiwan Semiconductor Manufacturing Company, Ltd.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
1 인용 특허 :
5 |
초록
▼
The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and rem
The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and removing the resist pattern.
대표청구항
▼
1. A method for etching a semiconductor substrate comprising: forming a photoresist pattern on the semiconductor substrate;applying an etching chemical fluid to the semiconductor substrate, wherein the etching chemical fluid includes a diffusion control material, the diffusion control material inclu
1. A method for etching a semiconductor substrate comprising: forming a photoresist pattern on the semiconductor substrate;applying an etching chemical fluid to the semiconductor substrate, wherein the etching chemical fluid includes a diffusion control material, the diffusion control material including PAG;removing the etching chemical fluid; andremoving the photoresist resist pattern. 2. The method of claim 1, wherein the diffusion control material comprises a polymeric material with chemical additive. 3. The method of claim 1, wherein the diffusion control material comprises a polymeric material with an acid molecular additive selected from the group consisting of PAG, PFOS, PFBS, perfluoroalkyl sulfonate, HCl, HF, H2SO4, HNO3 and CH3COOH. 4. The method of claim 1, wherein the diffusion control material comprises one of polymer, solvent and additive. 5. The method of claim 1, wherein the substrate comprises a material layer selected from the group consisting of LaxOy, HfxOy, AlxOy, TixOy, TixNy, TaN, W, WxOy, Ti, Al and an inorganic substrate selected from the group consisting of Si, SiO2, Si3N4, SOG, PSG, BSG and BPSG. 6. The method of claim 1, wherein the forming of the resist pattern further comprises heating the substrate during a resist coating process. 7. The method of claim 6, wherein the heating of the substrate comprises heating the substrate to a temperature below about 120 C. 8. The method of claim 1, wherein the forming of the resist pattern further comprises heating the substrate after a resist coating process. 9. The method of claim 1, further comprising heating the etching chemical fluid occurs while applying the etching chemical fluid to the semiconductor substrate. 10. The method of claim 1, wherein heating the etching chemical fluid on the semiconductor substrate includes heating the chemical fluid up to about 120° C. 11. The method of claim 1, further comprising after applying the etching chemical fluid, heating the etching chemical fluid on the semiconductor substrate. 12. The method of claim 1, wherein applying an etching chemical fluid to the semiconductor substrate includes performing a wet etch process. 13. The method of claim 1, wherein the substrate includes a LaxOy layer and the applying of the etching chemical fluid to the semiconductor substrate includes etching the LaxOy layer. 14. A method for etching a substrate comprising: forming a resist pattern on a semiconductor substrate having a high k dielectric material layer and a metal layer on the high k dielectric material layer;applying an etching chemical fluid to the metal layer, wherein the etching chemical fluid includes an additive to increase viscosity of the etching chemical fluid, wherein the additive is PAG;after applying the etching chemical fluid, heating the etching chemical fluid on the semiconductor substrate;removing the etching chemical fluid; andremoving the resist pattern. 15. The method of claim 14, wherein the etching chemical fluid comprises at least one of polymer, solvent, and the additive. 16. The method of claim 15, wherein the solvent comprises one of organic solvent and DI water. 17. The method of claim 15, wherein the additive comprises at least one of acid compound, base compound and nitrogen compound. 18. The method of claim 15, wherein the polymer comprises acid polymer or nitrogen polymer. 19. The method of claim 14, wherein the high k dielectric material is LaxOy. 20. The method of claim 14, wherein the etching chemical fluid comprises at least one of polymer, solvent, and additive.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.