[미국특허]
Three-dimensional bicontinuous heterostructures, method of making, and their application in quantum dot-polymer nanocomposite photodetectors and photovoltaics
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01L-031/00
출원번호
US-0368747
(2012-02-08)
등록번호
US-8450138
(2013-05-28)
발명자
/ 주소
Sargent, Edward
McDonald, Steven Ashworth
Zhang, Shiguo
Levina, Larissa
Konstantatos, Gerasimos
Cyr, Paul
출원인 / 주소
InVisage Technologies, Inc.
대리인 / 주소
Schwegman Lundberg & Woessner, P.A.
인용정보
피인용 횟수 :
9인용 특허 :
145
초록▼
Provided herein are embodiments of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, include only protrusions or
Provided herein are embodiments of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, include only protrusions or peninsulas, and have no islands. The method of producing the three-dimensional bicontinuous heterostructure includes forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer that is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure, and forming a coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.
대표청구항▼
1. A method of producing a light-sensing system on a semiconductor substrate having at least one integrated circuit device defined thereon, the method comprising: forming a nanomaterial having at least one semiconductor quantum dot over the integrated circuit device, the nanomaterial having at least
1. A method of producing a light-sensing system on a semiconductor substrate having at least one integrated circuit device defined thereon, the method comprising: forming a nanomaterial having at least one semiconductor quantum dot over the integrated circuit device, the nanomaterial having at least one semiconductor quantum dot being applied via solution-processing to the semiconductor substrate having the at least one integrated circuit device;forming a three-dimensional bicontinuous heterostructure including at least two materials with a first material formed on the semiconductor substrate so that a surface of the first material completely covers a surface of the semiconductor substrate; andforming a second material located on the first material, the first and the second materials each having a structure and morphology that includes protrusions with substantially no islands, the first material and the second material each being spatially continuous, the protrusions from the first material penetrate into the second material and the protrusions from the second material penetrate into the first material to form an irregular interpenetrating interface between the first and the second materials, the protrusions from the first material being opposite the surface of the first material that completely covers the surface of the semiconductor substrate. 2. The method of claim 1, wherein at least one of the first and the second materials includes at least one of a plurality of visible-light absorbing semiconducting quantum dot nanoparticles and/or at least one of a plurality of infrared-light absorbing semiconducting quantum dot nanoparticles. 3. The method of claim 1, wherein a negative electrical bias is applied to one material and an positive electrical bias is applied to the other material for electron and hole extraction under illumination. 4. The method of claim 3, wherein a second electrode applied to a top surface of the second material for electron extraction is selected from the group consisting of Mg, Al, and Ag. 5. The method of claim 4, wherein the second electrode includes an interlayer of an electron-rich material. 6. The method of claim 5, wherein the electron-rich material is Li. 7. The method of claim 1, further comprising: forming a first electrode coupled to the first material; andforming a second electrode coupled to the second material, wherein the work functions of the first and the second materials are selected such that electrons travel towards one of the first and the second electrodes, and holes travel to the other electrode, resulting in a photovoltaic effect, characterized by a development of a sustained potential difference accompanied by net current flow into an external circuit without an application of an external bias to the first and the second electrodes. 8. The method of claim 7, wherein the first electrode comprises a hole conducting material. 9. The method of claim 1, wherein the first material includes the nanomaterial alone, and wherein the second material is selected from the group consisting of semiconductor polymers, organic molecules which transport electrons, holes or both, metals, pseudometallic materials, conducting oxides, Poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (PEDOT:PSS), and combinations thereof. 10. The method of claim 9, wherein the organic molecules are selected from the group consisting of oligomeric and polymeric organic molecules. 11. The method of claim 10, wherein the polymeric organic molecules are selected from the group consisting of poly[2-methoxy-5-(2′-ethylhexyloxyp-phenylenevinylene)](MEH-PPV), and polythiophene including regio-regular polythiophene. 12. The method of claim 9, wherein the nanomaterial is formed of nanoparticles which have had organic ligands removed from the surfaces thereof. 13. The method of claim 9, wherein the conducting oxide is selected from the group consisting of indium tin oxide, tin oxide, antimony-doped indium tin oxide, and antimony-doped tin oxide. 14. The method of claim 1, wherein the second material includes the at least one semiconductor dot, the at least one semiconductor dot being selected from a group consisting of visible-absorbing semiconducting quantum dot nanoparticles and infrared-absorbing semiconducting quantum dot nanoparticles. 15. The method of claim 1, wherein the first material includes the nanomaterial, and wherein the second material includes second visible and/or infrared-absorbing semiconducting quantum dot nanoparticles different from the first visible and/or infrared-absorbing semiconducting quantum dot nanoparticles alone. 16. The method of claim 15, wherein the nanomaterial or the visible and/or infrared-absorbing semiconducting quantum dot nanoparticles in the first and the second materials are made of different semiconductor materials that absorb at different wavelengths. 17. The method of claim 15, wherein the nanomaterial or the visible and/or infrared-absorbing semiconducting quantum dot nanoparticles in the first and the second materials are made of the same semiconductor material but have different sizes that absorb at different wavelengths. 18. The method of claim 1, wherein the second material is a composite material containing a first semiconducting polymer in combination with the nanomaterial, and wherein the first material is selected from the group consisting of semiconductor polymers, organic molecules which transport electrons, holes or both, metals, pseudo-metallic materials, conducting oxide and PEDOT:PSS, and combinations thereof. 19. The method of claim 18, wherein the composite material comprises a material having a ratio of quantum dot particles to semiconducting polymer that is greater than about 80% by mass. 20. The method of claim 19, wherein the ratio is about 90% by mass. 21. The method of claim 1, wherein the nanomaterial is selected from the group consisting of Ge, Si, SiGe, PbS, CdS, CdSe, PbSe, InAs, InP, InSb, InGaAsP, and core-shell nanoparticles consisting of combinations of semiconductors arrayed in a core-shell geometry. 22. The method of claim 1, wherein the nanomaterial is initially coated with organic ligands selected from the group consisting of amines, thiols, fatty acids, phosphines, and phosphine oxides. 23. The method of claim 1, wherein the protrusions from the first material penetrate into the second material and the protrusions from the second material penetrate into the first material and have lengths in a range from about 200 nm to about 2 microns, and wherein a portion of the first material formed on the semiconductor substrate outside of the interpenetrating interface has a thickness in a range from about 2 nm to about 200 nm, and wherein a portion of the second material outside of the interpenetrating interface has a thickness in a range from about 2 nm to about 200 nm. 24. The method of claim 1, wherein the nanomaterial absorbs light in a wavelength region from about 800 nm to about 2000 nm. 25. The method of claim 1, wherein the semiconductor substrate is glass, the first material includes indium tin oxide (ITO) coated with poly(p-phenylenevinylene) (PPV), and wherein the second material includes a mixture of MEH-PPV and PbS nanocrystals. 26. The method of claim 1, wherein the semiconductor substrate is a transparent semiconductor substrate, the first material is a semiconducting polymer layer coating the semiconductor substrate, and wherein the second material is a layer formed of infrared-absorbing quantum dot nanoparticles. 27. The method of claim 1, wherein the second material is selected from the group consisting of semiconductor polymers, organic molecules which transport electrons, holes or both, metals, pseudo-metallic materials, conducting oxide and (PEDOT:PSS), and combinations thereof. 28. The method of claim 1, wherein the semiconductor substrate is a transparent semiconductor substrate selected from a group consisting of quartz, glass, and a transparent polymer.
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