Apparatus and method for surface modification using charged particle beams
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G21K-005/00
출원번호
US-0030768
(2011-02-18)
등록번호
US-8552406
(2013-10-08)
발명자
/ 주소
Phaneuf, Michael William
Lagarec, Ken Guillaume
Krechmer, Alexander
출원인 / 주소
Fibics Incorporated
대리인 / 주소
Chakrapani, Mukundan
인용정보
피인용 횟수 :
28인용 특허 :
5
초록▼
An apparatus and method for using high beam currents in FIB circuit edit operations, without the generation of electrostatic discharge events. An internal partial chamber is disposed over the circuit to be worked on by the FIB. The partial chamber has top and bottom apertures for allowing the ion be
An apparatus and method for using high beam currents in FIB circuit edit operations, without the generation of electrostatic discharge events. An internal partial chamber is disposed over the circuit to be worked on by the FIB. The partial chamber has top and bottom apertures for allowing the ion beam to pass through, and receives a gas through a gas delivery nozzle. A non-reactive gas, or a combination of a non-reactive gas and a reactive gas, is added to the FIB chamber via the partial chamber, until the chamber reaches a predetermined pressure. At the predetermined pressure, the gas pressure in the partial chamber will be much greater than that of the chamber, and will be sufficiently high such that the gas molecules will neutralize charging induced by the beam passing through the partial chamber.
대표청구항▼
1. A method for charge neutralization of a charged particle beam, comprising: a) maintaining a sample under an initial low pressure within a chamber;b) injecting a gas into the chamber directly onto a small portion of the sample creating a micro-environment on the small portion of the sample, the mi
1. A method for charge neutralization of a charged particle beam, comprising: a) maintaining a sample under an initial low pressure within a chamber;b) injecting a gas into the chamber directly onto a small portion of the sample creating a micro-environment on the small portion of the sample, the micro-environment having a gas concentration higher than elsewhere on the sample, while the sample outside the small portion is maintained closer to the initial low pressure; andc) passing the charged particle beam through the micro-environment and onto the small portion of the sample for promoting charge neutralization in the micro-environment. 2. The method for charge neutralization of claim 1, wherein the gas concentration of the micro-environment is sufficient for promoting charge neutralization in the micro-environment. 3. The method for charge neutralization of claim 2, further comprising monitoring the pressure of the chamber prior to passing the charged particle beam. 4. The method for charge neutralization of claim 2, further comprising monitoring charging events within the chamber; andadjusting the gas injection into the chamber for promoting charge neutralization in the micro-environment. 5. The method for charge neutralization of claim 4, wherein adjusting the gas injection into the chamber includes varying a gas flow rate, a gas flow pressure, a position of a nozzle delivering the gas, or a combination thereof. 6. The method for charge neutralization of claim 1, wherein the charged particle beam is an ion beam. 7. The method for charge neutralization of claim 1, wherein the gas includes a non-reactive gas. 8. The method for charge neutralization of claim 1, wherein the gas includes a mixture of a non-reactive gas and a reactive gas. 9. The method of charge neutralization of claim 8, wherein the non-reactive gas and the reactive gas are injected into the chamber using independent gas delivery tubes. 10. The method of charge neutralization of claim 8, wherein the non-reactive gas and the reactive gas are pre-mixed and injected into the chamber using a single gas delivery tube. 11. The method for charge neutralization of claim 1, wherein injecting the gas into the chamber comprises: delivering the gas through a gas nozzle, the gas nozzle including: a hollow body for receiving the gas,a frusto-conically shaped aperture extending through the hollow body for receiving the charged particle beam; anda gas outlet orifice concentric with the frusto-conically shaped aperture for delivering the gas from the hollow body to the small portion of the sample. 12. The method for charge neutralization of claim 11, wherein the gas outlet orifice delivers the gas at a high gas flux at the small portion of the sample while maintaining a reduced gas flux near the charged particle beam. 13. The method for charge neutralization of claim 12, wherein the frusto-conically shaped aperture is defined by a top opening having a first area and a bottom opening having a second area, the second area being smaller than the first area to provide a large escape angle for secondary charged particles ejected from a sample surface. 14. The method for charge neutralization of claim 11, wherein the frusto-conically shaped aperture is angled to allow at least two charged particle beams. 15. The method for charge neutralization of claim 11, wherein the hollow body is shaped to form a gas reservoir around the gas outlet orifice. 16. The method for charge neutralization of claim 1, further comprising: detecting secondary particles milled from a sample surface; andmonitoring progress in milling the sample. 17. The method for charge neutralization of claim 16, further comprising: introducing an electrostatic or an electromagnetic field to improve yield of the secondary particle detection. 18. The method for charge neutralization of claim 17, wherein the electrostatic or the electromagnetic field alters the speed and/or a trajectory of the secondary particles. 19. The method for charge neutralization of claim 18, further comprising: providing a heating or a cooling element to control a sample temperature during a gas assisted editing of the sample. 20. The method for charge neutralization of claim 19, wherein the sample temperature is controlled to optimize enhancement or retardation of the gas assisted editing of the sample.
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이 특허에 인용된 특허 (5)
Phaneuf, Michael William; Lagarec, Ken Guillaume; Krechmer, Alexander, Apparatus and method for surface modification using charged particle beams.
Zwart, Gerrit Townsend; Gall, Kenneth P.; Van der Laan, Jan; Rosenthal, Stanley; Busky, Michael; O'Neal, III, Charles D.; Franzen, Ken Yoshiki, Adjusting energy of a particle beam.
Zwart, Gerrit Townsend; Gall, Kenneth P.; Van der Laan, Jan; Rosenthal, Stanley; Busky, Michael; O'Neal, III, Charles D; Franzen, Ken Yoshiki, Adjusting energy of a particle beam.
Gall, Kenneth P.; Zwart, Gerrit Townsend; Van der Laan, Jan; Molzahn, Adam C.; O'Neal, III, Charles D.; Sobczynski, Thomas C.; Cooley, James, Controlling intensity of a particle beam.
Castagna, Marc; Chandler, Clive D.; Kurowski, Wayne; Phifer, Jr., Daniel Woodrow, Environmental scanning electron microscope (ESEM/SEM) gas injection apparatus with anode integrated with gas concentrating structure.
Zwart, Gerrit Townsend; Gall, Kenneth P.; Van der Laan, Jan; O'Neal, III, Charles D.; Franzen, Ken Yoshiki, Focusing a particle beam using magnetic field flutter.
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