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[미국특허] Methods of making thin film capacitors 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01G-007/00
출원번호 US-0168352 (2008-07-07)
등록번호 US-8499426 (2013-08-06)
발명자 / 주소
  • Palanduz, Cengiz A.
출원인 / 주소
  • Intel Corporation
대리인 / 주소
    Blakely, Sokoloff, Taylor & Zafman LLP
인용정보 피인용 횟수 : 0  인용 특허 : 70

초록 ▼

An apparatus including a first electrode; a second electrode; a first and second ceramic material disposed between the first electrode and the second electrode, the second ceramic material having a greater electrical conductivity than the first ceramic material. A method including forming a first ce

대표청구항 ▼

1. A method comprising: forming a first ceramic material film on a first conductive layer;forming a different second ceramic material film on the firs ceramic film; andforming a second conductive layer on the second ceramic material film to form a capacitor structure having the first ceramic materia

이 특허에 인용된 특허 (70) 인용/피인용 타임라인 분석

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