Flexible substrates having a thin-film barrier
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B05D-003/02
H01L-023/29
B32B-001/04
출원번호
US-0287537
(2011-11-02)
등록번호
US-8435605
(2013-05-07)
발명자
/ 주소
Aitken, Bruce Gardiner
Bookbinder, Dana Craig
Garner, Sean Matthew
Quesada, Mark Alejandro
출원인 / 주소
Corning Incorporated
대리인 / 주소
Able, Kevin M.
인용정보
피인용 횟수 :
19인용 특허 :
49
초록▼
Methods and apparatus provide for: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer being formed from a low liquidus temperature (LLT) material; and sintering the inorganic barrier layer while maintaining the flexible substrate below a critical tem
Methods and apparatus provide for: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer being formed from a low liquidus temperature (LLT) material; and sintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature.
대표청구항▼
1. A method, comprising: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer comprising at least one of a tin fluorophosphate material, a chalcogenide material, a phosphate material, a borate material, a bismuth zinc borate material, a glass, a borosi
1. A method, comprising: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer comprising at least one of a tin fluorophosphate material, a chalcogenide material, a phosphate material, a borate material, a bismuth zinc borate material, a glass, a borosilicate glass, a tellurite material, and a material including a composition of about 72 parts SiO2, about 1 part Al2O3, about 25 parts B2O3, about 0.5 parts Li2O, about 0.5 parts Na2O, and about 1 part K2O, wherein: (i) a modulus of the barrier layer is about 30 GPa to about 120 GPa; and (ii) a thickness of the barrier layer is less than about 10 μm; andsintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature thereof. 2. The method of claim 1, wherein a liquidus temperature of the barrier layer is below about 1000° C. 3. The method of claim 1, wherein a liquidus temperature of the barrier layer is below about 600° C. 4. The method of claim 1, wherein a liquidus temperature of the barrier layer is below about 400° C. 5. The method of claim 4, further comprising increasing the modulus of the inorganic barrier layer by sintering to a consolidation temperature. 6. The method of claim 1, wherein the critical temperature is at least one of: a softening temperature, a Tg temperature, and a temperature where about 10% weight loss occurs in the flexible substrate. 7. The method of claim 1, wherein the sintering step is such that at least one of pinholes, inherent porosity, and defects in the barrier layer are removed. 8. The method of claim 1, wherein the step of sintering includes controlling at least one of: (i) a surface roughness of the inorganic barrier layer; and (ii) a modulus of the inorganic barrier layer. 9. The method of claim 8, further comprising sintering the inorganic barrier layer to form a modulus gradient such that the modulus at a first depth is different from the modulus at a second depth of the inorganic barrier layer. 10. The method of claim 1, wherein the modulus of the inorganic barrier layer is about 30 GPa to about 80 GPa. 11. The method of claim 10, wherein the modulus of the inorganic barrier layer is about 30 GPa to about 50 GPa. 12. The method of claim 1, wherein the step of sintering is performed by exposing the barrier layer to thermal or electromagnetic energy sources. 13. The method of claim 12, wherein the electromagnetic energy source includes at least one of UV, visible, infrared, and microwave energy. 14. The method of claim 1, wherein the flexible substrate comprises at least one of a polyimide, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), polypropylene (PP), oriented polypropylene (OPP), polyethersulfone (PES), silicone, an amorphous polymer film, a crystalline polymer film, and a silicone composite. 15. The method of claim 1, wherein the inorganic barrier layer comprises at least one of a tin fluorophosphate material, chalcogenide material, phosphate material, borate material, bismuth zinc borate material, glass, borosilicate glass, and a tellurite material. 16. The method of claim 1, wherein the step of applying includes utilizing a selected one or a combination of the following: a sputtering process;a thermal evaporation process;an e-beam evaporation process;a vacuum deposition process;a spraying process;a pouring process;a fit-deposition process;a vapor-deposition process;a dip-coating process;a painting process;a laser-ablation process;an electrophoretic deposition process;a co-evaporation process;a rolling process; anda spin-coating process. 17. A method, comprising: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer comprising at least one of a tin fluorophosphate material, a chalcogenide material, a phosphate material, a borate material, a bismuth zinc borate material, a glass, a borosilicate glass, a tellurite material, and a material including a composition of about 72 parts SiO2, about 1 part Al2O3, about 25 parts B2O3, about 0.5 parts Li2O, about 0.5 parts Na2O, and about 1 part K2O, wherein at least one of: (i) a modulus of the barrier layer is about 30 GPa to about 120 GPa; and (ii) a thickness of the barrier layer is less than about 10 μm; andsintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature thereof and further comprising increasing the modulus of the inorganic barrier layer by sintering to a consolidation temperature, wherein a liquidus temperature of the barrier layer is below about 400° C. 18. A method, comprising: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer comprising at least one of a tin fluorophosphate material, a chalcogenide material, a phosphate material, a borate material, a bismuth zinc borate material, a glass, a borosilicate glass, a tellurite material, and a material including a composition of about 72 parts SiO2, about 1 part Al2O3, about 25 parts B2O3, about 0.5 parts Li2O, about 0.5 parts Na2O, and about 1 part K2O, wherein at least one of: (i) a modulus of the barrier layer is about 30 GPa to about 120 GPa; and (ii) a thickness of the barrier layer is less than about 10 μm; andsintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature thereof; wherein the step of sintering includes controlling at least one of: (i) a surface roughness of the inorganic barrier layer; and (ii) a modulus of the inorganic barrier layer; and further comprising sintering the inorganic barrier layer to form a modulus gradient such that the modulus at a first depth is different from the modulus at a second depth of the inorganic barrier layer.
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