초록 ▼

A crystal oscillator includes a cover, a crystal blank and an Integrated Circuit (IC) chip. The cover has a surface, a cavity formed in the surface, a plurality of conductive contacts and a conductive sealing ring. The conductive contacts are disposed on the surface, and the conductive sealing ring

A crystal oscillator includes a cover, a crystal blank and an Integrated Circuit (IC) chip. The cover has a surface, a cavity formed in the surface, a plurality of conductive contacts and a conductive sealing ring. The conductive contacts are disposed on the surface, and the conductive sealing ring is disposed on the surface and surrounds the conductive contacts. The IC chip is connected to the conductive contacts and the conductive sealing ring, and forms a hermetic chamber with the cover and the conductive sealing ring. The crystal blank is located in the hermetic chamber, and is electrically connected to the IC chip. Furthermore, a method for manufacturing a crystal oscillator is also provided.

대표청구항 ▼

1. A crystal oscillator, comprising: a cover with a plurality of split side surfaces, comprising a first surface, a second surface, a cavity, a first cover conductive layer, an element conductive contact, a plurality of conductive contacts and a conductive sealing ring, wherein the second surface is

1. A crystal oscillator, comprising: a cover with a plurality of split side surfaces, comprising a first surface, a second surface, a cavity, a first cover conductive layer, an element conductive contact, a plurality of conductive contacts and a conductive sealing ring, wherein the second surface is opposite to the first surface, the cavity is formed in the first surface and comprises a bottom surface and a side surface surrounding the bottom surface, the first cover conductive layer is disposed on the bottom surface of the cavity, the element conductive contact is disposed on the first cover conductive layer, the conductive contacts are disposed on the first surface, and the conductive sealing ring is disposed on the first surface and surrounds the conductive contacts;a crystal blank, connected to the element conductive contact; andan Integrated Circuit (IC) chip with a plurality of split side surfaces, comprising a plurality of conductive bonding pads and a conductive bonding ring, wherein the conductive bonding pads and the conductive bonding ring are disposed on a surface of the IC chip, and the cover and IC chip are bonded by connecting the conductive sealing ring of the cover and the conductive bonding ring of the IC chip to form a hermetic chamber surrounding the crystal blank. 2. The crystal oscillator according to claim 1, further comprising: a plurality of conductive pillars, respectively penetrating the cover and connected to the conductive contacts, wherein the cover comprises a second cover conductive layer, an insulating layer and at least one conductive bonding layer, the second cover conductive layer is disposed on the second surface and is connected to at least one of the conductive pillars, the insulating layer is disposed on the second surface and on the second cover conductive layer, and the insulating layer exposes a part of the second cover conductive layer, and the conductive bonding layer is disposed on the exposed part of the second cover conductive layer. 3. The crystal oscillator according to claim 1, further comprising: a plurality of conductive pillars, respectively penetrating the cover and connected to the conductive contact, wherein the first cover conductive layer extends to the first surface along the side surface of the cavity and is connected to at least one of the conductive contacts. 4. The crystal oscillator according to claim 1, further comprising: a plurality of conductive pillars, respectively penetrating the IC chip, and each of the conductive pillars being connected to the corresponding conductive bonding pad and the corresponding conductive contact, wherein the first cover conductive layer extends to the first surface along the side surface of the cavity and is connected to at least one of the conductive contacts. 5. The crystal oscillator according to claim 1, further comprising: a plurality of conductive pillars, respectively penetrating the cover, wherein at least one of the conductive pillars penetrates to the bottom surface of the cavity, and is connected to the first cover conductive layer. 6. A crystal oscillator, comprising: a cover with a plurality of split side surfaces, comprising a first surface, a second surface, a cavity, a plurality of conductive contacts and a conductive sealing ring, wherein the second surface is opposite to the first surface, the cavity is formed in the first surface and comprises a bottom surface and a side surface surrounding the bottom surface, the conductive contacts are disposed on the first surface, and the conductive sealing ring is disposed on the first surface and surrounds the conductive contacts;an Integrated Circuit (IC) chip with a plurality of split side surfaces, comprising a plurality of conductive bonding pads and a conductive bonding ring, wherein the conductive bonding pads and the conductive bonding ring are disposed on a surface of the IC chip, and the cover and IC chip are bonded by connecting the conductive sealing ring of the cover and the conductive bonding ring of the IC chip to form a hermetic chamber;a conductive layer, disposed in the hermetic chamber and electrically connected to at least one of the conductive contacts;an element conductive contact, located in the hermetic chamber and disposed on the conductive layer; anda crystal blank, located in the hermetic chamber and disposed on the element conductive contact. 7. The crystal oscillator according to claim 6, wherein the element conductive contact is disposed on a surface of the IC chip. 8. The crystal oscillator according to claim 6, further comprising: a plurality of conductive pillars, respectively penetrating the cover and each of the conductive pillars connected to the corresponding conductive contact and the corresponding conductive bonding pad. 9. The crystal oscillator according to claim 6, further comprising: a plurality of conductive pillars, respectively penetrating the IC chip and each of the conductive pillars connected to the corresponding conductive bonding pad and the corresponding conductive contact. 10. A method for manufacturing a crystal oscillator, comprising: providing a cover wafer and an Integrated Circuit (IC) wafer, the cover wafer having a plurality of covers and the IC wafer having a plurality of IC chips corresponding to the covers respectively;connecting the cover wafer and the IC wafer by a plurality of conductive sealing rings, each of the conductive sealing rings located between the corresponding cover and the corresponding IC chip to form a hermetic chamber; andlocating a crystal blank in each of the hermetic chamber,wherein each of the covers comprises a first surface, a cavity and a plurality of conductive contacts, the cavity is formed in the first surface and forms part of the hermetic chamber, the conductive sealing ring is disposed on the first surface, each of the IC chips comprises a silicon substrate, an IC layer disposed on the silicon substrate, and a conductive bonding ring connected to the conductive sealing ring,wherein each of the covers further comprises a first cover conductive layer, an element conductive contact and a plurality of conductive contacts, the first cover conductive layer is disposed on a bottom surface of the cavity and extends from a side surface of the cavity to the first surface, the element conductive contact is disposed in the cavity and is connected to the first cover conductive layer, the conductive contacts are disposed on the first surface and connected to the first cover conductive layer, the conductive sealing ring surrounds the conductive contacts, each of the IC chips further comprises a plurality of conductive bonding pads, and the conductive bonding pads are connected to the conductive contacts respectively. 11. The method for manufacturing the crystal oscillator according to claim 10, wherein each of the covers further comprises a second surface and a plurality of conductive pillars, the second surface is opposite to the first surface, the conductive pillars respectively penetrate the cover and connect the first surface and the second surface, and at least one of the conductive pillars is electrically connected to the first cover conductive layer. 12. The method for manufacturing the crystal oscillator according to claim 10, further comprising: performing a wafer dicing process on the cover wafer and the IC wafer connected to the cover wafer to form a plurality of crystal oscillators, each of the crystal oscillators including one of the covers, the corresponding one of the IC chips and one of the crystal blanks in the hermetic chamber. 13. A method for manufacturing a crystal oscillator, comprising: providing a cover wafer and an Integrated Circuit (IC) wafer, the cove wafer having a plurality of covers and the IC wafer having a plurality of IC chips corresponding to the covers respectively;connecting a crystal blank on each of the covers; andconnecting the cover wafer and the IC wafer by a plurality of conductive sealing rings, each of the conductive sealing rings being located between the corresponding cover and the corresponding IC chip to faun a hermetic chamber surrounding the corresponding crystal blank,wherein the step of providing the cover wafer comprises: etching each of the covers to form a cavity and a plurality of blind holes, wherein each of the covers comprises a first surface and a second surface, and the second surface is opposite to the first surface, the cavity is formed in the first surface, and the blind holes are formed in the second surface;insulating a bottom surface of the cavity and inner surfaces of the blind holes;forming a plurality of conductive pillars in the blind holes respectively with a metal plating process;thinning the first surface of each of the covers to expose an end surface of each of the conductive pillars at the first surface;depositing a first insulator on the first surface;removing part of the first insulator that is located on the end surface of at least one of the conductive pillars at the first surface to expose the end surface of the conductive pillar at the first surface;forming a first cover conductive layer on the bottom surface of the cavity, wherein the first cover conductive layer is extended to the first surface through the side surface and is connected to the at least one of the conductive pillars; andforming an element conductive contact, a plurality of conductive contacts and the conductive sealing ring, wherein the element conductive contact is located in the cavity and is connected to the first cover conductive layer, the conductive contacts are disposed on the first surface, and the conductive sealing ring is disposed on the first surface and surrounds the conductive contacts. 14. The method for manufacturing the crystal oscillator according to claim 13, the step of providing the cover wafer further comprising: depositing a second insulator on the second surface;removing part of the second insulator located on the end surface of at least one of the conductive pillars at the second surface to expose the end surface of the conductive pillar at the second surface;forming a second cover conductive layer on the second surface, wherein the second cover conductive layer is connected to the at least one of the conductive pillars;forming an insulating layer on the second surface and the second cover conductive layer, the insulating layer exposing a part of the second cover conductive layer; andforming at least one conductive bonding layer on the part of the second cover conductive layer exposed by the insulating layer. 15. The method for manufacturing the crystal oscillator according to claim 13, further comprising: thinning each of the IC chips. 16. The method for manufacturing the crystal oscillator according to claim 13, wherein the cover wafer is a silicon wafer. 17. The method for manufacturing the crystal oscillator according to claim 13, further comprising: performing a wafer dicing process on the cover wafer and the IC wafer connected to the cover wafer to form a plurality of crystal oscillators, each of the crystal oscillators including one of the covers, the corresponding one of the IC chips and one of the crystal blanks in the hermetic chamber.