[특허]Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls

Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C01B-033/027 C01B-033/029 C01B-033/03
출원번호	US-0163027 (2011-06-17)
등록번호	US-8404206 (2013-03-26)
발명자 / 주소	Kulkarni, Milind S. Gupta, Puneet Devulapalli, Balaji Ibrahim, Jameel Revankar, Vithal Foli, Kwasi
출원인 / 주소	MEMC Electronic Materials, Inc.
대리인 / 주소	Armstrong Teasdale LLP
인용정보	피인용 횟수 : 0 인용 특허 : 19

초록 ▼

Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor

대표청구항 ▼

1. A process for producing polycrystalline silicon product in a reactor comprising a reaction chamber and a distributor for evenly distributing gas into the reaction chamber, the reaction chamber comprising at least one reaction chamber wall, the distributor comprising a plurality of distribution openings which provide fluid communication between at least two sources of gas and the reaction chamber, each distribution opening having a channel portion and a flare-out portion and a throttle portion disposed between the channel portion and flare-out portion, the plurality of distribution openings comprising a plurality of peripheral openings and a plurality of central openings, the process comprising: feeding a carrier gas and a thermally decomposable silicon compound from the sources of gas through the distribution openings of the distributor and into the reaction chamber, wherein the concentration of carrier gas in the gas fed through the peripheral openings exceeds the concentration of carrier gas in the gas fed through the central openings to reduce the amount of silicon which deposits on the reactor wall, the gasses passing through the channel portion, the throttle portion and the flare-out portion of the distribution openings; andcontacting silicon particles with the thermally decomposable silicon compound in the reaction chamber to cause silicon to deposit onto the silicon particles and increase in size. 2. The process of claim 1 wherein the gas fed through the peripheral openings consists essentially of carrier gas. 3. The process of claim 2 wherein the gas fed through the central openings consists essentially of thermally decomposable compounds. 4. The process of claim 1 wherein the thermally decomposable compound is selected from the group consisting of silane, trichlorosilane, and mixtures thereof. 5. The process of claim 4 wherein the thermally decomposable compound is silane. 6. The process of claim 1 wherein the carrier gas is selected from the group consisting of hydrogen, argon, helium and mixtures thereof. 7. The process of claim 6 wherein the carrier gas is hydrogen. 8. The process of claim 1 wherein the silicon particles increase in size to between about 800 μm and about 2000 μm in nominal diameter. 9. The process of claim 1 wherein a carrier gas and a thermally decomposable silicon compound are fed from a first source of gas and a second source of gas through the distribution openings of the distributor. 10. The process of claim 1 wherein the distributor comprises a plurality of cones, the flare-out portion being in fluid communication with the throttle portion of the distribution opening and the cone, the gasses passing through the flare-out portion and cones. 11. The process of claim 10 wherein the cones that are in fluid communication with the flare-out portion of the peripheral distribution openings open into the reaction chamber.

이 특허에 인용된 특허 (19)

Allen Robert H. (Baton Rouge LA), Fluidized bed process.
상세보기
Yang, Wen-Ching; McLaughlin, David F.; Francis, Timothy L., Fluidized bed reaction design.
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Kim Hee Y. (Daejeon KRX) Song Yong M. (Daejeon KRX) Jeon Jong Y. (Daejeon KRX) Kwon Dae H. (Daejeon KRX) Lee Kang M. (Daejeon KRX) Lee Jae S. (Daejeon KRX) Park Dong S. (Daejeon KRX), Heating of fluidized bed reactor by microwaves.
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Lord, Stephen M, Machine for production of granular silicon.
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Oshita, Takahiro; Hirose, Tetsuhisa; Nagato, Shuichi; Miyoshi, Norihisa; Nakashiba, Masamichi, Method and apparatus for gasifying fluidized bed.
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Kim, Young Hee; Park, Yong-Ki, Method and apparatus for preparing polysilicon granules.
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Stephen M Lord, Method for improving the efficiency of a silicon purification process.
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Lord Stephen M. ; Milligan Robert J., Method for silicon deposition.
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Stephen M Lord, Method of improving the efficiency of a silicon purification process.
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Richard William Watson GB; Stephen Rhys Graville GB; John Allen Wainford GB, Partial combustion of hydrogen sulphide.
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Sancier Kenneth M. (Menlo Park CA), Process and apparatus for obtaining silicon from fluosilicic acid.
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Rodgers Michael A. (Tempe AZ), Process for manufacturing pure polycrystalline silicon.
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Schreieder Franz,DEX ; Kim Hee Young,KRX, Process for preparing highly pure silicon granules.
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Woerner, Lloyd M.; Moore, Edward B., Process for producing polycrystalline silicon.
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Rodgers Michael A. (Tempe AZ), Process for production of polycrystalline silicon.
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Padovani ; Francois A. ; Miller ; Michael Brant ; Moore ; James A. ; Fo wler ; James H. ; June ; Malcolm Neville ; Matthews ; James D. ; Morton ; T. R. ; Stotko ; Norbert A. ; Palmer ; Lewis B., Process of refining impure silicon to produce purified electronic grade silicon.
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Weidhaus,Dieter; Hayduk,Alexander, Radiation-heated fluidized-bed reactor.
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Lesk Israel A. (1750 E. Oregon Ave. Phoenix AZ 85016) Sarma Kalluri R. (2352 S. Los Altos Ave. Mesa AZ 85202), Silicon deposition process.
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Padovani Francois A. (Dallas TX) Miller Michael B. (Richardson TX) Moore James A. (Dallas TX) Fowler James H. (both of ; Plano TX) June Malcom N. (both of ; Plano TX) Matthews James D. (Denver CO) Mo, Silicon refinery.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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연합인증

Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls 원문보기

초록 ▼

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Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

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이 특허에 인용된 특허 (19)

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