초록 ▼

A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon la

A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

대표청구항 ▼

1. A photovoltaic device comprising: a metal substrate with a crystal orientation;a heteroepitaxial crystal semiconductor layer having the crystal orientation of the metal substrate; andan insulating heteroepitaxial buffer layer having the crystal orientation of the metal substrate, the buffer layer

1. A photovoltaic device comprising: a metal substrate with a crystal orientation;a heteroepitaxial crystal semiconductor layer having the crystal orientation of the metal substrate; andan insulating heteroepitaxial buffer layer having the crystal orientation of the metal substrate, the buffer layer positioned between the substrate and the crystal semiconductor layer, the buffer layer reducing diffusion of metal from the metal substrate into the crystal semiconductor layer and providing chemical compatibility with the heteroepitaxial crystal semiconductor layer, wherein the buffer layer comprises one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate. 2. The photovoltaic device of claim 1 wherein: the metal substrate comprises a nickel tungsten foil textured by a rolling-assisted process, the crystal orientation being a biaxial orientation;the heteroepitaxial crystal semiconductor layer comprises a heteroepitaxial silicon layer; andthe buffer layer comprises sublayers of magnesium oxide and aluminum oxide. 3. The photovoltaic device of claim 2 wherein the crystal silicon layer comprises a first doped crystal silicon layer adjacent to the buffer layer and a second doped crystal silicon layer, the second doped silicon layer being doped with a lower concentration of dopant relative to the first doped crystal silicon layer. 4. The photovoltaic cell of claim 1 wherein the crystal orientation of the metal substrate is uniaxially or biaxially textured. 5. The photovoltaic cell of claim 2 wherein: the metal substrate is between 20 and 100 micrometers thick;the buffer layer is between 20 and 300 nanometers thick; andthe crystal silicon layer is between 2 and 20 micrometers thick. 6. The photovoltaic cell of claim 1 wherein the one or more electrically conductive pathways comprises a plurality of conductive pathways arranged in a grid pattern with substantially uniform separation between each of the plurality of conductive pathways. 7. The photovoltaic cell of claim 1 wherein the one or more electrically conductive pathways are positioned uniformly approximately one centimeter apart. 8. The photovoltaic cell of claim 1 wherein the one or more electrically conductive pathways are formed by causing localized metal diffusion through the buffer. 9. The photovoltaic cell of claim 1 wherein the one or more electrically conductive pathways are formed using an etchant to form apertures in the buffer layer and filling the apertures with conductive material. 10. A photovoltaic cell comprising: a back contact comprising a nickel tungsten foil substrate textured by a rolling-assisted process to have a crystal orientation;a doped first crystal silicon layer heteroepitaxially grown and having the same crystal orientation as the nickel tungsten foil substrate, the first crystal silicon layer is phosphorus doped;a second doped crystal silicon layer, the second crystal silicon layer being less doped than the first crystal silicon layer; anda heteroepitaxially grown buffer layer positioned between the doped first crystal silicon layer and the nickel tungsten foil substrate, the buffer having the same crystal orientation as the doped first crystal silicon and the nickel tungsten foil substrate, wherein the buffer layer comprises at least one conductive pathway electrically coupling the back contact and the first crystal silicon layer. 11. The photovoltaic cell of claim 10 wherein the at least one conductive pathway comprises one or more of crystal silicon of the first crystal silicon layer, metal from back contact diffusion, and metallic paste. 12. A method of electrically coupling a crystal oriented metal substrate of a photovoltaic cell with an absorber layer of the photovoltaic cell comprising creating a conductive pathway in a heteroepitaxially grown buffer layer positioned between the crystal oriented metal substrate and the absorber layer, wherein the conductive pathway is formed by intermixing metal from the metal substrate through the buffer layer using an infrared laser, wherein both the buffer layer and the absorber layer have the same crystal orientation of the metal substrate. 13. A photovoltaic device comprising: a metal substrate with a crystal orientation;a heteroepitaxial crystal silicon layer having the crystal orientation of the metal substrate; andan insulating heteroepitaxial buffer layer having the crystal orientation of the metal substrate, the buffer layer positioned between the substrate and the crystal silicon layer, the buffer layer reducing diffusion of metal from the metal substrate into the crystal silicon layer and providing chemical compatibility with the heteroepitaxial crystal silicon layer, wherein the buffer layer comprises one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.