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특허 상세정보

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내보내기 페이스북 공유 카카오톡 공유

Sputtering target and manufacturing method thereof, and transistor

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-031/115   
미국특허분류(USC) 257/430; 257/052; 257/421; 257/425; 257/E21.006; 257/E21.077; 257/E21.085; 257/E21.091; 257/E21.17; 257/E21.126; 257/E21.127; 257/E21.212; 257/E21.304; 257/E21.329; 257/E21.347; 257/E21.37
출원번호 US-0945421 (2010-11-12)
등록번호 US-8492862 (2013-07-23)
우선권정보 JP-2009-260224 (2009-11-13)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Fish & Richardson P.C.
인용정보 피인용 횟수 : 13  인용 특허 : 33
초록

One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

대표
청구항
▼

1. A sputtering target comprising: a sintered body of at least one metal oxide selected from magnesium oxide, zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide,wherein the sintered body is subjected to a heat treatment after washing the sintered body, andwherein a concentration of hydrogen atoms contained in the sintered body is lower than 1×1016 atoms/cm3. 2. The sputtering target according to claim 1, wherein the sintered body is a sintered body of indium oxide, gallium oxide, and zinc oxide. 3. The sputtering target according to c...

이 특허에 인용된 특허 (33)

  1. Inoue, Kazuyoshi. Amorphous transparent conductive film, sputtering target as its raw material, amorphous transparent electrode substrate, process for producing the same and color filter for liquid crystal display. USP2011037897067.
  2. Hoffman,Randy L.; Mardilovich,Peter P.; Herman,Gregory S.. Combined binary oxide semiconductor device. USP2007107282782.
  3. Endo,Ayanori; Hayashi,Ryo; Iwasaki,Tatsuya. Field-effect transistor and method for manufacturing the same. USP2008087411209.
  4. Nause,Jeff; Ganesan,Shanthi. High-electron mobility transistor with zinc oxide. USP2006097105868.
  5. Bedinger, John M.; Fuller, Clyde R.. Hydrogen gettering system. USP2005106958260.
  6. Bedinger, John M.; Fuller, Clyde R.. Hydrogen gettering system. USP2004016673400.
  7. Shih,Yi Chi; Qiu,Cindy Xing; Shih,Ishiang; Qiu,Chunong. Indium oxide-based thin film transistors and circuits. USP2007057211825.
  8. Ishigami Takashi,JPX ; Watanabe Koichi,JPX ; Nitta Akihisa,JPX ; Maki Toshihiro,JPX ; Yagi Noriaki,JPX. Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same. USP2001126329275.
  9. Ishigami, Takashi; Watanabe, Koichi; Nitta, Akihisa; Maki, Toshihiro; Yagi, Noriaki. Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same. USP201011RE41975.
  10. Kimura, Hajime. Liquid crystal display device and electronic device. USP2011017872722.
  11. Hosono,Hideo; Hirano,Masahiro; Ota,Hiromichi; Orita,Masahiro; Hiramatsu,Hidenori; Ueda,Kazushige. LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film. USP2008017323356.
  12. Takeda,Katsutoshi; Isomura,Masao. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device. USP2006057049190.
  13. Kaji,Nobuyuki; Yabuta,Hisato. Method of fabricating oxide semiconductor device. USP2008127468304.
  14. den Boer Willem (Troy MI) Gu Tieer (Troy MI). Method of making a TFT with reduced channel length for LCDs. USP1997085661050.
  15. Kim Dong-Gyu,KRX ; Lee Won-Hee,KRX. Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure. USP1998035731856.
  16. Levy,David H.; Scuderi,Andrea C.; Irving,Lyn M.. Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby. USP2008077402506.
  17. Hosono,Hideo; Ota,Hiromichi; Orita,Masahiro; Ueda,Kazushige; Hirano,Masahiro; Kamiya,Toshio. Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film. USP2006067061014.
  18. Sawa, Akihito; Fujii, Takeshi; Kawasaki, Masashi; Tokura, Yoshinori. Nonvolatile memory element. USP2009087580276.
  19. Kawazoe Hiroshi,JPX ; Hosono Hideo,JPX ; Kudo Atsushi,JPX ; Yanagi Hiroshi,JPX. Oxide thin film. USP2001096294274.
  20. Hoffman,Randy L.; Herman,Gregory S.; Mardilovich,Peter P.. Semiconductor device. USP2007117297977.
  21. Akimoto, Kengo; Honda, Tatsuya; Sone, Norihito. Semiconductor device and manufacturing method thereof. USP2010067732819.
  22. Akimoto, Kengo; Honda, Tatsuya; Sone, Norihito. Semiconductor device and manufacturing method thereof. USP2010037674650.
  23. Cillessen Johannes F. M.,NLX ; Blom Paulus W. M.,NLX ; Wolf Ronald M. ; Giesbers Jacobus B.,NLX. Semiconductor device having a transparent switching element. USP1998045744864.
  24. Ito,Yoshihiro; Kadota,Michio. Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device. USP2009037501293.
  25. Saito,Keishi; Hosono,Hideo; Kamiya,Toshio; Nomura,Kenji. Sensor and image pickup device. USP2008117453065.
  26. Gu Tieer ; Boer Willem den. TFT with reduced channel length and parasitic capacitance. USP1999025872370.
  27. Kawasaki, Masashi; Ohno, Hideo; Kobayashi, Kazuki; Sakono, Ikuo. Thin film transistor and matrix display device. USP2003056563174.
  28. Ishii,Hiromitsu; Hokari,Hitoshi; Yoshida,Motohiko; Yamaguchi,Ikuhiro. Thin film transistor having an etching protection film and manufacturing method thereof. USP2008067385224.
  29. Furuta, Mamoru; Hirao, Takashi; Furuta, Hiroshi; Matsuda, Tokiyoshi; Hiramatsu, Takahiro; Ishii, Hiromitsu; Hokari, Hitoshi; Yoshida, Motohiko. Thin film transistor including low resistance conductive thin films and manufacturing method thereof. USP2009087576394.
  30. Iwasaki,Tatsuya. Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer. USP2008117453087.
  31. Kawasaki, Masashi; Ohno, Hideo. Transistor and semiconductor device. USP2004046727522.
  32. Kawasaki,Masashi; Ohno,Hideo. Transistor and semiconductor device. USP2006067064346.
  33. Hoffman,Randy L.; Herman,Gregory S.. Transistor using an isovalent semiconductor oxide as the active channel layer. USP2008127462862.

이 특허를 인용한 특허 피인용횟수: 13

  1. Imoto, Yuki; Maruyama, Tetsunori; Takayama, Toru. Method for forming oxide semiconductor film and method for manufacturing semiconductor device. USP2015129219159.
  2. Yamazaki, Shunpei. Method for forming sputtering target. USP2018029885108.
  3. Yamazaki, Shunpei; Maruyama, Tetsunori; Imoto, Yuki; Sato, Hitomi; Watanabe, Masahiro; Mashiyama, Mitsuo; Okazaki, Kenichi; Nakashima, Motoki; Shimazu, Takashi. Method for forming thin film utilizing sputtering target. USP2014118889477.
  4. Yamazaki, Shunpei; Tsubuku, Masashi; Oota, Masashi; Kurosawa, Yoichi; Ishihara, Noritaka. Method for manufacturing sputtering target, method for forming oxide film, and transistor. USP2016029267199.
  5. Honda, Tatsuya; Tsubuku, Masashi; Nonaka, Yusuke; Shimazu, Takashi; Yamazaki, Shunpei. Semiconductor device. USP2017089741860.
  6. Yamazaki, Shunpei; Koyama, Jun; Kato, Kiyoshi. Semiconductor device and driving method thereof. USP2018039922685.
  7. Imoto, Yuki; Maruyama, Tetsunori; Endo, Yuta. Semiconductor device and manufacturing method thereof. USP2016109472676.
  8. Yamazaki, Shunpei; Takayama, Toru; Sato, Keiji. Sputtering target and manufacturing method thereof, and transistor. USP20180910083823.
  9. Yamazaki, Shunpei; Takayama, Toru; Sato, Keiji. Sputtering target and manufacturing method thereof, and transistor. USP2015018937020.
  10. Yamazaki, Shunpei; Maruyama, Tetsunori; Imoto, Yuki; Sato, Hitomi; Watanabe, Masahiro; Mashiyama, Mitsuo; Okazaki, Kenichi; Nakashima, Motoki; Shimazu, Takashi. Sputtering target, method for manufacturing sputtering target, and method for forming thin film. USP2016079382611.
  11. Yamazaki, Shunpei. Sputtering target, method for manufacturing the same, and method for manufacturing semiconductor device. USP2018019865696.
  12. Yamazaki, Shunpei. Sputtering target, method for manufacturing the same, manufacturing semiconductor device. USP2014118894825.
  13. Liu, Xiang; Lee, Woobong. Thin film transistor array substrate and method for manufacturing the same. USP2014128912538.

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