Precursor compositions for ALD/CVD of group II ruthenate thin films
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C07F-015/00
C03C-017/10
출원번호
US-0523704
(2007-03-12)
등록번호
US-8524931
(2013-09-03)
국제출원번호
PCT/US2007/063831
(2007-03-12)
§371/§102 date
20090817
(20090817)
국제공개번호
WO2008/088563
(2008-07-24)
발명자
/ 주소
Xu, Chongying
Hendrix, Bryan C.
Cameron, Thomas M.
Roeder, Jeffrey F.
Stender, Matthias
Chen, Tianniu
출원인 / 주소
Advanced Technology Materials, Inc.
대리인 / 주소
Hultquist, PLLC
인용정보
피인용 횟수 :
0인용 특허 :
37
초록▼
Precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of strontium ruthenium oxide (SrRuO3) thin films, e.g., in the manufacture of microelectronic devices, as well as processes of making and using such precursors, and precursor supply systems containing
Precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of strontium ruthenium oxide (SrRuO3) thin films, e.g., in the manufacture of microelectronic devices, as well as processes of making and using such precursors, and precursor supply systems containing such precursor compositions in packaged form. Cyclopentadienyl compounds of varied type are described, including cyclopentadienyl as well as non cyclopentadienyl ligands coordinated to ruthenium, strontium or barium central atoms. The precursors of the invention are useful for forming contacts for microelectronic memory device structures, and in a specific aspect for selectively coating copper metallization without deposition on associated dielectric, under deposition conditions in a forming gas ambient.
대표청구항▼
1. A composition, comprising a compound or complex comprising a ruthenium compound containing at least one cyclopentadienyl ligand, and at least one further ligand selected from among guanidinate and beta-diketiminate ligands. 2. A composition comprising a compound or complex comprising a mixed liga
1. A composition, comprising a compound or complex comprising a ruthenium compound containing at least one cyclopentadienyl ligand, and at least one further ligand selected from among guanidinate and beta-diketiminate ligands. 2. A composition comprising a compound or complex comprising a mixed ligand monomeric Cp complex of ruthenium, calcium strontium or barium, selected from among: ruthenium beta-diketiminate compounds of the formula wherein each of R1, R2, R3, R4 and R5 can be the same as or different from the others, and each is independently selected from among hydrogen, C1-C12 alkyl, C1-C12 alkylamino, C3-C8 cycloalkyl, C6-C12 aryl, C5-C12 heteroaryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the ruthenium central atom, and selected from among aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl, and acetylalkyl, and wherein each of R6, R7, and R8 can be the same as or different from the others, and is independently selected from hydrogen, C1-C6 alkyl, C6-C10 aryl, C1-C6 alkylamine, silyl and substituted silyl. 3. A composition comprising a compound or complex comprising a mixed ligand monomeric Cp complex of ruthenium, calcium, strontium or barium, selected from among: ruthenium beta-diketoiminate compounds of the formula wherein each of R1, R2, R3, R4 and R5 can be the same as or different from the others, and each is independently selected from among hydrogen, C1-C12 alkyl, C1-C12 alkylamino, C3-C8 cycloalkyl, C6-C12 aryl, C5-C12 heteroaryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the ruthenium central atom, and selected from among aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl, and acetylalkyl, and wherein each of R6, R7, and R8 can be the same as or different from the others, and is independently selected from C1-C6 alkyl, C6-C10 aryl, C1-C6 alkylamine, silyl and substituted silyl. 4. A composition comprising a compound or complex comprising a mixed ligand monomeric Cp complex of ruthenium, calcium, strontium or barium, selected from among: ruthenium guanidinate compounds of the formula: wherein each of R1, R2, R3, R4 and R5 can be the same as or different from the others, and each is independently selected from among hydrogen, C1-C12 alkyl, C1-C12 alkylamino, C3-C8 cycloalkyl, C6-C12 aryl, C5-C12 heteroaryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6alkyl, and pendant ligands including functional group(s) providing further coordination to the ruthenium central atom, and selected from among aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl, and acetylalkyl, and wherein each of R6, R7, R8 and R9 can be the same as or different from the others, and is independently selected from hydrogen, C1-C5 alkyl, C6-C10 aryl, C3-C9 cycloalkyl, silyl and substituted silyl.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (37)
Baum Thomas H. ; Bhandari Gautam, Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition.
Baum Thomas H. ; Bhandari Gautam ; Chappuis Margaret, Anhydrous mononuclear tris(.beta.-diketonate) bismuth compositions for deposition of bismuth-containing films, and meth.
Hendrix,Bryan C.; Welch,James J.; Bilodeau,Steven M.; Roeder,Jeffrey F.; Xu,Chongying; Baum,Thomas H., Chemical vapor deposition of high conductivity, adherent thin films of ruthenium.
Wang, Ziyun; Xu, Chongying; Laxman, Ravi K.; Baum, Thomas H.; Hendrix, Bryan; Roeder, Jeffrey, Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride.
Baum Thomas H. ; Doubinina Galena ; Studebaker Daniel, Compositions and method for forming doped A-site deficient thin-film manganate layers on a substrate.
Baum Thomas H. ; Stauf Gregory T. ; Kirlin Peter S. ; Brown Duncan W. ; Gardiner Robin A. ; Bhandari Gautam ; Vaartstra Brian A., Growth of BaSrTiO.sub.3 using polyamine-based precursors.
Baum Thomas H. ; Dubois Raymond H., Lewis base adducts of anhydrous mononuclear tris(.beta.-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same.
Hintermaier Frank S.,DEX ; Dehm Christine,DEX ; Hoenlein Wolfgang,DEX ; Van Buskirk Peter C. ; Roeder Jeffrey F. ; Hendrix Bryan C. ; Baum Thomas H. ; Desrochers Debra A., Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices.
Kirlin Peter S. ; Brown Duncan W. ; Baum Thomas H. ; Vaarstra Brian A. ; Gardiner Robin A., Metal complex source reagents for chemical vapor deposition.
Kirlin Peter S. ; Brown Duncan W. ; Baum Thomas W. ; Vaarstra Brian A. ; Gardiner Robin A., Metal complex source reagents for chemical vapor deposition.
Gregg,John N.; Battle,Scott L.; Banton,Jeffrey I.; Naito,Donn K.; Laxman,Ravi, Method and apparatus to help promote contact of gas with vaporized material.
Gopinath,Sanjay; Dalton,Jeremie; Blackburn,Jason M.; Drewery,John; van den Hoek,Willibrordus Gerardus Maria, Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds.
Beach David B. (Yorktown Hgts. NY) Jasinski Joseph M. (Pleasantville NY), Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex.
Gardiner Robin A. ; Kirlin Peter S. ; Baum Thomas H. ; Gordon Douglas ; Glassman Timothy E. ; Pombrik Sofia ; Vaartstra Brian A., Method of forming metal films on a substrate by chemical vapor deposition.
Gardiner Robin A. ; Kirlin Peter S. ; Baum Thomas H. ; Gordon Douglas ; Glassman Timothy E. ; Pombrik Sofia ; Vaartstra Brian A., Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions.
Kadokura Hidekimi,JPX, Process for producing bis(alkyl-cyclopentadienyl)ruthenium complexes and process for producing ruthenium-containing films by using the same.
Kadokura, Hidekimi; Higashi, Shintaro; Kuboshima, Yoshinori, Raw material for forming a strontium-containing thin film and process for preparing the raw material.
Gardiner,Robin A.; Baum,Thomas H.; Gordon, legal representative,Connie L.; Glassman,Timothy E.; Pombrik,Sophia; Vaastra,Brian A.; Kirlin,Peter S.; Gordon, deceased,Douglas Cameron, Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition.
Baum, Thomas H.; Xu, Chongying; Hendrix, Bryan C.; Roeder, Jeffrey F., Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same.
Baum,Thomas H.; Xu,Chongying; Hendrix,Bryan C.; Roeder,Jeffrey F., Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.