IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0843733
(2010-07-26)
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등록번호 |
US-8388774
(2013-03-05)
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발명자
/ 주소 |
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출원인 / 주소 |
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인용정보 |
피인용 횟수 :
0 인용 특허 :
30 |
초록
▼
A multi-wave thermal process for treating a metal to improve structural characteristics is herein disclosed. The metal can be placed in a chamber. Each wave of the process can include: selecting a target temperature; selecting a temperature rate; and controlling the temperature rate while chilling t
A multi-wave thermal process for treating a metal to improve structural characteristics is herein disclosed. The metal can be placed in a chamber. Each wave of the process can include: selecting a target temperature; selecting a temperature rate; and controlling the temperature rate while chilling the metal by introducing a cryogenic material into the chamber, while preventing over-stressing of the metal, to the target temperature at the temperature rate. While chilling the metal, the process can include inserting a hold time on the metal at an intermediate temperature for equalization of the temperature uniformly throughout the metal, thereby creating uniformity in a microcrystalline structure of the metal. The process can further include: stopping the introduction of the cryogenic material once the target temperature is reached and holding the metal at the target temperature. The process can result in a treated metal without fractures and with an organized microcrystalline structure.
대표청구항
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1. A multi-wave thermal process for treating a metal to improve at least one structural characteristic of the metal, the thermal process comprising: a. placing the metal with a metal temperature within a thermal control apparatus comprising a chamber with a chamber temperature;b. selecting a first t
1. A multi-wave thermal process for treating a metal to improve at least one structural characteristic of the metal, the thermal process comprising: a. placing the metal with a metal temperature within a thermal control apparatus comprising a chamber with a chamber temperature;b. selecting a first target temperature based on the metal, wherein the first target temperature ranges from −120 degrees Fahrenheit to −380 degrees Fahrenheit;c. selecting a first temperature rate based on the metal, a size of the metal, a mass of the metal or combinations thereof, wherein the first temperature rate ranges from 0.25 degrees Fahrenheit per minute to 20 degrees Fahrenheit per minute;d. controlling the first temperature rate while cryogenically chilling the metal by introducing a first cryogenic material into the thermal control apparatus to decrease the metal temperature, while preventing over-stressing of the metal, to the first target temperature at the first temperature rate, and while cryogenically chilling the metal to the first target temperature, inserting at least one stabilizing hold time from 30 seconds to 90 minutes on the metal at an first intermediate temperature for equalization of the metal temperature uniformly throughout the metal, thereby creating uniformity in a microcrystalline structure of the metal, wherein the at least one stabilizing hold time corresponds to the size of the metal, the metal temperature, a thermal conductivity of the metal, or combinations thereof;e. stopping the introduction of the first cryogenic material into the chamber once the first target temperature is reached and holding the metal at the first target temperature for at least two hours;f. selecting a second target temperature for the metal, wherein the second target temperate ranges from 0 degrees Fahrenheit to 1400 degrees Fahrenheit;g. selecting a second temperature rate, wherein the second temperature rate ranges from 0.25 degrees Fahrenheit per minute to 20 degrees Fahrenheit per minute;h. controlling the second temperature rate while heating the metal to the second target temperature;i. increasing the metal temperature to the second target temperature at the second temperature rate and holding the metal at the second target temperature for at least fifteen minutes;j. selecting a third target temperature for the metal, wherein the third target temperature ranges from −120 degrees Fahrenheit to −380 degrees Fahrenheit;k. selecting a third temperature rate, wherein the third temperature rate ranges from 0.25 degrees Fahrenheit per minute to 20 degrees Fahrenheit per minute;l. controlling the third temperature rate while cryogenically chilling the metal by introducing a second cryogenic material into the thermal control apparatus to decrease the metal temperature, while preventing over-stressing of the metal, to the third target temperature at the third temperature rate, and while cryogenically chilling the metal to the third target temperature, inserting at least one equalizing hold time from 1 minute to 2 hours on the metal at a second intermediate temperature for equalization of the metal temperature uniformly throughout the metal, thereby creating uniformity in the microcrystalline structure of the metal, wherein the at least one equalizing hold time corresponds to the size of the metal, the metal temperature, the thermal conductivity of the metal, or combinations thereof;m. stopping the introduction of the second cryogenic material into the chamber once the third target temperature is reached and holding the metal at the third target temperature for at least two hours;n. selecting a fourth target temperature for the metal, wherein the fourth target temperature ranges from 0 degrees Fahrenheit to 1400 degrees Fahrenheit;o. selecting a fourth temperature rate, wherein the fourth temperature rate ranges from 0.25 degrees Fahrenheit per minute to 20 degrees Fahrenheit per minute;p. controlling the fourth temperature rate while increasing the chamber temperature to the fourth target temperature; andq. increasing the metal temperature to the fourth target temperature at the fourth temperature rate and holding the metal at the fourth target temperature for at least fifteen minutes, resulting in a treated metal without fractures and with an organized microcrystalline structure. 2. The thermal process of claim 1, wherein the first temperature rate is different from the second temperature rate to create a first desired metallurgical feature in the treated metal, and wherein the first desired metallurgical feature is selected from the group consisting of: malleability, flexibility, ductility, hardness, elasticity, strength, and combinations thereof. 3. The thermal process of claim 1, wherein the first temperature rate is substantially the same as the second temperature rate. 4. The thermal process of claim 1, further comprising the steps of: r. cryogenically chilling the metal by introducing a third cryogenic material into the thermal control apparatus to decrease the metal temperature, while preventing over-stressing of the metal, to a fifth target temperature at a fifth temperature rate, and while cryogenically chilling the metal to the fifth target temperature, inserting at least one crystalline organizational hold time from 15 seconds to 2 hours on the metal at a third intermediate temperature for equalization of the metal temperature uniformly throughout the metal, thereby creating uniformity in the microcrystalline structure of the metal, wherein the at least one crystalline organizational hold time corresponds to the size of the metal, the metal temperature, the thermal conductivity of the metal, or combinations thereof;s. stopping the introduction of the third cryogenic material into the chamber once the fifth target temperature is reached;t. increasing the chamber temperature to a sixth target temperature; andu. increasing the metal temperature to the sixth target temperature at a sixth temperature rate, resulting in the treated metal without fractures. 5. The thermal process of claim 4, wherein the fifth temperature rate and the sixth temperature rate are determined by the thermal conductivity of the metal. 6. The thermal process of claim 4, further comprising repeating the steps of the process at least four times. 7. The thermal process of claim 4, further comprising using from one crystalline organizational hold time to six crystalline organizational hold times. 8. The thermal process of claim 1, further comprising holding the metal at the first target temperature for a time ranging from two hours to 96 hours. 9. The thermal process of claim 1, further comprising holding the metal at the second target temperature for a time ranging from fifteen minutes to 48 hours. 10. The thermal process of claim 1, further comprising repeating the thermal process to create a second desired metallurgical feature in the treated metal, wherein the second desired metallurgical feature is selected from the group consisting of: malleability, flexibility, ductility, hardness, elasticity, strength, and combinations thereof. 11. The thermal process of claim 1, wherein the thermal control apparatus further comprises a heat exchanger disposed in the chamber to provide a cryogenic vapor to the chamber. 12. The thermal process of claim 11, wherein the first cryogenic material and the second cryogenic material are both released into the heat exchanger, thereby absorbing heat from the chamber into the heat exchanger and forming a cryogenic vapor that fills the chamber. 13. The thermal process of claim 12, wherein the cryogenic vapor is a member of the group consisting of: hydrogen, nitrogen, oxygen, helium, argon, and combinations thereof. 14. The thermal process of the claim 1, wherein the chamber is selected from the group consisting of: a double-walled insulated chamber, a vacuum chamber, and a vacuum-insulated chamber. 15. The thermal process of claim 1, wherein the third target temperature is lower than the first target temperature. 16. The thermal process of claim 1, wherein the fourth target temperature is different from the second target temperature. 17. The thermal process of claim 1, further comprising using from one stabilizing hold time to ten stabilizing hold times. 18. The thermal process of claim 1, further comprising using from one equalizing hold time to eight equalizing hold times.
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