IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0485282
(2009-06-16)
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등록번호 |
US-8377322
(2013-02-19)
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우선권정보 |
JP-2008-156453 (2008-06-16) |
발명자
/ 주소 |
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출원인 / 주소 |
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인용정보 |
피인용 횟수 :
0 인용 특허 :
4 |
초록
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To provide a pattern forming method including: providing an active species supply source to at least one of a mold structure having a plurality of concave portions in its surface, and an object to be patterned; pressing the side of the mold structure, where the concave portions are provided, against
To provide a pattern forming method including: providing an active species supply source to at least one of a mold structure having a plurality of concave portions in its surface, and an object to be patterned; pressing the side of the mold structure, where the concave portions are provided, against the object so as to encapsulate the active species supply source in the concave portions; and oxidatively decomposing parts of the object which are in positions corresponding to the concave portions, by irradiating the active species supply source with excitation light through one of the mold structure and the object.
대표청구항
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1. A pattern forming method comprising: providing an active species supply source to at least one of a mold structure having a plurality of concave portions in its surface, and an object to be patterned,pressing a side of the mold structure, where the concave portions are provided, against the objec
1. A pattern forming method comprising: providing an active species supply source to at least one of a mold structure having a plurality of concave portions in its surface, and an object to be patterned,pressing a side of the mold structure, where the concave portions are provided, against the object so as to encapsulate the active species supply source in the concave portions,irradiating the active species supply source encapsulated in the concave portions with excitation light through one of the mold structure and the object to generate an active oxygen species, andoxidatively decomposing parts of the object which are in positions corresponding to the concave portions. 2. The pattern forming method according to claim 1, wherein the mold structure is made of one of quartz and a transparent resin. 3. The pattern forming method according to claim 1, wherein the active species supply source is one of water and hydrogen peroxide. 4. The pattern forming method according to claim 1, wherein the excitation light is an ultraviolet ray. 5. The pattern forming method according to claim 1, wherein the active oxygen species is one or more of superoxide anion radicals, hydroxyl radicals, hydrogen peroxide and singlet oxygen. 6. The pattern forming method according to claim 1, wherein the excitation light has a wavelength of 184.9 nm or 253.7 nm. 7. The pattern forming method according to claim 1, wherein the excitation light is generated from a low pressure mercury vapor lamp, a high pressure mercury vapor lamp or an excimer lamp. 8. The pattern forming method according to claim 1, wherein the excitation light is applied at an irradiation intensity of 30 mW/cm2 for 1-30 minutes. 9. The pattern forming method according to claim 1, wherein at least a surface of the object comprises an organic material. 10. The pattern forming method according to claim 9, wherein the organic material comprises at least one of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), low-melting-point fluorine resin, polymethyl methacrylate (PMMA) and triacetate cellulose (TAC). 11. The pattern forming method according to claim 1, wherein the object comprises a substrate, and an organic thin film formed on a surface of the substrate. 12. The pattern forming method according to claim 11, wherein the organic thin film on the substrate comprises at least one of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), low-melting-point fluorine resin, polymethyl methacrylate (PMMA) and triacetate cellulose (TAC). 13. A substrate processing method comprising: forming an organic thin film pattern on a surface of a substrate by a pattern forming method that comprises: providing an active species supply source to at least one of a mold structure having a plurality of concave portions in its surface, and an object to be patterned, the object comprising the substrate and an organic thin film formed on a surface of the substrate,pressing a side of the mold structure, where the concave portions are provided, against the object so as to encapsulate the active species supply source in the concave portions,irradiating the active species supply source encapsulated in the concave portions with excitation light through one of the mold structure and the object to generate an active oxygen species, andoxidatively decomposing parts of the object which are in positions corresponding to the concave portions, andetching the substrate while the organic thin film pattern formed on the surface of the substrate serves as a mask. 14. The substrate processing method according to claim 13, wherein the active oxygen species is one or more of superoxide anion radicals, hydroxyl radicals, hydrogen peroxide and singlet oxygen. 15. The substrate processing method according to claim 13, comprising: providing an object comprising a quartz substrate having on its surface a PMMA thin film;applying water onto the PMMA thin film;pressing a side of the mold structure where the concave portions are provided against the PMMA thin film so as to encapsulate the water in the concave portions;irradiating ultraviolet light through the mold structure and to the water encapsulated in the concave portions to generate the active oxygen species;oxidatively decomposing parts of the object that are in positions corresponding to the concave portions to form a film pattern on the surface of the substrate; and dry-etching the substrate, wherein the film pattern on the surface of the substrate serves as a mask. 16. The substrate processing method according to claim 13, comprising: providing an object comprising a quartz substrate having on its surface a PMMA thin film;applying hydrogen peroxide onto the PMMA thin film;pressing a side of the mold structure where the concave portions are provided against the PMMA thin film so as to encapsulate the hydrogen peroxide in the concave portions;irradiating ultraviolet light through the mold structure and to the hydrogen peroxide encapsulated in the concave portions to generate the active oxygen species;oxidatively decomposing parts of the object that are in positions corresponding to the concave portions to form a film pattern on the surface of the substrate; anddry-etching the substrate, wherein the film pattern on the surface of the substrate serves as a mask. 17. A mold structure replication method comprising: processing a substrate by a method which comprises: forming an organic thin film pattern on a surface of a substrate by a pattern forming method that comprises providing an active species supply source to at least one of a mold structure having a plurality of concave portions in its surface, and an object to be patterned, the object comprising the substrate and an organic thin film formed on a surface of the substrate,pressing a side of the mold structure, where the concave portions are provided, against the object so as to encapsulate the active species supply source in the concave portions, andoxidatively decomposing parts of the object which are in positions corresponding to the concave portions by irradiating the active species supply source with excitation light through one of the mold structure and the object to generate an active oxygen species, andetching the substrate while the organic thin film pattern formed on the surface of the substrate serves as a mask. 18. The mold structure replication method according to claim 17, wherein etching the substrate comprises wet etching with a combination of Si and a KOH aqueous solution, a combination of SiO2 and hydrofluoric acid solution, or a combination of a metal and a hydrochloric acid solution. 19. The mold structure replication method according to claim 17, wherein etching the substrate comprises dry etching by reactive ion etching or ion milling.
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