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[미국특허] HVPE precursor source hardware 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/455
  • C23F-001/00
  • H01L-021/306
  • C23C-016/06
  • C23C-022/02
출원번호 US-0637028 (2009-12-14)
등록번호 US-8491720 (2013-07-23)
발명자 / 주소
  • Ishikawa, Tetsuya
  • Quach, David H.
  • Chang, Anzhong
  • Kryliouk, Olga
  • Melnik, Yuriy
  • Ratia, Harsukhdeep S.
  • Nguyen, Son T.
  • Pang, Lily
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Patterson & Sheridan, LLP
인용정보 피인용 횟수 : 1  인용 특허 : 106

초록

Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium

대표청구항

1. An apparatus for substrate processing, comprising: a vacuum chamber body; a first precursor source disposed adjacent to the vacuum chamber body and coupled to the vacuum chamber body, the first precursor source comprising: a first precursor source body; a first support liner disposed in the first

이 특허에 인용된 특허 (106) 인용/피인용 타임라인 분석

  1. Ofer Sneh ; Carl J. Galewski, Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition.
  2. Sneh Ofer ; Galewski Carl J., Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition.
  3. Sneh, Ofer; Galewski, Carl J., Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition.
  4. Thilderkvist, Anna Lena; Comita, Paul; Scudder, Lance; Riley, Norma, Apparatus and method for surface finishing a silicon film.
  5. Sneh, Ofer; Seidel, Thomas E.; Galewski, Carl, Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition.
  6. Sneh, Ofer; Seidel, Thomas E.; Galewski, Carl, Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition.
  7. Sneh, Ofer; Seidel, Thomas E.; Galewski, Carl, Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition.
  8. Carlson, David K.; Sanchez, Errol Antonio C.; Kuppurao, Satheesh, Apparatus and methods for chemical vapor deposition.
  9. Carlson, David K.; Sanchez, Errol; Kuppurao, Satheesh, Apparatus and methods for chemical vapor deposition.
  10. Omstead, Thomas R.; Wongsenakhum, Panya; Messner, William J.; Nagy, Edward J.; Starks, William; Moslehi, Mehrdad M., Apparatus for dispensing gas for fabricating substrates.
  11. Jeng, Nanseng, Barrier in gate stack for improved gate dielectric integrity.
  12. Bour,David; Smith,Jacob; Nijhawan,Sandeep, Buffer-layer treatment of MOCVD-grown nitride structures.
  13. John J. Hautala ; Johannes F. M. Westendorp, CVD of integrated Ta and TaNx films from tantalum halide precursors.
  14. Hautala, John J.; Westendorp, Johannes F. M., CVD of tantalum and tantalum nitride films from tantalum halide precursors.
  15. Jurgensen Holger,DEX ; Deschler Marc,DEX ; Strauch Gerd,DEX ; Schumacher Markus,DEX ; Kappeler Johannes,DEX, CVD reactor.
  16. Crawley John A.,GBX ; Saywell Victor J.,GBX, Chemical vapor deposition.
  17. Pang, Lily L.; Cho, Thomas K.; Ishikawa, Tetsuya, Chemical vapor deposition chamber lid assembly.
  18. Uhlenbrock,Stefan, Chemical vapor deposition methods utilizing ionic liquids.
  19. Parkhe, Vijay D.; Hausmann, Gilbert; Kalyanam, Jagadish, Chemical vapor deposition of barriers from novel precursors.
  20. Gilbert Hausmann ; Vijay Parkhe ; Jagadish Kalyanam, Chemical vapor deposition of niobium barriers for copper metallization.
  21. Gell ; Jr. Harold A. (13720 Lockdale Rd. Silver Spring MD 20906-2117), Coffee roaster.
  22. Stolarik, Douglas S.; Horner, Douglas M.; Mormino, Michael P.; Mest, Richard A., Composite water treatment vessel including liquid distributor plates.
  23. Tom Glenn M. (New Milford CT) McManus James V. (Danbury CT) Luxon Bruce A. (Stamford CT), Composition, apparatus, and process, for sorption of gaseous compounds of group II-VII elements.
  24. Glenn S. Solomon ; David J. Miller ; Tetsuzo Ueda, Compound gas injection system.
  25. Solomon Glenn S. ; Miller David J. ; Ueda Tetsuzo, Compound gas injection system and methods.
  26. Thomas E. Wicker ; Alan M. Schoepp ; Robert A. Maraschin, Contamination controlling method and apparatus for a plasma processing chamber.
  27. Dauelsberg, Martin; Schumacher, Marcus; Juergensen, Holger; Strauch, Gerd; Strzyzewski, Piotr, Device and method for depositing one or more layers on a substrate.
  28. J?rgensen,Holger; Strauch,Gerhard Karl; K?ppeler,Johannes, Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates.
  29. Ishikawa Tetsuya ; Staryuk Pavel ; Hanawa Hiroji, Dome: shape and temperature controlled surfaces.
  30. Sri Prakash Rangarajan ; John O'Grady, Dual fritted bubbler.
  31. Tysoe, Steven Alfred; LeBoeuf, Steven Francis; D'Evelyn, Mark Philip; Venkataramani, Venkat Subramaniam; Tilak, Vinayak; Fortin, Jeffrey Bernard; Becker, Charles Adrian; Arthur, Stephen Daley; Dasgupta, Samhita; Subramanian, Kanakasabapathi; Wojnarowski, Robert John; Ebong, Abasifreke Udo, Etchant, method of etching, laminate formed thereby, and device.
  32. Engdahl Gerald E. (Wheaton IL) Nail James A. (Carol Stream IL) Allo Vincent F. (Warrenville IL), Falling film freeze exchanger.
  33. Wang Luping ; Tom Glenn M., Fluid storage and dispensing system.
  34. Wyse, Carrie L.; Torres, Jr., Robert; Watanabe, Tadaharu; Vininski, Joseph V., Fluid storage and purification method.
  35. Wyse, Carrie L.; Torres, Jr., Robert; Vininski, Joseph V., Fluid storage and purification method and system.
  36. Wyse, Carrie L.; Torres, Jr., Robert; Vininski, Joseph V., Fluid storage and purification method and system.
  37. Wyse, Carrie L.; Torres, Jr., Robert; Watanabe, Tadaharu; Vininski, Joseph V., Fluid storage and purification method and system.
  38. Wyse, Carrie L.; Torres, Jr., Robert; Watanabe, Tadaharu; Vininski, Joseph V., Fluid storage and purification method and system.
  39. Sneh, Ofer; Seidel, Thomas E., Fully integrated process for MIM capacitors using atomic layer deposition.
  40. Vaudo Robert P. ; Redwing Joan M. ; Tischler Michael A. ; Brown Duncan W., GaN-based devices using (Ga, AL, In)N base layers.
  41. Vaudo, Robert P.; Redwing, Joan M.; Tischler, Michael A.; Brown, Duncan W.; Flynn, Jeffrey S., GaN-based devices using thick (Ga, Al, In)N base layers.
  42. Vanell James (Tempe AZ) Garcia Al (Gilbert AZ), Gas diffuser plate assembly and RF electrode.
  43. DeDontney, Jay Brian; Yao, Jack Chihchieh, Gas distribution system.
  44. Kaneko Yawara,JPX ; Yamada Norihide,JPX, Gas-phase etching and regrowth method for Group III-nitride crystals.
  45. Lee, Seong-kuk, Growth method of gallium nitride film.
  46. Solomon, Glenn S.; Miller, David J., Hybrid deposition system and methods.
  47. Ehrhart Michel (Strasbourg FRX), Incremental coder.
  48. Dauelsberg, Martin; Conor, Martin; Strauch, Gerhard Karl; Kaeppeler, Johannes, Inlet system for an MOCVD reactor.
  49. Brors Daniel L. (Los Altos Hills CA), Low resistivity tungsten silicon composite film.
  50. Jrgensen Holger (Aachen DEX) Grter Klaus (Aachen DEX) Deschler Marc (Hauset DEX) Balk Pieter (Aachen DEX), Material-saving process for fabricating mixed crystals.
  51. Londergan, Ana R.; Seidel, Thomas E.; Matthysse, Lawrence D.; Lee, Ed C., Method and apparatus for flexible atomic layer deposition.
  52. Anderson, Tim, Method and apparatus for producing group-III nitrides.
  53. Dunham Scott William, Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes.
  54. Dunham, Scott William, Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes.
  55. Dunham,Scott William, Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes.
  56. Jurgensen,Holger, Method and device for depositing crystalline layers on crystalline substrates.
  57. J?rgensen, Holger; Strauch, Gerhard Karl; Schwambera, Markus, Method and device for depositing in particular organic layers using organic vapor phase deposition.
  58. Heuken, Michael, Method and device for depositing layers.
  59. Kaeppeler,Johannes, Method and device for the temperature control of surface temperatures of substrates in a CVD reactor.
  60. Watanabe, Tadaharu; Torres, Jr., Robert; Vininski, Joseph, Method and system for supplying high purity fluid.
  61. Melnik, Yuri V.; Soukhoveev, Vitali; Ivantsov, Vladimir; Tsvetkov, Katie; Dmitriev, Vladimir A., Method for achieving low defect density AlGaN single crystal boules.
  62. J체rgensen,Holger; Krost,Alois; Dadgar,Armin, Method for depositing III-V semiconductor layers on a non-III-V substrate.
  63. Kaeppeler,Johannes; Heuken,Michael; Beccard,Rainer; Strauch,Gerhard Karl, Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates.
  64. Bremser, Michael; Dauelsberg, Martin; Strauch, Gerhard Karl, Method for depositing in particular crystalline layers, and device for carrying out the method.
  65. Omstead Thomas R. ; Wongsenakhum Panya ; Messner William J. ; Nagy Edward J. ; Starks William ; Moslehi Mehrdad M., Method for fabricating a device on a substrate.
  66. St. Amant, Jefferey; Matheson, Kenneth R., Method for treating a fluid to be scrubbed.
  67. Tsvetkov, Denis V.; Nikolaev, Andrey E.; Dmitriev, Vladimir A., Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE.
  68. Shibata Masatomo,JPX ; Furuya Takashi,JPX, Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method.
  69. Goela, Jitendra S.; Salihbegovic, Zlatko, Method of producing high aspect ratio domes by vapor deposition.
  70. Emerson,David Todd, Multi-chamber MOCVD growth apparatus for high performance/high throughput.
  71. Zorich, Robert Sam; Roberts, David Allen; Voloshin, George Oleg, Multiple contents container assembly for ultrapure solvent purging.
  72. Doering Kenneth ; Galewski Carl J., Multipurpose processing chamber for chemical vapor deposition processes.
  73. McNeilly Michael A. ; deLarios John M. ; Nobinger Glenn L. ; Krusell Wilbur C. ; Kao Dah-Bin ; Manriquez Ralph K. ; Fan Chiko, Organic preclean for improving vapor phase wafer etch uniformity.
  74. John J. Hautala ; Johannes F. M. Westendorp, PECVD of Ta films from tanatalum halide precursors.
  75. Hautala John J. ; Westendorp Johannes F. M., PECVD of TaN films from tantalum halide precursors.
  76. Hautala John J. ; Westendorp Johannes F. M., Plasma treated thermal CVD of TaN films from tantalum halide precursors.
  77. Boitnott Charles A. (Half Moon Bay CA) Caughran James W. (Lodi CA) Egbert Steve (Palo Alto CA), Process chamber sleeve with ring seals for isolating individual process modules in a common cluster.
  78. Molnar Richard J., Process for producing high-quality III-V nitride substrates.
  79. Ofer Sneh, Radical-assisted sequential CVD.
  80. Ofer Sneh, Radical-assisted sequential CVD.
  81. Sneh Ofer, Radical-assisted sequential CVD.
  82. Sneh, Ofer, Radical-assisted sequential CVD.
  83. Sneh, Ofer, Radical-assisted sequential CVD.
  84. Sneh, Ofer, Radical-assisted sequential CVD.
  85. Moslehi Mehrdad M., Rapid thermal processing high-performance multizone illuminator for wafer backside heating.
  86. Tempel,Daniel Joseph; Henderson,Philip Bruce; Brzozowski,Jeffrey Richard, Reactive liquid based gas storage and delivery systems.
  87. Yu Chienfan (Highland Mills NY) Kotecki David E. (Hopewell Junction NY) Natzle Wesley C. (New Paltz NY), Sealed chamber with heating lamps provided within transparent tubes.
  88. Ray Mark A. ; McGuire Gary E., Selective plasma deposition.
  89. Vaudo,Robert P.; Xu,Xueping; Brandes,George R., Semi-insulating GaN and method of making the same.
  90. Gottfried, Mark; Brown, Michael G.; Eliashevich, Ivan; Karlicek, Jr., Robert F.; Nering, James E., Semiconductor device separation using a patterned laser projection.
  91. Matsuoka, Takashi; Okamoto, Hiroshi, Semiconductor light-emitting device for optical communications.
  92. Guo,Shiping; Gotthold,David; Pophristic,Milan; Peres,Boris; Eliashevich,Ivan; Shelton,Bryan S.; Ceruzzi,Alex D.; Murphy,Michael; Stall,Richard A., Semiconductor structures for gallium nitride-based devices.
  93. Foster Robert F. (Weston MA) Rebenne Helen E. (Fair Lawn NJ) LeBlanc Rene E. (Branford CT) White Carl L. (Gilbert AZ) Arora Rikhit (Mesa AZ), Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means.
  94. Graham,David Ross; Tempel,Daniel Joseph; Toseland,Bernard Allen; Henderson,Philip Bruce; Hart,James Joseph; Appleby,John Bruce; Brzozowski,Jeffrey Richard; Puri,Pushpinder Singh, Storage and delivery systems for gases held in liquid medium.
  95. Hansen Christopher Lee, Tank assembly.
  96. Chau Yiu Chau,CAXITX L4B 1H3, Tank treatment assembly.
  97. Atlas, Boris; Bichutskiy, Yefim; Bruk, Boris, Temperature control unit for bubblers.
  98. Sajoto, Talex; Dornfest, Charles; Selyutin, Leonid; Zhao, Jun; Ku, Vincent; Jin, Xiao Liang, Temperature controlled gas feedthrough.
  99. John J. Hautala ; Johannes F. M. Westendorp, Thermal CVD of TaN films from tantalum halide precursors.
  100. Bittner,Gene, Treatment apparatus with modular chemical containing units having one-way valve assemblies.
  101. Sing-Pin Tay ; Yao Zhi Hu ; Sagy Levy ; Jeffrey Gelpey, UV pretreatment process for ultra-thin oxynitride formation.
  102. Ye, Zhiyuan; Kim, Yihwan; Li, Xiaowei; Zojaji, Ali; Dalida, Nicholas C.; Tang, Jinsong; Chen, Xiao; Samoilov, Arkadii V., Use of Cl2 and/or HCl during silicon epitaxial film formation.
  103. Parker Trent J. (Salt Lake City UT) Parker Byron M. (Salt Lake City UT), Vapor/liquid contact column structure.
  104. Kojima, Yasuhiko; Hoshino, Tomohisa, Vaporizer and processor.
  105. Gregg, John; Battle, Scott; Banton, Jeffrey I.; Naito, Donn; Fuierer, Marianne, Vaporizer delivery ampoule.
  106. Maruska, Herbert Paul; Gallagher, John Joseph; Chou, Mitch M. C., Wafer produced thereby, and associated methods and devices using the wafer.

이 특허를 인용한 특허 (1) 인용/피인용 타임라인 분석

  1. Williams, Steve; Wall, Jere James, Vent breather.

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