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Methods for selectively depositing high quality epitaxial material include introducing pulses of a silicon-source containing vapor while maintaining a continuous etchant flow. Epitaxial material is deposited on areas of a substrate, such as source and drain recesses. Between pulses, the etchant flow

Methods for selectively depositing high quality epitaxial material include introducing pulses of a silicon-source containing vapor while maintaining a continuous etchant flow. Epitaxial material is deposited on areas of a substrate, such as source and drain recesses. Between pulses, the etchant flow continues such that lower quality epitaxial material may be removed, as well as any non-epitaxial material that may have been deposited. The pulse of silicon-source containing vapor may be repeated until a desired thickness of epitaxial material is selectively achieved in semiconductor windows, such as recessed source/drain regions.

대표청구항 ▼

1. A method for selectively forming silicon-containing material in a recess, comprising: providing a substrate, the substrate including a recess and insulating surfaces;introducing a pulse of a silicon-containing source vapor to deposit silicon-containing material in the recess;introducing a continu

1. A method for selectively forming silicon-containing material in a recess, comprising: providing a substrate, the substrate including a recess and insulating surfaces;introducing a pulse of a silicon-containing source vapor to deposit silicon-containing material in the recess;introducing a continuous etchant flow of one or more vapor-phase etchants to remove portions of the deposited silicon-containing material from the recess; andunder isobaric conditions, repeating pulses of the silicon-containing source vapor during the continuous etchant flow to selectively form the silicon-containing material in the recess. 2. The method of claim 1, wherein introducing a pulse of a silicon-containing source vapor is conducted between 2.4 and 12 seconds. 3. The method of claim 1, wherein introducing a pulse of a silicon-containing source vapor is conducted between 20 and 100 times. 4. The method of claim 1, wherein the silicon-containing source vapor is selected from Si3H8, Si2H6, Si2H5Cl, Si2H4Cl2, or 2,2-Si3H6Cl2. 5. The method of claim 1, wherein the silicon-containing source has a flow rate between 50 and 200 sccm. 6. The method of claim 1, wherein the one or more vapor-phase etchants are introduced continuously for between 2.4 and 30 seconds. 7. The method of claim 1, further comprising using a H2 carrier gas during the continuous etchant flow. 8. The method of claim 7, wherein the H2 flow rate is between 1 slm and 20 slm. 9. The method of claim 1, wherein the etchant is Cl2. 10. The method of claim 9, wherein the Cl2 flow rate is between 5 sccm and 200 sccm. 11. The method of claim 1, wherein the vapor-phase etchant flow rate is held constant. 12. The method of claim 1, wherein the deposition caused by each pulse of silicon-containing vapor results in no deposition on the insulating surfaces. 13. The method of claim 1, wherein the continuous etchant flow results in removal of deposited silicon-containing material from recess sidewalls in between pulses of the silicon-containing source vapor. 14. The method of claim 1, wherein repeating pulses of the silicon-containing vapor results in a bottom-up growth of an epitaxial layer. 15. The method of claim 14, wherein the bottom-up growth of the epitaxial layer is between 1 nm and 3 nm per pulse.