Post-deposition cleaning methods and formulations for substrates with cap layers
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C11D-003/26
C11D-003/20
C11D-003/43
C09K-013/00
출원번호
US-0334462
(2008-12-13)
등록번호
US-8404626
(2013-03-26)
발명자
/ 주소
Kolics, Artur
Li, Shijian
Arunagiri, Tiruchirapalli
Thie, William
출원인 / 주소
Lam Research Corporation
대리인 / 주소
Williams, Larry
인용정보
피인용 횟수 :
3인용 특허 :
12
초록▼
One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with
One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with a solution comprising an amine to provide a pH for the cleaning solution of 7 to about 13. Another embodiment of the presented invention is a method of cleaning substrates. Still another embodiment of the present invention is a formulation for a cleaning solution.
대표청구항▼
1. A cleaning solution for an integrated circuit substrate surface having cap layer areas and dielectric areas, the cleaning solution comprising: a first amine;a second amine to provide a pH for the cleaning solution of 7 to 13;at least one complexing agent;at least one corrosion inhibitor;at least
1. A cleaning solution for an integrated circuit substrate surface having cap layer areas and dielectric areas, the cleaning solution comprising: a first amine;a second amine to provide a pH for the cleaning solution of 7 to 13;at least one complexing agent;at least one corrosion inhibitor;at least one surface active agent;at least one oxygen scavenger to lower the dissolved oxygen concentration in the cleaning solution to less than 1 ppm;at least one reducing agent selected from the group consisting of boron containing reducing agents, hypophosphites, and thiosulfate; andat least one water-soluble solvent. 2. The cleaning solution of claim 1, wherein the pH is from about 8 to about 11.5. 3. The cleaning solution of claim 1, wherein the at least one complexing agent is a non-amine. 4. The cleaning solution of claim 1, wherein the concentration of the first amine and the second amine is from about 1 g/L to about 100 g/L. 5. The cleaning solution of claim 1, wherein the concentration of the first amine and the second amine is from about 1 g/L to about 100 g/L and the first amine and the second amine are selected from the group consisting of primary alkylamines, secondary alkylamines, tertiary alkylamines, quaternary alkylamines, primary arylamines, secondary arylamines, tertiary arylamines, quaternary arylamines, ammonia, primary alkanolamines, secondary alkanolamines, tertiary alkanolamines, ethanolamine, diethanolamine, triethanolamine, choline, amines with mixed alkyl and alkanol functionalities, tetramethylguanidine, and hydroxylamine. 6. The cleaning solution of claim 1, wherein the at least one complexing agent concentration is from about 0.5 g/L to about 50 g/L. 7. The cleaning solution of claim 1, wherein the at least one complexing agent concentration is a value from about 0.5 g/L to about 50 g/L, and the at least one complexing agent is selected from the group consisting of carboxylic acids, hydroxycarboxylic acids, amino acids, phytic acid, and organic acids where Ig K for CoL>2. 8. The cleaning solution of claim 1, wherein the corrosion inhibitor concentration is between 0.01 g/L to 20 g/L. 9. The cleaning solution of claim 1, wherein the corrosion inhibitor is selected from the group consisting of polyvinylpyrrolidone, polyvinylalcohol, polyalkylimines, polyethylenimines, orthophosphates, metaphosphates, phosphites, phosphonates, silicates, alkylphosphonates, alkoxysilanes, nitrites, and bicyclohexylammonium nitrite. 10. The cleaning solution of claim 1, wherein the at least on oxygen scavenger concentration is between 0.05 g/L to 10 g/L. 11. The cleaning solution of claim 1, wherein the at least one oxygen scavenger is selected from the group consisting of hydroxylamine, diethylhydroxylamine, methyl-ethylketoxime, carbohydrazide, chlorogenic acid, hydrazine, hydrazine salts, derivatives of hydrazine, caffeic acid, phytic acid, luteolin, and sulfites. 12. The cleaning solution of claim 1, wherein the at least one reducing agent concentration is between 0.1 g/L to 10 g/L. 13. The cleaning solution of claim 1, wherein the at least one corrosion inhibitor is present in a concentration between about 0.01 g/L to about 10 g/L and the at least one oxygen scavenger is present in a concentration between about 0.05 g/L to about 10 g/L. 14. The cleaning solution of claim 1, wherein the at least one corrosion inhibitor concentration is between about 0.01 g/L to about 20 g/L and the at least one reducing agent concentration is between about 0.1 g/L to about 10 g/L. 15. The cleaning solution of claim 1, wherein the at least one oxygen scavenger concentration is between about 0.05 g/L to about 10 g/L and the at least one reducing agent concentration is between about 0.1 g/L to about 10 g/L. 16. The cleaning solution of claim 1, wherein the at least one corrosion inhibitor concentration is between about 0.01 g/L to about 20 g/L, the at least one oxygen scavenger concentration is between about 0.05 g/L to about 10 g/L, and the at least one reducing agent concentration is between about 0.1 g/L to about 10 g/L. 17. The cleaning solution of claim 1, wherein the at least one surface active agent is present in a concentration of about 0.02 g/L to about 2 g/L for each of the at least one surface active agent. 18. The cleaning solution of claim 1, wherein the at least one surface active agent is an anionic surface active agent, cationic surface active agent, nonionic surface active agent, amphoteric surface active agent, or combinations thereof. 19. The cleaning solution of claim 1, wherein the at least one water soluble solvent is present in a concentration from about 10 g/L to about 100 g/L. 20. The cleaning solution of claim 1, wherein the at least one water soluble solvent comprises primary alcohols, secondary alcohols, tertiary alcohols, polyols, ethylene glycol, dimethylsulfoxide, or propylenecarbonate. 21. The cleaning solution of claim 1, wherein the concentration of dissolved oxygen in the cleaning solution is less than 1 ppm. 22. A cleaning solution for an integrated circuit substrate comprising: an amine at a concentration from about 1 g/L to about 100 g/L to provide a pH for the cleaning solution of 7 to 13 and all values and subranges subsumed therein; a non-amine complexing agent at a concentration from about 0.5 g/L to about 50 g/L;a corrosion inhibitor at a concentration from about 0.01 g/L to about 20 g/L;a surface active agent at a concentration of 0.02 g/L to 2 g/L;an oxygen scavenger at a concentration from about 0.05 g/L to about 10 g/L, the oxygen scavenger comprising hydroxylamine, diethylhydroxylamine, methyl-ethylketoxime, carbohydrazide, chlorogenic acid, hydrazine, hydrazine salts, derivatives of hydrazine, caffeic acid, phytic acid, luteolin, and/or sulfites;a reducing agent at a concentration from about 0.1 g/L to about 10 g/L, the reducing agent comprising a boron containing reducing agent, a hypophosphite, and/or a thiosulfite; anda water soluble solvent at concentration from about 10 g/L to about 100 g/L.
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이 특허에 인용된 특허 (12)
Kolics, Artur; Petrov, Nicolai; Ting, Chiu; Ivanov, Igor, Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper.
Kolics, Artur; Petrov, Nicolai; Ting, Chiu; Ivanov, Igor C., Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation.
Kolics, Artur; Petrov, Nicolai; Ting, Chiu; Ivanov, Igor C., Solution composition and method for electroless deposition of coatings free of alkali metals.
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