초록

Self-aligned spacer multiple patterning method are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.

대표청구항 ▼

1. A self-aligned spacer multiple patterning method, comprising: (a) providing a semiconductor substrate comprising one or more layers to be patterned;(b) applying a first layer of a first photosensitive composition over the one or more layers to be patterned, wherein the first photosensitive compos

1. A self-aligned spacer multiple patterning method, comprising: (a) providing a semiconductor substrate comprising one or more layers to be patterned;(b) applying a first layer of a first photosensitive composition over the one or more layers to be patterned, wherein the first photosensitive composition comprises a first resin component and a first photoactive component;(c) exposing the first layer to activating radiation through a patterned photomask;(d) developing the exposed first layer to form a resist pattern;(e) heat treating the resist pattern in a hardbake process;(f) treating the hardbaked resist pattern with a material effective to make alkaline a surface of the resist pattern;(g) applying a second layer of a second photosensitive composition over the one or more layers to be patterned and in contact with the alkaline surface of the resist pattern, the second photosensitive composition comprising a second resin component and a photoacid generator;(h) exposing the second layer to activating radiation; and(i) developing the exposed second layer to form spacers over the one or more layers to be patterned, the spacers comprising portions of the second layer not removed during the second layer development. 2. The method of claim 1, wherein the step of exposing the second layer is a flood exposure. 3. The method of claim 1, wherein the steps of exposing and developing the second layer exposes and removes, respectively, the resist pattern. 4. The method of claim 1, further comprising removing the resist pattern after the steps of exposing and developing the second layer. 5. The method of claim 1, further comprising patterning one or more layer underlying the spacers using the spacers as a mask. 6. The method of claim 1, further comprising: (i) forming a spacer layer over sidewalls of the spacers, wherein the spacer layer is of a different material than the second layer; and(j) selectively removing the first spacers from the substrate, leaving second spacers formed from the spacer layer over the one or more layers to be patterned. 7. The method of claim 6, wherein the heat treating the resist pattern is conducted at a temperature of about 150° C. or higher. 8. The method of claim 1, wherein treating the resist pattern with the material effective to make alkaline a surface of the resist pattern comprises treating the resist pattern with an alkaline material and a surfactant. 9. The method of claim 1, wherein treating the resist pattern with the material effective to make alkaline a surface of the resist pattern comprises treating the resist pattern with a primary or secondary amine. 10. The method of claim 1, wherein the hardbaked first resist pattern is treated with the material effective to make alkaline a surface of the first resist pattern in a spin coating process. 11. The method of claim 1, wherein the material effective to make alkaline a surface of the resist pattern comprises an aqueous base developer. 12. The method of claim 11, wherein the aqueous base developer is a quaternary ammonium hydroxide solution. 13. The method of claim 10, wherein the quaternary ammonium hydroxide solution is a tetramethylammonium hydroxide solution. 14. The method of claim 1, wherein the second layer is positive-acting. 15. The method of claim 1, wherein steps (a) to (i) are conducted in sequence.