IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0600539
(2008-05-21)
|
등록번호 |
US-8372305
(2013-02-12)
|
우선권정보 |
EP-07108798 (2007-05-24) |
국제출원번호 |
PCT/EP2008/056230
(2008-05-21)
|
§371/§102 date |
20091117
(20091117)
|
국제공개번호 |
WO2008/142093
(2008-11-27)
|
발명자
/ 주소 |
- Schubert, Markus
- Thate, Sven
|
출원인 / 주소 |
|
인용정보 |
피인용 횟수 :
1 인용 특허 :
6 |
초록
▼
The present invention relates to compositions for chemical-mechanical polishing comprising A 0.01% to 40% by weight based on the total amount of the composition of abrasive particles of at least one porous metal-organic framework material, wherein the framework material comprises at least one at lea
The present invention relates to compositions for chemical-mechanical polishing comprising A 0.01% to 40% by weight based on the total amount of the composition of abrasive particles of at least one porous metal-organic framework material, wherein the framework material comprises at least one at least bidentate organic compound which is coordinately bound to at least one metal ion; B 40% to 99.8% by weight based on the total amount of the composition of a liquid carrier; and C 0.01% to 20% by weight based on the total amount of the composition of a polishing additive component. The invention further relates to the use of said composition as well as methods for chemical-mechanical polishing of a surface with the aid of said compositions.
대표청구항
▼
1. A composition, comprising A from 0.01% to 40% by weight, based on a total amount of the composition, of abrasive particles of a porous metal-organic framework material, wherein the framework material comprises an at least bi-dentate organic compound coordinately bound to a metal ion;B from 40% to
1. A composition, comprising A from 0.01% to 40% by weight, based on a total amount of the composition, of abrasive particles of a porous metal-organic framework material, wherein the framework material comprises an at least bi-dentate organic compound coordinately bound to a metal ion;B from 40% to 99.8% by weight, based on the total amount of the composition, of a liquid carrier; andC from 0.01% to 20% by weight, based on the total amount of the composition, of a polishing additive component. 2. The composition according to claim 1, wherein the polishing additive component comprises at least one additive selected from the group consisting of an oxidizer, a pH regulator, a stabilizer, a complexing agent, a corrosion inhibitor, a bioactive agent and a surface protecting agent. 3. The composition according to claim 1, wherein the composition comprises the components A, B, and C, based of the total weight of the composition, of A from 0.1% to 30% by weight,B from 75% to 99% by weight, andC from 0.1% to 15% by weight. 4. The composition according to claim 1, wherein the abrasive particles have a diameter d50 of less than 2 μm. 5. The composition according to claim 1, wherein the metal ion is at least one metal ion selected from the group consisting of Mg, Ca, Al, In, Cu, Ta, Zn, Y, Sc, a lanthanide, Zr, Ti, Mn, Fe, Ni, and Co. 6. The composition according to claim 1, wherein the at least bidentate organic compound is obtained by a bi-, tri-, or tetracarboxylic acid or by a monocyclic, bicyclic, or polycyclic ring system obtained by at least one heterocycle selected from the group consisting of pyrrole, alpha-pyridone, and gamma-pyridone, andthe at least bidentate organic compound has at least two ring nitrogens. 7. The composition according to claim 1, wherein the polishing additive component comprises an oxidizer selected from the group consisting of a peroxide, iodine, ferric nitrate, and a hypochlorite. 8. The composition according to claim 1, wherein the liquid carrier comprises water. 9. The composition according to claim 8, wherein water is present in an amount of from 0.01% to 100% by weight based on the total weight of the liquid carrier. 10. A method comprising chemical-mechanically polishing or electrochemical-mechanically polishing a surface with the composition according to claim 1, wherein the polishing comprises: (a) contacting the surface with the composition according to claim 1 having a first pH value and,(b) polishing the surface. 11. The method according to claim 10, wherein the polishing further comprises: (c) changing the first pH value to a second pH value. 12. The method according to claim 10, wherein the surface is a metal surface, a glass, Si, Si oxide, Si nitride, Ti nitride, or an organic polymer surface. 13. The method according to claim 12, wherein the metal of the metal surface comprises Cu, Mo, W, Ta, Ru, Pt, Ag, Au, Al, Ti or a mixture or alloy thereof. 14. The method according to claim 12, wherein the metal surface is a surface of an integrated circuit chip. 15. The method according to claim 12, wherein the surface is conducting.
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