Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C25D-005/10
C25D-005/50
C25D-007/12
C25D-003/56
출원번호
US-0642702
(2009-12-18)
등록번호
US-8425753
(2013-04-23)
발명자
/ 주소
Aksu, Serdar
Pinarbasi, Mustafa
출원인 / 주소
SoloPower, Inc.
대리인 / 주소
Pillsbury Winthrop Shaw Pittman LLP
인용정보
피인용 횟수 :
0인용 특허 :
27
초록▼
The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes electrodepositing a first layer including a film stack including at least a first film comprising copper, a second film comprising indium and a third film comprising gallium, wher
The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes electrodepositing a first layer including a film stack including at least a first film comprising copper, a second film comprising indium and a third film comprising gallium, wherein the first layer includes a first amount of copper, electrodepositing a second layer onto the first layer, the second layer including at least one of a second copper-indium-gallium-ternary alloy film, a copper-indium binary alloy film, a copper-gallium binary alloy film and a copper-selenium binary alloy film, wherein the second layer includes a second amount of copper, which is higher than the first amount of copper, and electrodepositing a third layer onto the second layer, the third layer including selenium; and reacting the precursor stack to form an absorber layer on the base.
대표청구항▼
1. A method of forming a solar cell absorber on a base, comprising: forming a precursor stack, comprising: electrodepositing a first layer including a film stack including at least a first film comprising copper, a second film comprising indium and a third film comprising gallium, wherein the first
1. A method of forming a solar cell absorber on a base, comprising: forming a precursor stack, comprising: electrodepositing a first layer including a film stack including at least a first film comprising copper, a second film comprising indium and a third film comprising gallium, wherein the first layer includes a first amount of copper,electrodepositing a second layer onto the first layer, the second layer including a copper-selenium binary alloy film, wherein the second layer includes a second amount of copper, which is higher than the first amount of copper, andelectrodepositing a third layer onto the second layer, the third layer including selenium; andreacting the precursor stack to form an absorber layer on the base. 2. The method of claim 1, wherein the first amount of copper includes about 35-49% of the total molar copper amount in the precursor stack, and the second amount of copper includes about 51-65% of the total molar copper amount in the precursor stack. 3. The method of claim 2, wherein the step of electrodepositing the first layer electrodeposits at least the film stack, and the film stack includes a stack order comprising one of copper/indium/copper/gallium, copper/gallium/copper/indium, and indium/copper/gallium. 4. The method of claim 3, wherein the step of electrodepositing the first layer electrodeposits at least the film stack and at least one of the first film and the third film comprises copper-gallium binary alloy. 5. The method of claim 2, wherein the step of electrodepositing the first layer electrodeposits at least the film stack, and wherein the film stack further includes a fourth copper film. 6. The method of claim 5, wherein the film stack includes a stack order comprising one of copper/gallium/copper/indium and copper/indium/copper/gallium. 7. The method of claim 1, wherein the step of electrodepositing the first layer electrodeposits at least the film stack and at least one of the first film and the second film comprises copper-indium binary alloy. 8. The method of claim 1, wherein the step of electrodepositing the first layer electrodeposits at least the film stack and at least one of the first film and the third film comprises copper-gallium binary alloy. 9. The method of claim 1, wherein copper in the second layer is graded so that the amount of copper adjacent the first layer is less than the amount of copper at the top of the second layer. 10. The method of claim 9, wherein the step of electrodepositing the second layer comprises electrodepositing a lower copper selenide portion on the first layer and an upper copper selenide portion on the lower copper selenide portion. 11. The method of claim 10, wherein the upper copper selenide portion includes more copper than the lower copper selenide portion. 12. The method of claim 1, wherein the step of electrodepositing the second layer comprises electrodepositing a lower copper selenide portion on the first layer and an upper copper selenide portion on the lower copper selenide portion. 13. The method of claim 12, wherein the upper copper selenide portion includes more copper than the lower copper selenide portion. 14. The method of claim 1, wherein the step of electrodepositing the second layer comprises electrodepositing a copper selenide layer on the first layer and depositing a copper cap on the copper selenide layer.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (27)
Ovshinsky Herbert C. (Oak Park MI) Izu Masatsugu (Birmingham MI), Apparatus for continuously producing tandem amorphous photovoltaic cells.
Bonnet Dieter (Friedrichsdorf DEX) Ehrhardt Josef (Hochheim/Main DEX) Hewig Gert (Alzenau DEX), Method of producing an absorber layer for solar cells with the aid of electrodeposition.
Bishop, Craig V.; Bokisa, George S.; Durante, Robert J.; Kochilla, John R., Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom.
Bhattacharya Raghu N. ; Contreras Miguel A. ; Keane James ; Tennant Andrew L. ; Tuttle John R. ; Ramanathan Kannan ; Noufi Rommel, Preparation of copper indium gallium diselenide films for solar cells.
Bhattacharya Raghu N. ; Hasoon Falah S. ; Wiesner Holm ; Keane James ; Noufi Rommel ; Ramanathan Kannan, Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency so.
Bhattacharya Raghu N. ; Contreras Miguel A. ; Keane James ; Tennant Andrew L. ; Tuttle John R. ; Ramanathan Kannan ; Noufi Rommel, Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high effic.
Bhattacharya Raghu N. ; Batchelor Wendi Kay ; Wiesner Holm ; Ramanathan Kannan ; Noufi Rommel, Preparation of cuxinygazsen precursor films and powders by electroless deposition.
Nakazawa Tatsuo (Nagano JPX) Hirano Tomio (Shizuoka JPX) Kamiya Takeshi (Shizuoka JPX), Process for producing copper-indium-sulfur-selenium thin film and process for producing copper-indium-sulfur-selenium ch.
Cipris Divna (Morristown NJ) Walsh Arthur T. (Morris Plains NJ), Process for the activation of nickel electrodes via the electrochemical deposition of selenium and/or tellurium.
Kapur Vijay K. (Northridge CA) Choudary Uppala V. (Chatsworth CA) Chu Alan K. P. (Granada Hills CA), Process of forming a compound semiconductive material.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.