IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0532921
(2012-06-26)
|
등록번호 |
US-8519818
(2013-08-27)
|
우선권정보 |
TW-101101317 A (2012-01-13) |
발명자
/ 주소 |
- Chen, Chung-Nan
- Hsiao, Chien-Hua
- Huang, Wen-Chie
|
출원인 / 주소 |
- National Kaohsiung University of Applied Sciences
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
1 인용 특허 :
6 |
초록
▼
A metallic silicide resistive thermal sensor has a body, a conductive wire and multiple electrodes. The body has multiple etching windows formed on the body and a cavity formed under the etching windows. The etching windows separate the body into a suspended part and multiple connection parts. The c
A metallic silicide resistive thermal sensor has a body, a conductive wire and multiple electrodes. The body has multiple etching windows formed on the body and a cavity formed under the etching windows. The etching windows separate the body into a suspended part and multiple connection parts. The conductive wire is formed on the suspended part and the connection parts and is made of metallic silicide. The electrodes are formed on the body and are electrically connected to the conductive wire. The metallic silicide is compatible for common CMOS manufacturing processes. The cost for manufacturing the resistive thermal sensor decreases. The metallic silicon is stable at high temperature. Therefore, the performance of the resistive thermal sensor in accordance with the present invention is improved.
대표청구항
▼
1. A metallic silicide resistive thermal sensor comprising: a body comprising: a central region;a surrounding region;multiple etching windows formed on the central region; anda cavity formed under the etching windows and the central region and communicating with the etching windows; the etching wind
1. A metallic silicide resistive thermal sensor comprising: a body comprising: a central region;a surrounding region;multiple etching windows formed on the central region; anda cavity formed under the etching windows and the central region and communicating with the etching windows; the etching windows separating the body into: a suspended part formed above the cavity; andmultiple connection parts formed above the cavity, extending from the surrounding region and connected to the suspended part to support the suspended part above the cavity;a conductive wire formed on the suspended part and the connection parts, made of metallic silicide and has multiple ends, wherein the conductive wire is serpentine; andmultiple electrodes formed on the body and electrically and respectively connected to the ends of the conductive wire. 2. The resistive thermal sensor as claimed in claim 1, the body comprising: a substrate, wherein the cavity is formed in the substrate; andan insulation layer formed on the substrate, wherein the etching windows are formed in the insulation layer;wherein the conductive wire is formed on the insulation layer. 3. The resistive thermal sensor as claimed in claim 2 further comprising an outer insulation layer formed on the body, wherein: the outer insulation layer covers the suspended part and the connection parts and has multiple holes corresponding to the electrodes; andthe electrodes are formed on the outer insulation layer and respectively extend into the holes to electrically connect to the conductive wire. 4. The resistive thermal sensor as claimed in claim 1, the body comprising: a substrate;a first insulation layer formed on the substrate;a second insulation layer formed on the first insulation layer, wherein the etching windows are formed in the second insulation layer and the cavity is formed between the first insulation layer and the second insulation layer;wherein the conductive wire is formed on the second insulation layer. 5. The resistive thermal sensor as claimed in claim 4 further comprising an outer insulation layer formed on the second insulation layer, wherein: the outer insulation layer covers the suspended part and the connection parts and has multiple holes corresponding to the electrodes; andthe electrodes are formed on the outer insulation layer and respectively extend into the holes to electrically connect to the conductive wire. 6. The resistive thermal sensor as claimed in claim 1 further comprising an outer insulation layer, wherein the body is a substrate;the etching windows are formed on the substrate;the cavity is formed in the substrate;the suspended part and the connection part is the conductive wire;the outer insulation layer is formed on the substrate and covers the suspended part and the connection parts and has multiple holes corresponding to the electrodes; andthe electrodes are formed on the outer insulation layer and respectively extend into the holes to electrically connect to the conductive wire. 7. The resistive thermal sensor as claimed in claim 1, wherein the conductive wire can be titanium silicide, cobalt silicide, nickel silicide, tantalum silicide, tungsten silicide or molybdenum silicide. 8. The resistive thermal sensor as claimed in claim 1, wherein a thickness of the conductive wire is between 10 nm and 500 nm. 9. The resistive thermal sensor as claimed in claim 1, wherein a sheet resistance of the conductive wire is below 20 ohm/sq. and a temperature coefficient of resistance of the conductive wire is positive. 10. The resistive thermal sensor as claimed in claim 1, wherein the multiple etching windows comprise: a first etching window having a first groove having two opposite terminals;a second groove extending from one terminal; anda third groove extending from another terminal;the first, the second and the third groove forming a C shape; anda second etching window having a first groove having two opposite terminals;a second groove extending from one terminal; anda third groove extending from another terminal;the first, the second and the third groove forming a C shape;the suspended part enclosed within the first etching window and the second etching window; andthe connection parts respectively formed between the second grooves of the first etching window and the second etching window and between the third grooves of the first etching window and the second etching window. 11. A method for manufacturing a metallic silicide resistive thermal sensor comprising the following steps: providing a base;forming a metallic silicide on the base, wherein the metallic silicide is serpentine;forming a conducting layer on the base and the conducting layer covering and electrically connected to the metallic silicide;partially removing the conducting layer to maintain a part of the conducting layer to form multiple electrodes electrically connected to the metallic silicide;forming multiple etching windows on the base, wherein a surrounding region is defined around the etching windows, and the etching windows separate the base into a suspended part and multiple connection parts connected to the suspended part; andforming a cavity under the etching windows, the suspended part and the connection parts, wherein the connection parts extend from the surrounding region and are connected to the suspended part to support the suspended part above the cavity. 12. The method as claimed in claim 11, wherein the base comprises a substrate and an insulation layer formed on the substrate; andthe metallic silicide is made by the following steps: forming a silicon film on the insulation layer;making the silicon film serpentine;forming a metal film on the insulation layer to cover the silicon film;annealing the base at an annealing temperature to make the metal film diffuse into the silicon film, wherein the silicon film turns into the metallic silicide and the metallic silicide forms a conductive wire and multiple conductive wire; andremoving the metal film that has not reacted with the silicon film yet. 13. The method as claimed in claim 12 further comprising the following steps: forming an outer insulation layer on the insulation layer after forming the metallic silicide to cover the metallic silicide;defining multiple electrode formation areas on the outer insulation layer;forming multiple holes through the outer insulation layer at the electrode formation areas, wherein the metallic silicide is partially exposed in the holes; andforming the conducting layer on the outer insulation layer, wherein the conducting layer extends into the holes to electrically connect to the metallic silicide. 14. The method as claimed in claim 11, wherein the base is manufactured by the following steps: providing a substrate having a top and a first insulation layer formed on the top;forming a sacrificial layer on the first insulation layer;partially removing the sacrificial layer to form a cavity determination layer by the sacrificial layer remaining on the first insulation layer; andforming a second insulation layer on the first insulation layer to cover the cavity determination layer; andthe cavity is formed by etching the cavity determination layer through the etching windows, and the etching windows are formed in the second insulation layer. 15. The method as claimed in claim 14, wherein the metallic silicide is manufactured by the following steps: forming a silicon film on the second insulation layer;making the silicon film serpentine;forming a metal film on the second insulation layer to cover the silicon film;annealing the base at an annealing temperature to make the metal film diffuse into the silicon film, wherein the silicon film turns into the metallic silicide and the metallic silicide forms a conductive wire and multiple conductive wire; andremoving the metal film that has not reacted with the silicon film yet. 16. The method as claimed in claim 14 further comprising the following steps: forming an outer insulation layer on the second insulation layer after forming the metallic silicide to cover the metallic silicide;defining multiple electrode formation areas on the outer insulation layer;forming multiple holes through the outer insulation layer at the electrode formation areas, wherein the metallic silicide is partially exposed in the holes; andforming the conducting layer on the outer insulation layer, wherein the conducting layer extends into the holes to electrically connect to the metallic silicide. 17. The method as claimed in claim 15 further comprising the following steps: forming an outer insulation layer on the second insulation layer after forming the metallic silicide to cover the metallic silicide;defining multiple electrode formation areas on the outer insulation layer;forming multiple holes through the outer insulation layer at the electrode formation areas, wherein the metallic silicide is partially exposed in the holes; andforming the conducting layer on the outer insulation layer, wherein the conducting layer extends into the holes to electrically connect to the metallic silicide. 18. The method as claimed in claim 11 further comprising the following steps: forming an outer insulation layer on the base after forming the metallic silicide to cover the metallic silicide, wherein the base is a silicon substrate;defining multiple electrode formation areas on the outer insulation layer;forming multiple holes through the outer insulation layer at the electrode formation areas, wherein the metallic silicide is partially exposed in the holes; andforming the conducting layer on the outer insulation layer, wherein the conducting layer extends into the holes to electrically connect to the metallic silicide. 19. The method as claimed in claim 18, wherein the metallic silicide is manufactured by the following steps: forming a metal film on the base;making the metal film serpentine;annealing the base at an annealing temperature to make the metal film diffuse into the base to form the metallic silicide, wherein the metallic silicide forms a conductive wire and multiple conductive wire; andremoving the metal film that has not reacted with the base yet. 20. The method as claimed in claim 19, wherein the annealing temperature approximates to 800° C.
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