초록 ▼

A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen p

A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

대표청구항 ▼

1. A method for cleaning nickel and platinum residues from a surface of a substrate, comprising: exposing the surface to a solution comprising nitric acid or sulfuric acid;performing a rapid thermal process;exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric

1. A method for cleaning nickel and platinum residues from a surface of a substrate, comprising: exposing the surface to a solution comprising nitric acid or sulfuric acid;performing a rapid thermal process;exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid; andexposing the surface to a second solution containing hydrochloric acid and hydrogen peroxide. 2. A method as in claim 1 wherein the temperature of the second solution is less than or equal to 80 C. 3. A method as in claim 1 wherein the concentration of the hydrogen peroxide in the second solution is less than 20 wt %. 4. A method as in claim 1 wherein the concentration of the hydrochloric acid in the second solution is less than 20 wt %. 5. A method for forming a nickel platinum silicide, the method comprising: providing a substrate, the substrate comprising at least one silicon region;forming a layer comprising nickel and platinum on the substrate;performing a thermal process to form nickel platinum silicide;exposing the semiconductor substrate to a third solution comprising nitric acid or sulfuric acid;performing a second rapid thermal process;removing an un-reacted part of the nickel platinum layer using a first solution comprising a mixture of nitric acid and hydrochloric acid; andremoving platinum residues using a second solution containing hydrochloric acid and hydrogen peroxide. 6. A method as in claim 5 wherein the temperature of the first solution is less than 60 C. 7. A method as in claim 5 wherein the concentration of the nitric acid in the first solution is less than 10 wt %. 8. A method as in claim 5 wherein the concentration of the hydrochloric acid in the first solution is less than 20 wt %. 9. A method as in claim 5 wherein the temperature of the second solution is less than or equal to 80 C. 10. A method as in claim 5 wherein the concentration of the hydrogen peroxide in the second solution is less than 20 wt %. 11. A method as in claim 5 wherein the concentration of the hydrochloric acid in the second solution is less than 20 wt %. 12. A method for forming a semiconductor device, the method comprising: forming a transistor including a gate electrode and a source/drain diffused layer over a semiconductor substrate;forming a nickel platinum layer over the semiconductor substrate, covering the gate electrode and the source/drain diffused layer;performing a first rapid thermal process;exposing the semiconductor substrate to a first solution comprising nitric acid;performing a second rapid thermal process;exposing the substrate to a second solution comprising a mixture of nitric acid and hydrochloric acid; andexposing the substrate to a third solution containing hydrochloric acid and hydrogen peroxide. 13. A method as in claim 12 wherein the first rapid thermal process is performed at temperature less than about 380 C. 14. A method as in claim 12 wherein the concentration of the nitric acid in the first solution is less than about 10 wt %. 15. A method as in claim 12 wherein the second rapid thermal process is performed at temperature greater than about 300 C. 16. A method as in claim 12 wherein the temperature of the third solution is less than or equal to 80 C. 17. A method as in claim 12 wherein the concentration of the hydrogen peroxide in the third solution is less than 20 wt %. 18. A method as in claim 12 wherein the concentration of the hydrochloric acid in the third solution is less than 20 wt %.