A method for manufacturing a liquid crystal device including the steps of: disposing a mixture including a liquid crystal material and a curable resin containing a reaction initiating agent between a pair of substrates wherein at least one of the pair of substrates has an orientation film in contact
A method for manufacturing a liquid crystal device including the steps of: disposing a mixture including a liquid crystal material and a curable resin containing a reaction initiating agent between a pair of substrates wherein at least one of the pair of substrates has an orientation film in contact with the mixture; orienting the liquid crystal material; and curing the resin in the mixture so that the resin is formed on a surface of the orientation film. The resin may be in the form of a film or grains. Also, the resin may be cured by ultraviolet light.
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1. A method for manufacturing a liquid crystal device comprising the steps of: disposing a mixture comprising a liquid crystal material and a curable resin containing a reaction initiating agent between a pair of substrates wherein at least one of the pair of substrates has an orientation film in co
1. A method for manufacturing a liquid crystal device comprising the steps of: disposing a mixture comprising a liquid crystal material and a curable resin containing a reaction initiating agent between a pair of substrates wherein at least one of the pair of substrates has an orientation film in contact with the mixture;orienting the liquid crystal material; andseparating the resin from the mixture to form a continuous layer of the liquid crystal material between the pair of substrates, wherein the resin is formed mainly on and in contact with a surface of the orientation film,wherein the continuous layer of the liquid crystal material covers an entire region of a pixel electrode, andwherein the resin is discontinuous on the surface of the orientation film. 2. The method of claim 1 wherein the curable resin includes a monomer at 40% weight or more. 3. The method of claim 1, wherein the curable resin includes a monomer at 60-90% weight. 4. The method of claim 1 wherein the curable resin includes a monomer and a concentration of the monomer with respect to the mixture is 2.0% weight or more. 5. The method of claim 1 wherein the liquid crystal material is a ferroelectric liquid crystal or an antiferroelectric liquid crystal. 6. The method of claim 1 wherein the resin formed on the surface of the orientation film restrains an orientation control force of the orientation film with respect to the liquid crystal material. 7. The method of claim 1 wherein the mixture is disposed between the pair of substrates after the pair of substrates are arranged so as to be opposed to each other. 8. The method of claim 1 further comprising a step of forming a plurality of thin film transistors on one of the pair of substrates. 9. The method according to claim 1, wherein the resin is formed only on the surface of the orientation film. 10. The method according to claim 1, further comprising a step of disposing a polarity plate on an outer surface of each of the pair of substrates. 11. The method of claim 1, further comprising a step of curing the resin after separating the resin from the mixture. 12. The method of claim 1, wherein the step of separating the resin from the mixture is performed after orienting the liquid crystal material. 13. A method for manufacturing a liquid crystal device comprising the steps of: disposing a mixture comprising a liquid crystal material and a curable resin containing a reaction initiating agent between a pair of substrates wherein at least one of the pair of substrates has an orientation film in contact with the mixture;orienting the liquid crystal material; andseparating the resin from the mixture to form a continuous layer of the liquid crystal material between the pair of substrates, wherein the resin is formed mainly on and in contact with a surface of the orientation film,wherein the continuous layer of the liquid crystal material covers an entire region of a pixel electrode andwherein the resin is discontinuous on the surface of the orientation film. 14. The method of claim 13, wherein the curable resin includes a monomer at 40% weight or more. 15. The method of claim 13, wherein the curable resin includes a monomer at 60-90% weight. 16. The method of claim 13, wherein the curable resin includes a monomer and a concentration of the monomer with respect to the mixture is 2.0% weight or more. 17. The method of claim 13, wherein the liquid crystal material is a ferroelectric liquid crystal or an antiferroelectric liquid crystal. 18. The method of claim 13, wherein the resin formed on the surface of the orientation film restrains an orientation control force of the orientation film with respect to the liquid crystal material. 19. The method of claim 13, wherein the mixture is disposed between the pair of substrates after the pair of substrates are arranged so as to be opposed to each other. 20. The method of claim 13, further comprising a step of forming a plurality of thin film transistors on one of the pair of substrates. 21. The method according to claim 13, further comprising a step of disposing a polarity plate on an outer surface of each of the pair of substrates. 22. The method of claim 13, further comprising a step of curing the resin after separating the resin from the mixture. 23. The method of claim 13, wherein the step of separating the resin from the mixture is performed after orienting the liquid crystal material. 24. A method for manufacturing a liquid crystal device comprising the steps of: disposing a mixture comprising a liquid crystal material and a curable resin containing a reaction initiating agent between a pair of substrates wherein at least one of the pair of substrates has an orientation film in contact with the mixture;orienting the liquid crystal material; andseparating the resin from the mixture to form a continuous layer of the liquid crystal material between the pair of substrates, wherein the resin is formed mainly on and in contact with a surface of the orientation film,wherein the continuous layer of the liquid crystal material covers an entire region of a pixel electrode, andwherein the resin is formed in a shape of grains on the surface of the orientation film. 25. The method of claim 24 wherein the liquid crystal material is a ferroelectric liquid crystal or an antiferroelectric liquid crystal. 26. The method of claim 24 wherein the resin formed on the surface of the orientation film restrains an orientation control force of the orientation film with respect to the liquid crystal material. 27. The method of claim 24 wherein the mixture is disposed between the pair of substrates after the pair of substrates are arranged so as to be opposed to each other. 28. The method of claim 24 further comprising a step of forming a plurality of thin film transistors on one of the pair of substrates. 29. The method according to claim 24, further comprising a step of disposing a polarity plate on an outer surface of each of the pair of substrates. 30. The method of claim 24, further comprising a step of curing the resin after separating the resin from the mixture. 31. The method of claim 24, wherein the step of separating the resin from the mixture is performed after orienting the liquid crystal material. 32. A method for manufacturing a liquid crystal device comprising the steps of: disposing a mixture comprising a liquid crystal material and a curable resin containing a reaction initiating agent between a pair of substrates wherein at least one of the pair of substrates has an orientation film in contact with the mixture;orienting the liquid crystal material; andseparating the resin from the mixture to form a continuous layer of the liquid crystal material between the pair of substrates, wherein the resin is formed mainly on and in contact with a surface of the orientation film,wherein the continuous layer of the liquid crystal material covers an entire region of a pixel electrode, andwherein the resin is formed in a shape of grains on the surface of the orientation film. 33. The method of claim 32, wherein the liquid crystal material is a ferroelectric liquid crystal or an antiferroelectric liquid crystal. 34. The method of claim 32, wherein the resin formed on the surface of the orientation film restrains an orientation control force of the orientation film with respect to the liquid crystal material. 35. The method of claim 32, wherein the mixture is disposed between the pair of substrates after the pair of substrates are arranged so as to be opposed to each other. 36. The method of claim 32, further comprising a step of forming a plurality of thin film transistors on one of the pair of substrates. 37. The method according to claim 32, further comprising a step of disposing a polarity plate on an outer surface of each of the pair of substrates. 38. The method of claim 32 further comprising a step of curing the resin after separating the resin from the mixture. 39. The method of claim 32, wherein the step of separating the resin from the mixture is performed after orienting the liquid crystal material.
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