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A pressure sensor micromachined by using microelectronics technologies includes a cavity hermetically sealed on one side by a silicon substrate and on the other side by a diaphragm that is configured to be formed under the effect of the pressure outside the cavity. The sensor includes at least one r

A pressure sensor micromachined by using microelectronics technologies includes a cavity hermetically sealed on one side by a silicon substrate and on the other side by a diaphragm that is configured to be formed under the effect of the pressure outside the cavity. The sensor includes at least one resistance strain gage fastened to the diaphragm and has resistance that varies as a function of the deformation of the diaphragm. The diaphragm is fastened to the resistance strain gages. The gages are located inside the sealed cavity. The diaphragm has an insulting layer deposited on a sacrificial layer and may cover integrated measurement circuits in the silicon substrate.

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1. A pressure sensor produced in a microelectronics technology, comprising: a substrate carrying electrical elements;a layer deposited on a rigid part of the substrate, said layer being locally separated from the substrate to form a cavity between the substrate and the layer, said cavity being herme

1. A pressure sensor produced in a microelectronics technology, comprising: a substrate carrying electrical elements;a layer deposited on a rigid part of the substrate, said layer being locally separated from the substrate to form a cavity between the substrate and the layer, said cavity being hermetically sealed and said layer forming a diaphragm that is deformable under the effect of pressure outside the cavity; andat least one resistance strain gage fastened to the diaphragm and having a resistance that varies as a function of the deformation of the diaphragm,wherein the resistance strain gage is located inside the sealed cavity. 2. The pressure sensor as claimed in claim 1, wherein the cavity is located on top of the substrate, the substrate not being recessed to form the cavity or the diaphragm. 3. The pressure sensor as claimed in claim 2, wherein the cavity covers the major part of the measurement circuits associated with the strain gages. 4. The sensor as claimed in claim 2, wherein the diaphragm is made of silicon nitride. 5. The sensor as claimed in claim 2, wherein the diaphragm bears at least two, and preferably four, four resistance strain gages joined together in a four-resistor Wheatstone bridge. 6. The sensor as claimed in claim 2, wherein the strain gages are made of a nickel/copper/silicon alloy or a nickel/copper/manganese alloy. 7. The pressure sensor as claimed in claim 1, wherein measurement circuits associated with the strain gages are located within the cavity. 8. The sensor as claimed in claim 7, wherein the diaphragm is made of silicon nitride. 9. The sensor as claimed in claim 7, wherein the strain gages are made of a nickel/copper/silicon alloy or a nickel/copper/manganese alloy. 10. The sensor as claimed in claim 1, wherein the diaphragm is made of silicon nitride. 11. The sensor as claimed in claim 10, wherein the strain gages are made of a nickel/copper/silicon alloy or a nickel/copper/manganese alloy. 12. The sensor as claimed in claim 1, wherein the diaphragm bears at least four resistance strain gages joined together in a four-resistor Wheatstone bridge. 13. The sensor as claimed in claim 1, wherein the strain gages are made of a nickel/copper/silicon alloy or a nickel/copper/manganese alloy. 14. A process of manufacturing a strain-gage pressure sensor including a cavity sealed by a diaphragm, said process comprising: producing measurement electronic circuit elements on a rigid part of a planar substrate;depositing a sacrificial layer to define the volume of an empty cavity, andetching the sacrificial layer so as to leave an island of the sacrificial layer located above the electronic circuit elements;depositing a resistive layer on the sacrificial layer and etching resistance strain gages in the resistive layer;depositing, on the strain gages and on the sacrificial layer, at least one insulating layer that subsequently forms a self-supporting diaphragm fastened to the strain gages;etching said insulating layer so as to leave a diaphragm covering the entire sacrificial layer except at least an aperture at the point where the insulating layer is in contact with the sacrificial layer;attacking said sacrificial layer through the aperture by an etchant that does not attack the material of the resistance strain gages, so as to remove the totality of said sacrificial layer; anddeposition a plugging material, for filling up the aperture so as to hermetically seal the cavity. 15. The process as claimed in claim 14, wherein the deposition of the plugging material is carried out at low pressure so that the cavity then remains void of air. 16. The process as claimed in claim 15, wherein the material of the sacrificial layer is tungsten and the strain gages are made of a nickel/chromium/silicon alloy or a nickel/copper/manganese alloy. 17. The process as claimed in claim 15, wherein the material of the sacrificial layer is an organic polymer. 18. The process as claimed in claim 14, wherein the material of the sacrificial layer is tungsten and the strain gages are made of a nickel/chromium/silicon alloy or a nickel/copper/manganese alloy. 19. The process as claimed in claim 18, wherein the proportions of the alloy are about 0.5/0.4/0.1 in the case of nickel/chromium/silicon and about 0.55/0.44/0.01 in the case of copper/nickel/manganese. 20. The process as claimed in claim 14, wherein the material of the sacrificial layer is an organic polymer.