초록 ▼

A semiconductor wafer is polished, wherein in a first step, the rear side of the wafer is polished by a polishing pad comprising fixedly bonded abrasives having a grain size of 0.1-1.0 μm, while supplying a polishing agent free of solid materials having a pH of at least 11.8, and, in a second step,

A semiconductor wafer is polished, wherein in a first step, the rear side of the wafer is polished by a polishing pad comprising fixedly bonded abrasives having a grain size of 0.1-1.0 μm, while supplying a polishing agent free of solid materials having a pH of at least 11.8, and, in a second step, the front side of the semiconductor wafer is polished, wherein a polishing agent having a pH of less than 11.8 is supplied. A polishing pad for use in apparatuses for polishing semiconductor wafers, has a layer containing abrasives, a layer composed of a stiff plastic and also a compliant, non-woven layer, wherein the layers are bonded to one another by means of pressure-sensitive adhesive layers.

대표청구항 ▼

1. A method for polishing a semiconductor wafer, comprising, in a first step, polishing the rear side of the semiconductor wafer by means of a polishing pad comprising fixedly bonded abrasives having a grain size of 0.1-1.0 μm, and with supply of a polishing agent solution which is free of solid mat

1. A method for polishing a semiconductor wafer, comprising, in a first step, polishing the rear side of the semiconductor wafer by means of a polishing pad comprising fixedly bonded abrasives having a grain size of 0.1-1.0 μm, and with supply of a polishing agent solution which is free of solid materials and which has a pH of at least 11.8, and, in a second step, the front side of the semiconductor wafer is polished, wherein a polishing agent having a pH less than 11.8 is supplied. 2. The method of claim 1, wherein the polishing agent in the first step is an aqueous solution of the compounds sodium carbonate (Na2CO3), potassium carbonate (K2CO3), sodium hydroxide (NaOH), potassium hydroxide (KOH), ammonium hydroxide (NH4OH), tetramethylammonium hydroxide (TMAH) or any desired mixtures thereof. 3. The method of claim 2, wherein the pH of the polishing agent solution is 11.8 to 12.5 and the proportion of the compounds in the polishing agent solution is 0.01 to 10% by weight. 4. The method of claim 1, wherein the polishing agent in the second step is a polishing agent slurry containing abrasive materials and a proportion of the abrasive materials in the polishing agent slurry is 0.25 to 20% by weight. 5. The method of claim 4, wherein the proportion of the abrasives in the polishing agent slurry is 0.25 to 1% by weight. 6. The method of claim 5, wherein the average particle size of the abrasives is 5 to 300 nm. 7. The method of claim 6, wherein the average particle size of the abrasives is 5 to 50 nm. 8. The method of claim 4, wherein the abrasive substance in the polishing agent slurry comprises one or more of the oxides of the elements aluminum, cerium or silicon. 9. The method of claim 8, wherein the polishing agent slurry contains colloidally disperse silica. 10. The method of claim 9, wherein the pH value of the polishing agent slurry is in the range of 10 to 11.5. 11. The method of claim 10, wherein the pH value of the polishing agent slurry is set by means of additives selected from sodium carbonate (Na2CO3), potassium carbonate (K2CO3), sodium hydroxide (NaOH), potassium hydroxide (KOH), ammonium hydroxide (NH4OH), tetramethylammonium hydroxide (TMAH) or any desired mixtures thereof. 12. The method of claim 1, wherein the polishing pads used in the first step contain abrasive materials selected from particles of oxides of the elements cerium, aluminum, silicon or zirconium or particles of hard materials such as silicon carbide, boron nitride or diamond. 13. The method of claim 12, wherein the average particle size of the abrasives contained in the FAP polishing pad is 0.1-0.6 μm. 14. The method of claim 12, wherein the average particle size of the abrasives contained in the FAP polishing pad is 0.1-0.25 μm. 15. The method of claim 12, wherein a polishing pad containing abrasives is used in the second step as well. 16. The method of claim 12, wherein the polishing pad containing abrasives is multilayered and comprises, alongside a layer having microreplicated structures composed of abrasive particles, a compliant, non-woven layer and a stiff plastic layer. 17. The method of claim 1, wherein the semiconductor wafer is a silicon wafer having a diameter of 300 mm or greater. 18. The method of claim 1, wherein a polishing pad containing fixedly bonded abrasives comprises a layer containing abrasives, a layer composed of a stiff plastic and also a compliant, non-woven layer, wherein the layers are bonded to one another by means of pressure-sensitive adhesive layers.